New Transistors Products

MOSFETs address high-voltage, fast-switching applications.

With maximum gate-to-source voltage rated at Ã-

Power GaAs MESFET achieves drain efficiency over 55%.

Suited for wireless communications, KGF1934 power gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) achieves max drain efficiency with output power of 10 W at compression point of 1 db. Device also marks 25% in drain efficiency at normal operating output power level of 2 W. Specific applications include transmitter power amplifiers for W-CDMA and CDMA2000 wireless base...

Power MOSFETs boost output current in DC/DC converters.

Comprised of RJK0305DPB high-side device and RJK0301DPB low-side device, power MOSFET chip set can achieve up to 90% accuracy in DC-DC converter with 12 V input and 1.3 V/20 A output. Product components, manufactured in LFPAK (Loss-Free Package), exhibit power loss of 2.9 W. They are suited for DC-DC converters that change 12 or 19 V input into 0.8-2.5 V output typically used by circuits in...

Transistors and Diodes are used in portable applications.

Digital transistors, bipolar transistors, small signal Schottkys, and small signal switching diodes are manufactured in SOT-723 flat-lead package, which measures 1.2 x 1.2 x 0.5 mm. Utilizing 1.44 mmÃ-² PCB area, discrete devices include 50 signal transistors and signal diodes suited for use in cell phones, PDAs, digital still cameras, and notebook computers.

Ergonomics Is Good Economics

While you don't need an MD to know that ergonomic designs are good for physical health, you probably didn't realize that these designs can actually be good for your economic health too.

IGBTs feature strip layout for operation up to 50 kHz.

PowerMESH STGP20NC60V and STGW20NC60V are 30 A, 600 V n-channel IGBTs offered in TO-220 or TO-247 packages, respectively. Optimized Crss/Ciss ratio avoids cross-conduction phenomena and low gate charge. Equivalent Model STGW20NC60VD comes in TO-247 package with co-packaged freewheeling diode. Rated 50 A, 600 V, Model STGW40NC60V comes in TO-247 package. All offer 150Ã-

IGBTs target TIG welder applications.

Models APT200GN60J and APT200GN60JDQ4 insulated gate bipolar transistors use Field Stop Trench Gate Technology and are offered in industry standard SOT-227 package. Units operate up to 30 kHz hard-switched and are 10 Ã-µs short circuit rated. In addition to being used in output inverter of aluminum TIG welders, devices can be used in any application requiring low conduction losses at high...

Depletion-Mode MOSFET features 700 V breakdown voltage.

With 42 ohm max on-resistance, DN2470 N-channel MOSFET minimizes power dissipation as well as voltage drops and is free from thermal runaway and thermally induced secondary breakdown. Depletion-mode allows construction of normally on solid-state relays and 2 terminal constant current sources. Breakdown voltage provides protection against high-voltage transients in NC solid-state relays, SMPS...

MOSFET features 7.5 nC Miller charge.

Model FDS3572 is an 80 V N-channel MOSFET in SO-8 packaging for fast switching. It features low RDS(on) of 16 milliohms, total gate charge of 31 nC at VGS=10 V, and QRR of 70 nC for low reverse recovery losses. Unit is suited for pre-regulated, full- or half-bridge dc/dc converter circuit applications. Device can also be used as synchronous rectifier to replace higher voltage Schottky rectifiers...

Hybrid Transistor suits PFC and high-power applications.

Supplied in screw-mounted ISOTOP package, 4-terminal STE50DE100 hybrid emitter-switched bipolar transistor sustains collector-source voltage of 1,000 V and collector currents up to 50 A. Power dissipation is 160 W at 25˚C and max operating junction temperature is 150˚C. Due to cascode configuration and dedicated bipolar technology, device offers square reverse bias safe operating area, enabling...

Power Modules feature 12 mm profile.

Suited for low power applications, Power Modules in SP3 package offer minimum parasitic inductance, solderable pins for mounting to PCB, and base plate for thermal resistance. Current ratings range from 11-54 A at Tc=80Ã-

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