New Transistors Products

IGBT Modules minimize power loss in industrial applications.

With optimized on-state loss (VCE(sat)) versus turn-off switching loss (Eoff), 50 A Model FMG2G50US120 and 75 A Model FMG2G75US120 feature full, 10 Ã-µsec short-circuit withstand time and square reverse biased safe operating area. Model FMG2G75US120 provides max variation of 0.1 V from 25-125Ã-

Boost/Buck Chopper Circuits feature SOT-227 package.

COOLMOS(TM) and IGBT Transistors use MOSFETs in plastic SOT-227 package, which provides 2,500 V isolation and screw-on terminals, allowing assembly onto PC board and heatsink. High-voltage transistors combined with fast recovery diodes offer solution to applications requiring high current and high switching frequency up to 200 kHz. Applications include power factor correction converters, DC motor...

Power Modules suit high voltage, zero current switching.

Rated 1,000 and 1,200 V, MOSFET Modules are offered in single switch configuration with currents from 86-160 A and phase leg configuration with currents of 37-49 A. Modules are integrated in SP6 package, which exhibits minimum internal parasitic resistance and inductance. Power devices allow operating in ZCS mode in range of 100-200 kHz for Power MOS 7Ã-® PT IGBTs and Fast NPT IGBTs, and...

MOSFET Modules feature current ratings from 13-160 A.

Offered in low profile SP4 and SP6 packages, PowerMOS 7Ã-® 1000 and 1200 V MOSFETs and FREDFETs allow operating in hard switching mode in range of 100-200 kHz. They are offered in single switch, Buck, Boost, Dual common source, phase leg, and full bridge configurations. Applications include power factor correction, motor control, UPS, and power supplies operating from 400 Vac mains and above.

Reducing Risk Through On-Demand Manufacturing

Check out this white paper to learn how putting manufacturing safeguards in place stimulates growth and reduces risk in your supply chain.

Transistors use gold topside metallization and gold wires.

L-Band, Long Pulse Model 1214-32L is rated with input power of 5.3 W to provide minimum power output of 32 W over 1.2-1.4 GHz band. Model 1214-150L is rated with input power of 27 W to provide minimum output of 150 W over same frequency range. Units are suited for full range of L-Band radar applications.

Discrete IGBTs replace 200-300 V MOSFETs.

Offered in TO-220, TO-247, D2, and D3 packages, 300 V IGBTs use Power MOS 7Ã-® Technology and are designed to replace 200-300 V MOSFETs in switching applications to 200 kHz. Also suited for plasma display panel applications, products offer IC2 values of 26, 32, 60, and 83 A depending on model. Additional applications include DC-DC converters for Telecom, DC-AC inverters for alternate energy...

Bipolar Transistor suits induction heating applications.

Model FGL60N100BNTD is a 1,000 V/60 A Insulated Gate Bipolar Transistor that combines trench technology and non-punch through technology. It offers switching speeds of 130 ns and low saturation voltage of 2.5 V at 60 A. Avalanche immunity protects unit from field failure caused by break down avalanche during off-state. Available in TO-264 package, lead-free transistor meets or exceeds...

MOSFETs suit automotive applications.

PowerTrenchÃ-® N-Channel, 30 V MOSFETs, Models FDD044AN03L, FDU044AN03L, FDD068AN03L, and FDU068AN03L are offered in D-PAK and I-PAK packaging for surface or through-hole mount designs. At 3.9 mOhms max, Models FDD044AN03L and FDU044AN03L offer lowest RDS(on) at 30 V available in TO-252 and TO-251 packages, respectively. All four are qualified to AEC-Q101 standard. Applications include motor...

N-Channel MOSFET suits high-current DC/DC converters.

Model STD150NH02L will support drain to source voltage of 24 V and max drain current of 150 A. At these ratings, on-resistance is 0.0035 Ohm. At 10 V, typical RDS(on) is 0.003 Ohm and at 5 V it is 0.005 Ohm. Low gate charge helps reduce switching losses, and low thermal resistance facilitates current handling. MOSFET is manufactured using 0.6 Ã-µm process, which utilizes metallization and...

Insulated Gate Bipolar Transistors suit UPS applications.

Rated from 16-60 A as discrete IGBTs or co-packs with internal fast recovery diode, C2-Class IGBTs have negative temperature dependence on saturation voltage. They are suited for off-line power conversion applications requiring 600 V devices with switching frequencies up to 200 kHz. Packaging options include TO-220, surface-mountable TO-263 and TO-268, TO-247, and PLUS247. Products are also...

TPA Motion Introduces New Curved Linear Rail Guides: the CR40 Series

For the ultimate in precision open and closed loop guided motion systems, TPA Motion is the leader in curved rail, liner guides. We specialize in engineering excellence, with products that exhibit an elevated level of precision, delivering robust performance, even under the most challenging conditions. See our video to learn more.