Transistors

GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.
Transistors

GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.

Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power...

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Transistors

Gallium Nitride Transistor (600 V) comes in TO-247 package.

Offering 63 mΩ R(on) and 34 A ratings, TPH3205WS enables up to 3 kW high-efficiency inverter designs and titanium class power supplies without need to parallel transistors. Quiet Tab™ source-tab connection design reduces EMI at elevated dV/dt, which minimizes switching loss and enables high-speed operation in power supply and inverter applications. R(on) increase under switching is 5% at 400 V.

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TI Reveals Industry's First 80-V Half-bridge GaN FET Module
Transistors

TI Reveals Industry's First 80-V Half-bridge GaN FET Module

Fully integrated GaN FET power-stage prototype enables power designers to quickly realize the true benefits of GaN DALLAS -- Texas Instruments (TI) (NASDAQ: TXN) today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and two GaN FETs in a half-bridge configuration - all in...

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GaN Power Semiconductors simplify PCB design with topside cooling.
Transistors

GaN Power Semiconductors simplify PCB design with topside cooling.

With current ratings from 8–250 A, gallium nitride (GaN) power transistors feature GaNPX™ packaging and are based on Island Technology®. Die consist of islands and is embedded withinÂ- laminate construction. Series of galvanic processes replace conventional techniques, such as clips, wire bonds, and molding compounds. While packaged to be cooled via topside of chip...

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Transistors

ON Semiconductor and Transphorm Introduce 600 V GaN Transistors for Compact Power Supplies and Adapters

Reference design enables evaluation and implementation of new GaN-based transistors and AC/DC controllers required to take full advantage of the technical benefits of GaN devices Applied Power Electronics Conference (APEC) - Booth 407 - CHARLOTTE, NC -Â- ON Semiconductor (Nasdaq: ONNN), driving energy efficient innovations, and power conversion specialist Transphorm, building on their...

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MOSFET extends battery usage in ultraportable applications.
Transistors

MOSFET extends battery usage in ultraportable applications.

Offered in chipscale MICRO FOOT® package with 1 mmÂ-² footprint, Si8410DB TrenchFET® 20 V n-channel MOSFET is optimized for use as load switch, small-signal switch, and high-speed switch in power management applications. Device features low on-resistance of 37 mΩ at 4.5 V, 41 mΩ at 2.5 V, 47 mΩ at 1.8 V, and 68 mΩ at 1.5 V. With ratings down to 1.5 V and ±8 V VGS,...

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ON Semiconductor to Show Next Generation Power Systems in Action at APEC 2015
Transistors

ON Semiconductor to Show Next Generation Power Systems in Action at APEC 2015

LLC power supply, new developments in GaN, and motor drive control demonstrations, in addition to major involvement in the conference program Applied Power Electronics Conference (APEC) – Booth 407 – CHARLOTTE, NC – ON Semiconductor (Nasdaq: ONNN), driving energy efficient innovations, will be showcasing some of its latest advances in power management technology at APEC including a new LLC...

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Fixed Resistors

Vishay Intertechnology to Exhibit Industry-Leading MOSFETs, Passive Components, and Diodes at APEC 2015

MALVERN, Pa.Â- – Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2015, taking place March 15-19 in Charlotte, North Carolina. In booth 501, the company will be highlighting its latest industry-leading power MOSFET, passive component, and diode technologies for a wide range of applications....

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Vishay Intertechnology at APEC 2015 March 15-19, 2015 Charlotte, North Carolina Booth 501
Fixed Resistors

Vishay Intertechnology at APEC 2015 March 15-19, 2015 Charlotte, North Carolina Booth 501

At APEC 2015, Vishay Intertechnology will be highlighting its latest industry-leading power MOSFET, passive component, and diode technologies for a wide range of applications. New Products on Display at APEC 2015 New 40 V MOSFET in PowerPAK® 8x8L Offers Space- and Power-Saving, Totally Lead (Pb)-Free Replacement for DÂ-²PAK and DPAK Packages The Vishay Siliconix 40 V TrenchFET®...

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Rectifiers (Diodes)

Future Electronics Announces the IRGP08 Series with New Gen8 Trench Gate Technology from IR

Pointe Claire, QuebecÂ- – Future Electronics, a global leading distributor of electronic components, has announced immediate availability of the IRGP08 Series featuring the new Gen8 trench gate technology from International Rectifier. The IRGP08 Series of ultra fast soft recovery diodes boast IR's new Gen8 trench gate technology, and are now in stock with immediate shipping...

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Locon Sensors Withstand Extreme Temperatures
Sponsored

Locon Sensors Withstand Extreme Temperatures

Locon Sensor Systems offer robust sensor solutions for even the most severe environmental conditions. Their line of high-temp inductive sensors and their cylindrical photoelectric series can operate in temperatures up to 250 degrees Celsius. See our video to learn more.

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