New Transistors Products

Power Transistors (30 V) are optimized for power density.

Able to achieve 1.6 mW (typ) RDS(ON) in 5 x 6 mm PowerFLAT(TM) package, STL150N3LLH6 utilizes STripFET(TM) VI DeepGATE(TM) technology and increases energy efficiency for power converters in products such as computers and telecom/networking equipment. Gate charge lets engineers use higher switching frequencies and specify smaller passive components, such as inductors and capacitors. Another SMT...

Gate Drivers control power semiconductor applications.

Incorporating isolated power supplies and protection features required for safe operation of power stages, IGBT and SCR Gate Drivers include isolated analog feedback of critical power stage parameters, DC bus voltage, output current, and device temperature. IGBT gate drivers control 2-6 IGBTs at currents in excess of 1,400 A, while SCR gate drivers control up to 12 SCRs, making them suited for ac...

Vishay's TrenchFET-® Gen III Family of Power MOSFETs Selected as Finalist in EDN's 19th Annual Innovation Awards

MALVERN, PENNSYLVANIA - February 12, 2009 - Vishay Intertechnology, Inc. today announced that its TrenchFET-® Gen III family of power MOSFETs was selected from hundreds of nominations to be a finalist for this year's EDN Innovation Awards in the Power Semiconductors category. Instituted in 1990, EDN magazine's Innovation Awards honor the people, products, and technologies that have shaped the...

Microwave Transistors target telecommunications applications.

Designed for 1,800-2,300 MHz frequency range, CGH21120F transistors provide over 110 W peak CW power at 70% efficiency, with gain of 16 dB at 28 V. Model CGH25120F is optimized for 2,300 - 2,700 MHz range. Both single, input-prematched GaN HEMT transistors can be used for DCS; PCS, both GSM and CDMA; W-CDMA; and LTE, providing more than 120 W saturated power. With high degree of digital...

Quick Release & Spring Loaded Pins - Fast, Convenient and Secure

To learn more about the different types of pins available or which ones to select for your specific application, download our product guide.

TrenchFET-® Power MOSFET features backside insulation.

Supplied in chipscale MICRO FOOTÃ-® package, Si8422DB has 2-mil backside coating that insulates top of 1.55 x 1.55 x 0.64 mm package to electrical shorts created by temporary contact with moving parts in applications with thin height requirements. This 20 V, n-channel MOSFET can be placed where other items may be directly above it and is optimized for power amplifier, battery, and load...

Toshiba Adds Family of High-Voltage Power Mosfets Using Advanced π-MOS Vii Process Technology for AC/DC and Ballast Applications

500V and 600V MOSFETs Combine Advanced Process Technology with Optimized Planar Cell Structure to Increase Power Density and Efficiency IRVINE, Calif., January 20, 2009 - Toshiba America Electronic Components, Inc. (TAEC)* today introduced a new series of high-voltage Ã-

RF Power Transistor suits commercial aerospace applications.

Optimized for HF to UHF communications, 50 V Model MRF6V4300N meets requirements of radar, avionics, and air traffic management systems. Unit delivers RF output power of 300 W CW from 10-600 MHz, and at 450 MHz, device has gain of 22 dB and 60% efficiency. Housed in RoHS-compliant, over-molded plastic package, LDMOS RF power transistor features low thermal resistance of 0.24Ã-

Low VCE(SAT) Dual Transistors come in 3 x 2 mm package.

Low VCE(SAT) transistors are packaged in TLM832D(TM) Tiny Leadless Module, which has power dissipation of 1.65 W and is optimized for space conservation. Specific models include CTLM3410-M832D (Dual, NPN); CTLM7410-M832D (Dual, PNP); and CTLM3474-M832D (Complementary NPN and PNP) devices. Featuring typical VCE(SAT) of 20 mV (NPN) and 25 mV (PNP) at 50 mA, all devices are rated at 40 Volts VCBO,...

NEC Succeeds in Fabrication of CNT Transistor Using Coating Process; Confirms Feasibility of Environmentally Friendly Electronic Devices Using CNTs

Tokyo, Japan, Feb 13, 2008 - NEC Corporation today announced the successful development of a carbon nanotube (CNT) transistor using a coating process. The basic operation of the new transistor with advanced characteristics has been verified, confirming its application in the printed electronics field. Main features of the new CNT transistors (1) Based on an NEC device model, design guidelines...

IGBT Modules efficiently minimize design space.

Offering 85-253 Vac input voltage and 1.5-3 A output current, SLA6800MP and SMA6800MP series withstand voltages to 500 V (MOSFET breakdown voltage) and 600 V (IGBT breakdown voltage). This results in Inverter Power Module suited for controlling 3-phase motor inverters used to drive motors of residential and commercial appliances. IC consists of necessary power elements, 6 MOSFETS or 6 IGBTs, and...

ISO-Certified Plastic Injection Molding from Rodon

The Rodon Group is a proven leader in high-volume, close tolerance injection molding. We offer globally competitive, innovative manufacturing solutions for a broad range of industries. Check out our video to learn more.