Transistors

Wolfspeed to Present and Exhibit at GOMACTech 2016

Wolfspeed to Present and Exhibit at GOMACTech 2016

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting and presenting at the 2016 Government Microcircuit Applications and Critical Technology Conference (GOMACTech), the premier annual event dedicated to government-funded micro- and...

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IGBT Power Modules target TIG welding machines.

IGBT Power Modules target TIG welding machines.

Built on proprietary Trench PT IGBT technology, half-bridge Models VS-GP100TS60SFPbF, VS-GP300TD60S, and VS-GP400TD60S and single-switch Model VS-GP250SA60S provide extremely low collector-to-emitter voltages down to 1.10 V and turn-off switching energy down to 11 mJ for output inverter stages. RoHS-compliant modules feature operating frequencies to 1 kHz and continuous collector current from...

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Wolfspeed to Promote RF Foundry Services and Components at MILCOM 2015

Wolfspeed to Promote RF Foundry Services and Components at MILCOM 2015

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting at MILCOM 2015, which will take place October 26–28 in Tampa, Fla.-  Widely recognized as the premier international conference for military communications, MILCOM provides leading...

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Plastic GaN HEMTs support LTE and radar applications.

Plastic GaN HEMTs support LTE and radar applications.

Supplied in 4.5 x 6.5 mm plastic SMT packages, Models CGHV27060MP and CGHV35060MP are 50 V/60 W broadband GaN HEMTs fabricated on SiC substrate with 0.4 -µm process. Model- CGHV27060MP, supporting frequencies from UHF through 2.7 GHz, provides 16.5 dB gain, 70% drain efficiency, and 80 W output power at pulsed PSAT with 100 -µs pulse width and 10% duty cycle. Model CGHV35060MP operates from...

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Surface Mount Power MOSFETs feature Kelvin connections.

Surface Mount Power MOSFETs feature Kelvin connections.

Supplied in surface mount PowerPAK® 8 x 8 package, 600 V Models SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E feature large drain terminal for low thermal resistance and Kelvin source connection that can increase efficiency by optimizing gate drive signal. Devices offer low on-resistance down to 0.135 Ω at 10 V and ultra-low gate charge down to 31 nC. RoHS-compliant and halogen-free,...

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Wolfspeed, A Cree Company, to Promote Proven, Reliable GaN HEMTs at EuMW 2015

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at European Microwave Week (EuMW) 2015, which will take place September 6–11, 2015 in Paris. Exhibiting at Booth #240, Chris Harris, European business development manager at Wolfspeed, and Tom Dekker, director of...

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GaN Systems Showcases High Current 650V, 100A Gallium Nitride Power Transistors for First Time at Energy Conversion Congress and Expo

Sampling now with major solar, industrial and automotive customers worldwide; new customer applications on display OTTAWA, Ontario,- – GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, is displaying its GS66540C 650V 100A high current GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE...

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Integrated Power Module outputs 75-229 KW.

Operating on DC bus voltages from 400–800 Vdc and switching frequencies up to 20 kHz, Powerex Integrated Power Module can be mounted on various heatsinks, including both forced air and liquid cooled options, dependent upon application requirements. Unit is compatible with NX-Series of Mitsubishi IGBT devices and is suited for energy storage, uninterruptable power supplies, motor drives, solar,...

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Low-Resistance GaN Transistor reduces losses with step function.

Low-Resistance GaN Transistor reduces losses with step function.

Offered in power conversion switch, 650 V blocking voltage transistor is based on design for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). This 650 V, 50 A GaN transistor achieves 12 Ω Rdson and accelerates extension of GaN-based technology from communications subsystems into power conversion subsystems.

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