New Transistors Products

Bipolar Transistor targets 1,030 MHz avionics applications.

Suited to operate in IFF/TACAN or similar short pulse formats, M/A-COM MAPRST1030-1KS features minimum gain of 8.0 dB with 45% minimum collector efficiency on 50 Vdc supply. Class C unit is rated for 1,000 W peak and housed in hermetic, ceramic/metal package that can tolerate 10:1 load mismatch without damage or loss in performance.

Display Modules are readable in high ambient light.

Model NL2432HC17-04B 2.7 in. transreflective display module features reflective ratio of 35% and brightness level of 100 cd/mÃ-² in transmissive mode. With contrast ratios of 150:1 in transmissive mode and 15:1 in reflective mode, NL2432HC22-41B 3.5 in. display has luminence level of 200 cd/mÃ-² and reflective ratio of 15%. Both amorphous silicon TFT LCD modules have mode for using...

Power MOSFET is suited for lighting applications.

Offered in DPAK/IPAK and TO-220FP packages, STD11NM60N reduces conduction losses and optimizes efficiency of lighting applications by achieving RDS ON-resistance of 450 mOhm, max. Diode dv/dt capability and avalanche performance allow users to keep operating temperatures within typical working range. Built on MDmesh(TM) technology, 600 V device features energy-optimized driver circuit that...

P-Channel MOSFET optimizes low-voltage power management.

Measuring 1.0 x 1.5 x 0.65 mm, FDZ191P PowerTrenchÃ-® MOSFET is capable of operating down to 1.5 V and meets all green and RoHS standards. Wafer-level chip scale package enables thermal resistance of 83Ã-

Metal Stamping for Construction Tool Applications

Metal stamping is a highly versatile manufacturing technique, capable of producing quality components at tight tolerances.

UltraFET Devices offer thermal resistance.

Housed in 3 x 3 mm, molded leadless packages, N-Channel UltraFET devices come in 100, 200, and 220 V models. They are suited for primary-side switches in isolated dc/dc converter applications, such as workstations, telecom, and networking equipment. Rated at 200 V, Model FDMC2610 features Miller charge of 3.6 nC and on-resistance of 200 mW. All units are Pb-free and meet or exceed requirements of...

Bipolar Transistors are offered in multiple package options.

Designed for low voltage, high-speed switching applications, Low Vce (sat) bipolar junction transistors (BJTs) come in WDFN6, WDFN3, SOT-23, SOT-563, and ChipFET packages. Surface mount devices feature saturation voltage of 45 mV at 1 A and high current gain. Suited for variety of portable applications, transistors offer electrostatic discharge tolerance of more than 8,000 V and are...

GaN HEMTs extend reach of broadband systems.

Respectively rated at 10 and 45 W, CGH40010 and CGH40045 are general-purpose high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) that can be used to optimize efficiency of various broadband applications. They operate at up to 4 GHz with 14 dB of associated power gain and 65% drain efficiency at 28 V. Efficiency, gain, and bandwidth attributes make them suitable components...

Transistors suit general-purpose broadband systems.

Designed for linear and compressed amplifier circuits, 10 W CGH40010 and 45 W CGH40045 high-power gallium nitride (GaN) high electron mobility transistors (HEMTs) suit applications in general-purpose broadband amplifiers and critical communications systems used by police, fire departments, and homeland security. They operate at up to 4 GHz with 14 dB of associated power gain and 65% drain...

Fujitsu to Feature World-class 65-Nanometer Process Technology for Advanced Networking, Mobile Applications at 12th Annual FSA Conference

CS200HP/200A, Part of Fujitsu's Turnkey Services for Customers, at Booth #410 SAN JOSE, Calif., 2006 FSA Suppliers Expo, Oct. 10 // -- Fujitsu Microelectronics America, Inc. (FMA), a leader in advanced technology, will feature its 65-nanometer process technology at the 2006 Fabless Semiconductor Association Suppliers Expo and Conference in San Jose, October 11. Fujitsu will be at booth 410. By...

GaN HEMT is intended for WiMAX applications.

Model CGH27015 15 W packaged gallium nitride high electron mobility transistor (GaN HEMT) produces 2.5 W of average output power and 24% drain efficiency over frequency range of 2.3-2.9 GHz. Device features 14.5 dB of small signal gain, and 2% error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 V.

Fresh Air Intake Designed to Meet ASHRAE 62.2 standards

Alan Manufacturing has a long history of developing innovative solutions for HVAC applications. With over 1,000 product designs under our belt, we have gained a reputation as the go-to source for HVAC dampers, hardware, duct supports, zone control systems, and much more. Adding to this extensive list of achievements we now announce the release of our new line of Fresh Air Intake products. Designed to meet ASHRAE 62.2 standards, they are the most robust and high-performance product of their kind. See our video to learn more.