Transistors

Richardson RFPD Introduces Lineup of Power IGBTs in New VINco E3 Package from Vincotech
Transistors

Richardson RFPD Introduces Lineup of Power IGBTs in New VINco E3 Package from Vincotech

Low-profile package for motion control, solar and UPS applications March 28, 2017 – Geneva, Ill.: Richardson RFPD, Inc. announced today the availability from stock and full design support capabilities for a family of power IGBTs in the new VINco E3 package from Vincotech. The VINco E3 package features SLC (SoLid Cover) technology in an industry-standard lowprofile package. It enables engineers...

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EMI / RFI Filters

Richardson RFPD at APEC 2017

March 7, 2017 – Geneva, Ill.: Richardson RFPD, Inc. today announces its attendance and participation at the 2017 Applied Power Electronics Conference and Exposition (APEC). The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, including manufacturers,...

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GaN RF Transistor are CW and pulse capable.
Transistors

GaN RF Transistor are CW and pulse capable.

Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.

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C3M0065100K MOSFETS provide notch between drain and source pins.
Transistors

C3M0065100K MOSFETS provide notch between drain and source pins.

With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at...

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Transistors

N-channel MOSFETs for electric power switching applications.

Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.

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GaN on SiC HEMTs suit aerospace and defense applications.
Transistors

GaN on SiC HEMTs suit aerospace and defense applications.

Housed in 5 x 6 mm SMT package, 15 W, 50 Ω-matched Qorvo QPD1000 operates from 30 MHz to 1.215 GHz, suitable for handheld radios, radar, and jammer systems. Internally matched, 500 W QPD1003 operates from 1.2–1.4 GHz and 50 V supply rail. Device is suited for military and civilian L-band radar applications. Supplied in air cavity packages, 125 W QPD1008L and 65 W QPD1015L are wideband...

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Transistors

Vishay Intertechnology at Electronica 2016 Nov. 8-11 Munich, Germany Hall A5 Booth 141-142, Hall A6 Booth A11-A13

At electronica 2016, Vishay Intertechnology will be highlighting its latest industry-leading passive component, power MOSFET, IC, diode, and optoelectronics technologies for a wide range of applications. New Products on Display at electronica 2016 vPolyTan™ Multi-Anode Solid Tantalum Chip Capacitors Increase Volumetric Efficiency to Lower Component Counts Combining polymer tantalum technology...

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How SpinSelect Can Save You Time and Money
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How SpinSelect Can Save You Time and Money

Thanks to the unique SpinSelect™ Multi-Pocket selectable quick change tool holder, it's time to rethink the range, complexity and volume of parts that your lathe can produce. Our Spin-Select™ tool was created to increase productivity and consistency by decreasing downtime associated with lathe cutting tool and insert setups or changeovers. This product is a game-changer for the industry and we're pleased to show you why.

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