Transistors

Vishay Intertechnology's SQJQ480E Automotive Grade Power MOSFET Honored in Electronic Products China Magazine's 2017 Top-10 Power Product Awards
Transistors

Vishay Intertechnology's SQJQ480E Automotive Grade Power MOSFET Honored in Electronic Products China Magazine's 2017 Top-10 Power Product Awards

MALVERN, Pa. - Oct. 10, 2017 - Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Vishay Siliconix SQJQ480E 80 V Automotive Grade TrenchFET® n-channel power MOSFET has been named by Electronic Products China magazine and 21IC as a winner in the 15th Annual Top-10 Power Product Awards. The AEC-Q101 qualified device was honored with the Green Energy Award in recognition of its high...

Read More »
RF Power LDMOS Transistors come with NXP product longevity program.
Transistors

RF Power LDMOS Transistors come with NXP product longevity program.

Suitable for VHF TV broadcast, sub-GHz aerospace, mobile radio and high-VSWR ISM applications, MRFX1K80H RF Power LDMOS Transistors are operated in 30 V to 65 V with 1.8 to 400 MHz frequency range. Units deliver 1800 W CW at 65 V and can handle VSWR of up to 65:1. Transistors feature ESD protection, unmatched input and output design. Offered in air cavity ceramic package, units can be used...

Read More »
C3M0075120J SiC MOSFET offers an output capacitance of 51 nC.
Transistors

C3M0075120J SiC MOSFET offers an output capacitance of 51 nC.

C3M0075120J silicon carbide power MOSFETs are available in seven-lead TO-263-7 surface mount package. Units come with 7 mm creepage distance between drain and source with drain source voltage (Vds max) of 1200 V. Featuring reverse recovery charge and reverse recovery time of 220 nC and 18 ns respectively, units provide a maximum junction temperature of 150°C. These MOSFETs can be used in EV...

Read More »
20V MOSFETs are housed in SOT-23F packages.
Transistors

20V MOSFETs are housed in SOT-23F packages.

20V MOSFETs are available in SSM3K344R, SSM3K345R, SSM3J355R and SSM3J358R models. Unit is suitable for PCs, laptops and tablets applications and helps to consume low power. Product uses low voltage trench structure process and offers power dissipation rate of 1.0 W. Providing FET switch functionality for power rails up to 40V, MOSFET’s process reduces gate switch charges and on-state...

Read More »
SiC Power MOSFETs are housed in TO-263-7L surface mount package.
Transistors

SiC Power MOSFETs are housed in TO-263-7L surface mount package.

Available in C3M0065100J (65 mΩ) and C3M0120100J (120 mΩ) configurations with output capacitance of 60 pF and 40 pF respectively, Silicon Carbide Power MOSFETs are suitable for renewable energy, EV battery charging, HV DC/DC converters, and switch mode power supplies applications. Featuring C3M™ technology and N-channel enhancement mode, units offer reverse recovery time of 14 ns...

Read More »
RF Power GaN Transistor is housed in NI-360H-2SB ceramic flanged package.
Transistors

RF Power GaN Transistor is housed in NI-360H-2SB ceramic flanged package.

Operating from 1 MHz to 2700 MHz frequency with +50 Vdc voltage, AFG24S100HR5 RF Power GaN Transistor is suitable for CW, pulse and wideband RF applications such as public mobile radios, ISM and wireless cellular infrastructure. Delivering gain of 16.0 dB CW, 18.0 dB pulse with 64.2% CW, 66.8% pulse efficiency in 2500 MHz narrowband test circuit, unit offers thermal resistance of 0.86ºC/W and...

Read More »
Gate Drivers and NexFET™ Power Blocks deliver 700 W of power.
Transistors

Gate Drivers and NexFET™ Power Blocks deliver 700 W of power.

Requiring 511 mm² board space, DRV832x brushless DC gate drivers and NexFET™ Power Blocks are capable of driving peak current of 160 A. Enabling shorter trace length, units come with 18-volt BLDC motor design. Featuring smart gate-drive architecture, gate drivers adjust field-effect transistor switching to optimize power loss. Available in CSD88584Q5DC and CSD88599Q5DC models, power blocks...

Read More »
Transistors

N-Channel Power MOSFETs provide low switching noise.

Suitable for power supplies, motor drives, DC-DC and AC-DC converters applications, 40V/45V N-Channel Power MOSFETs with optimized cell structures suppresses spike voltage and ringing during switching. Unit uses U-MOS IX-H low-voltage trench structure for improved switching. Featuring low on-resistance and output charge, MOSFETs support 4.5V logic level drive.

Read More »
C3M0075120K SiC Power MOSFET provides 58 pF output capacitance.
Transistors

C3M0075120K SiC Power MOSFET provides 58 pF output capacitance.

Housed in four-lead TO-247-4 package with separate driver source pin, C3M0075120K C3M™ SiC Power MOSFET features 8 mm creepage distance between drain and source. Offering continuous drain current of 30.8 A and 1200 V drain source voltage, unit comes with 220 nC reverse-recovery charge and 18 ns reverse-recovery time. MOSFET provides 75 mΩ and 51 nC of Rds (on) total gate charge (Qg)...

Read More »
Locon Sensors Withstand Extreme Temperatures
Sponsored

Locon Sensors Withstand Extreme Temperatures

Locon Sensor Systems offer robust sensor solutions for even the most severe environmental conditions. Their line of high-temp inductive sensors and their cylindrical photoelectric series can operate in temperatures up to 250 degrees Celsius. See our video to learn more.

Read More »

All Topics

COVID-19 Response Suppliers COVID-19 Response:
Can Your Company Help Provide Critical Supplies?

We are using the power of our platform to aid in the mass shortage of critical supplies. If your company can help provide supplies, capabilities, or materials for products such as N-95 Masks and Tyvek SuitsPlease let us know.

COVID-19 Response Suppliers