New Transistors Products

Bipolar Transistors triple power dissipation .

MPPS(TM) Bipolar Transistors come in micro leaded packages. Size 3 x 2 mm package accommodates dual die and occupies same PCB area as single die SOT23 package, while 2 x 2 mm size supports single die and takes same space as SOT23 package. Off-board height of both packages is 0.9 mm, making them suitable for add-in card design and flat screen applications.

Transistor/Schottky Diodes feature 3 x 2 mm package.

Provided in miniature micro leaded package (MLP), Series of MOSFET/Schottky and Bipolar/Schottky combination products offer board space savings of 88% over alternative SM8 packaged products. One NPN and 3 PNP bipolar combination products are offered, featuring true 1 A DC rated, 40 V fast switching Schottky barrier diode. Bipolar transistor's on-state voltage is typically 140 mV at 1 A, and range...

MOSFETs meet requirements of linear applications.

APL502 and APL602 are 600 V linear MOSFETs that provide high power dissipation and high forward biased safe operating area (FBSOA). They are available in TO-265, T-MAX(TM), and ISOTOPÃ-® (SOT-227) packages. Military screening and hermetic packaging options are also available. Applications include electronic loads, linear regulators, and class A amplifiers.

IGBT Module is available in phase-leg topology.

MII 400-12E4 Dual Pack IGBT module has ratings of 420 A Ic @ Tc = 25Ã-

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This white paper provides a comprehensive guide to E-Mobility and E-Aviation.

Trench IGBT suits induction heating appliances.

FGL60N100D 1000 V trench Insulated Gate Bipolar Transistor (IGBT) provides sufficient voltage margins for both quasi-resonant- and single-ended topologies. Trench technology offers high-speed switching performance up to 50 KHz. Transistor includes built-in fast recovery diode. Conductance specifications include: Vce (sat) = 2.5 V @ Ic = 60 A.

MOSFETs have plastic encapsulated housing.

ISOPLUS 227 package is mechanically interchangeable with SOT-227B package. It uses direct-copper-bonded alumina substrate to reduce weight while maintaining same isolation voltage and thermal fatigue capability of latter package. Products range from IXFE180N10 176A/100V rated MOSFET to IXFE36N100 33A/1000V MOSFET, to buck and boost configured IXFE48N50QD2 and IXFE48N50QD3 units. Both of these...

IGBTs utilize metal on polysilicon gate structure.

POWER MOS 7(TM) 600 and 1200 V IGBTs are designed to replace 500/600 V and 1000/1200 V MOSFETs, respectively, in switch mode power supply, power factor correction, and other high-power applications. Units operate up to 150 kHz without current de-rating. IGBTs are available in two die sizes for 600 V and one die size for 1200 V, with and without anti-parallel diodes, in 10 die package combinations.

MOSFETs feature BGA packaging.

MOSFETs include single and common-drain dual devices in both N-channel and P-channel versions. They have breakdown voltage ratings from 20V to 30V, maximum RDS(on) ratings from 75 milliohms to 2.9 milliohms, and are gate-drive voltage specified, as low as 2.5V. Ball Grid Array (BGA) packaging reduces overall profile of circuit board with 0.76 mm maximum mounted height.

MOSFETs have high voltage depletion mode.

IXTP01N100D and IXTP02N50D MOSFETS are normally on at 0V gate bias and require negative gate bias to block current. IXTP01N100D is 1000V/100mA rated MOSFET with 110 ohm RDS(on) at VGS=0V, while IXTP02N50D is rated at 500V/200mA with RDS(on) of 30 ohms. Both devices are housed in TO-220 package allowing for high power dissipation. Applications include level shifters, current regulators, normally...

MOSFETs feature electrically isolated mounting.

IXUC100N055, IXUC200N055 and IXUC160N075 Trench Power MOSEFETs possess high current ratings of 100, 200 and 160 A, respectively. IXUC100N055 and the IXUC200N055 are rated at VDS (Drain Source Voltage) equal to 55V, while IXUC160N075 has VDS rating of 75V. All are housed in hole-less packages that conform to TO-220 outline. Frame is direct-copper-bonded alumina with 2500V isolation. Maximum...