Transistors

DMOS FET Arrays feature 1.5 A sink-output driver.
Transistors

DMOS FET Arrays feature 1.5 A sink-output driver.

Respectively differingÂ- for their use of active high or low control logic, TBD62064A and TBD62308A series offer 4 channels of 50 V/1.5 A output. Four channels can also be paralleled to increase current driving capability. Manufactured using 130 nm BiCD process technology, products offer control inputs up to 25 V and feature 4 common cathode clamp diodes. Available packages...

Read More »
IGBTs suit high power switching systems.
Transistors

IGBTs suit high power switching systems.

Utilizing proprietary Ultra Field Stop trench technology, Model NGTB40N120FL3WG has Ets of 2.7 mJ, while Model NGTB25N120FL3WG has Ets of 1.7 mJ. Both devices feature VCEsat of 1.7 V at their respective rated currents. Model NGTB40N120L3WG, optimized for low conduction losses, has VCEsat of 1.55 V, at rated current, with Ets of 3 mJ. All RoHS-compliant 1,200 V products are co-packaged with fast...

Read More »
GaN HEMT Die (28 V, 30 W) supports up to 8 GHz operation.
Transistors

GaN HEMT Die (28 V, 30 W) supports up to 8 GHz operation.

As 28 V, 30 W GaN HEMT (high electron mobility transistor) bare die, CGH80030DÂ- exhibits 12 dB typ small signal gain at 8 GHz, 17 dB typ small signal gain at 4 GHz, and 30 W typ PSAT. Suitable applications include UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular...

Read More »
Transistors

Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)Â- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...

Read More »
DC to AC Power Supplies (Inverters)

Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales

New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...

Read More »
Transistors

Wolfspeed Has Shipped GaN RF Devices Surpassing 1.3 Gigawatts Output Power While Achieving Industry-Leading Reliability

Durham, N.C. - Wolfspeed, A Cree Company, announced that as of the end of 2015, it shipped GaN-on-SiC RF power transistors with a combined RF output power of more than 1.3 gigawatts. Wolfspeed achieved this milestone while maintaining a failure-in-time rate (FIT rate) of 5-per-billion device hours, illustrating the industry-leading reliability and performance of Wolfspeed’s GaN-on-SiC devices....

Read More »
Wolfspeed to Present and Exhibit at GOMACTech 2016
Transistors

Wolfspeed to Present and Exhibit at GOMACTech 2016

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting and presenting at the 2016 Government Microcircuit Applications and Critical Technology Conference (GOMACTech), the premier annual event dedicated to government-funded micro- and...

Read More »
IGBT Power Modules target TIG welding machines.
AC to DC Power Supplies

IGBT Power Modules target TIG welding machines.

Built on proprietary Trench PT IGBT technology, half-bridge Models VS-GP100TS60SFPbF, VS-GP300TD60S, and VS-GP400TD60S and single-switch Model VS-GP250SA60S provide extremely low collector-to-emitter voltages down to 1.10 V and turn-off switching energy down to 11 mJ for output inverter stages. RoHS-compliant modules feature operating frequencies to 1 kHz and continuous collector current from...

Read More »
Wolfspeed to Promote RF Foundry Services and Components at MILCOM 2015
Electronic Amplifiers

Wolfspeed to Promote RF Foundry Services and Components at MILCOM 2015

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting at MILCOM 2015, which will take place October 26–28 in Tampa, Fla.Â-  Widely recognized as the premier international conference for military communications, MILCOM provides leading...

Read More »
Plastic GaN HEMTs support LTE and radar applications.
Transistors

Plastic GaN HEMTs support LTE and radar applications.

Supplied in 4.5 x 6.5 mm plastic SMT packages, Models CGHV27060MP and CGHV35060MP are 50 V/60 W broadband GaN HEMTs fabricated on SiC substrate with 0.4 Â-µm process. Model CGHV27060MP, supporting frequencies from UHF through 2.7 GHz, provides 16.5 dB gain, 70% drain efficiency, and 80 W output power at pulsed PSAT with 100 µs pulse width and 10% duty cycle. Model CGHV35060MP...

Read More »

All Topics