New Transistors Products

Fairchild Semiconductor to Deliver Solutions for Optimizing System Power in Automotive Applications at Convergence 2006

South Portland, Maine--September 19, 2006--Fairchild Semiconductor (NYSE: FCS), the leading global supplier of products that optimize system power, will demonstrate its leadership position in ignition system products and other solutions for automotive applications at Convergence 2006, being held in Detroit, Michigan, October 16-18. Fairchild's conference exhibit will emphasize its continued...

EMCORE Corporation, Group4 Labs, and Air Force Research Laboratory Announce World's First GaN-on-Diamond Transistor

SOMERSET, N.J., Aug. 1 // -- EMCORE Corporation (NASDAQ:EMKR), a leading provider of compound semiconductor-based components and subsystems for the broadband, fiber optic, satellite, solar power and wireless communications markets, today announced that a team including EMCORE, Group4 Labs and Engineers at the U.S. Air Force Research Labs (AFRL) have demonstrated the world's first successful...

LDMOS Transistor is suited for RF power applications.

Available in RoHS/WEEE-compliant ceramic flanged package, SLD-3091FZ Laterally Diffused Metal Oxide Semiconductor (LDMOS) 30 W transistor promotes design versatility and performance over 10-1,600 MHz range. It is fabricated in XeMOS II(TM) semiconductor process technology and, at 30 W output power (915 MHz), delivers 18 dB gain, 45% drain efficiency, and 28 dBc third order intermodulation...

LDMOS Transistor features thermally efficient packaging.

Housed in RoHS/WEEE compliant plastic encapsulated surface mount package, SLD-1026Z Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor offers performance from 10-2,700 MHz. Transistor operates from 28 V, 50 mA current, and provides 19 dB gain, 35% drain efficiency, and -28 dBc 3rd order intermodulation products at 3 W output power. Product is suited for driver and power amplifiers in...

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High-Power Transistors suits cellular/UMTS applications.

Gallium Nitride High Electron Mobility Transistors show peak drain efficiency up to 67% at UMTS and up to 60% at WiMAX frequency bands. Suited for UMTS or 3G base station segment, products achieve gain of 16 dB, power density up to 4 W/mm at 28 V, and 1,000 hr high-temperature reliability. There are 4 models for wireless cellular market that carry ratings from 8-120 W. For WiMAX base stations,...

Infrared Detectors incorporate infrared transmissive lens.

Housed in miniature, surface mount package measuring 0.10 x 0.08 in., Series OP570 NPN Phototransistors provide collector-emitter breakdown voltages of 30 V, collector current of 20 mA, and power dissipation of 130 mW. On-state collector current is 2.5 mA min and collector-emitter dark current is 100 nA max. Operating from -25 to +85Ã-

RF Power MOSFET operates at dc voltages up to 165 V.

Housed in flangeless T3 package, Model ARF475FL uses 2 die configured for push-pull operation and is capable of 1,000 W pulsed output and 300 CW at up to 150 MHz. To obtain high power dissipation, backside of package is lapped to mate with system heat sink. Coplanar lead arrangement facilitates circuit layout and provides over 2,500 V isolation between any terminal and mounting surface....

NEC & NEC Electronics Succeed in Development of Breakthrough Device Technology Capable of Enhancing Functionality of Sub-10nm Transistors

TOKYO, Dec. 6 / -- NEC Corporation (NASDAQ:NIPNY) and NEC Electronics Corporation today announced the joint development of new breakthrough device technology for low-power, high performance system LSI. Based on the ultimate scaling of conventional bulk planar MOSFETs, the new technology is capable of improving on-off ratio, enhancing the functionality of sub-10nm planar bulk transistors. The new...

Automotive Power MOSFET offers typ RDS(on) of 5 milliohms.

Offered in DPAK and TO-220 packages, STD95N04 employs STripFET(TM) technology, which enables max RDS(on) of 6.5 milliohm and maintains standard threshold drive requirement. Product, compliant with AEC Q101 Stress Test qualification for discrete semiconductors, has max operating temperature of 175Ã-

Transistors target high L-band pulsed radar applications.

Housed in hermetic metal package, High L-Band Series consists of Model types 1517-20M, 1517-110M, and 1517-250M, which cover frequency from 1,480-1,650 MHz with pulsed output power of 20, 110, and 250 W respectively. Transistors handle medium pulse widths of 200 Ã-µs with duty cycle of 10%. Model 1517-250M features 7.0 dB gain with 0.5 dB droop or less, and rise time of 150 ns.

Precision Machining Solutions with Over 25 Years of Experience

Quality, customer service, and unbeatable value are the hallmarks of Hogge Precision. Since 1989 we have built a reputation as the go-to precision machining source, servicing many demanding industries. For CNC machining and screw machining, there are few manufacturers that can match our capabilities and expertise. See our video to learn more.