Transistors

Vishay Intertechnology to Showcase Latest MOSFET, IC, Passive Component, and Diode Technologies at APEC 2018
Rectifiers (Diodes)

Vishay Intertechnology to Showcase Latest MOSFET, IC, Passive Component, and Diode Technologies at APEC 2018

MALVERN, Pa. - March 5, 2018 - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its product lineup for the Applied Power Electronics Conference and Exposition (APEC) 2018, taking place March 4-8 in San Antonio, Texas. Exhibiting in booth 609, Vishay will highlight its latest industry-leading power IC, passive component, diode, and MOSFET technologies for a wide range of applications. At...

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AFT31150N RF Power LDMOS Transistor offers 2700-3100 MHz operating range.
Transistors

AFT31150N RF Power LDMOS Transistor offers 2700-3100 MHz operating range.

AFT31150N RF Power LDMOS Transistor is suitable for applications operating in 2700–3100 MHz frequency range such as S-band radar systems, maritime radar and weather radar applications. Having a thermal resistance of 0.042 °C/W and P1dB of +51.8 dBm, unit provides a power gain of 17.0 dB at 3100 MHz with an efficiency of 50%. Product is tested to operate up to a maximum of 32 VDD operations and...

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IGT5259L50 GaN/SiC Transistor features a gain of 14 dB.
Transistors

IGT5259L50 GaN/SiC Transistor features a gain of 14 dB.

IGT5259L50 GaN/SiC Transistor is suitable for C-band pulsed radar applications. Unit offers 50W of peak pulsed output power at 50V drain bias and covers frequency range from 5.2 to 5.9 GHz. Product is housed in 20.32 Wide x 10.16 mm long RoHS-compatible flange-mount package with gold metallization and is fully-matched to 50 Ω. Transistor meets MIL-STD-750D specifications.

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GaN Field Effect Transistors are offered in hermetically sealed package.
Transistors

GaN Field Effect Transistors are offered in hermetically sealed package.

GaN Field Effect Transistors are offered in ISL70023SEH (100V, 60A) and ISL70024SEH (200V, 7.5A) models. ISL70023SEH offer a total gate charge of 14nC and with RDSON of 5mΩ whereas and ISL70024SEH provide 2.5nC and 45mΩ respectively. ISL70040SEH FET driver is designed for supplying ISL7002xSEH GaN FETs. This driver operates on 4.5 V to 13.2 V supply voltage. FETs are housed in 4-lead 9.0 mm x...

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An Introduction to Plastic Injection Molding
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An Introduction to Plastic Injection Molding

We developed this eBook with designers, engineers and purchasing specialists in mind. It is written to provide a basic understanding of plastic injection molding presses, processes and costs. Our goal is to make our customers more knowledgeable about what goes into making a plastic part.

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RF Power LDMOS Transistor handles VSWR of more than 20:1.
Transistors

RF Power LDMOS Transistor handles VSWR of more than 20:1.

Available in AFV10700H / AFV10700HS models in bolt-down and solder-down styles, RF Power LDMOS Transistor is housed in NI-780 air cavity package. Operating in 960-1215 MHz frequencies, unit is suitable for defense and commercial pulse applications such as friend or foe (IFF), secondary surveillance radars and ADS-B transponders. Transistor offers a power density of 700 W in 1.3 x 2.6 in. 50-ohm...

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RF Power LDMOS Transistor offers thermal resistance of 0.15º C/W.
Transistors

RF Power LDMOS Transistor offers thermal resistance of 0.15º C/W.

RF Power LDMOS Transistor is offered in MRF13750H/ MRF13750HS in bolt-down and solder-down styles. Suitable for applications such as 915 MHz industrial heating and welding systems and 1300 MHz particle accelerators, unit supports full dynamic range from 0 to 750 W. Housed in NI-1230 air-cavity ceramic package, transistor can handle a VSWR of 10:1. Product is internally input-matched and delivers...

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Vishay Intertechnology's SQJQ480E Automotive Grade Power MOSFET Honored in Electronic Products China Magazine's 2017 Top-10 Power Product Awards
Transistors

Vishay Intertechnology's SQJQ480E Automotive Grade Power MOSFET Honored in Electronic Products China Magazine's 2017 Top-10 Power Product Awards

MALVERN, Pa. - Oct. 10, 2017 - Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Vishay Siliconix SQJQ480E 80 V Automotive Grade TrenchFET® n-channel power MOSFET has been named by Electronic Products China magazine and 21IC as a winner in the 15th Annual Top-10 Power Product Awards. The AEC-Q101 qualified device was honored with the Green Energy Award in recognition of its high...

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RF Power LDMOS Transistors come with NXP product longevity program.
Transistors

RF Power LDMOS Transistors come with NXP product longevity program.

Suitable for VHF TV broadcast, sub-GHz aerospace, mobile radio and high-VSWR ISM applications, MRFX1K80H RF Power LDMOS Transistors are operated in 30 V to 65 V with 1.8 to 400 MHz frequency range. Units deliver 1800 W CW at 65 V and can handle VSWR of up to 65:1. Transistors feature ESD protection, unmatched input and output design. Offered in air cavity ceramic package, units can be used...

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C3M0075120J SiC MOSFET offers an output capacitance of 51 nC.
Transistors

C3M0075120J SiC MOSFET offers an output capacitance of 51 nC.

C3M0075120J silicon carbide power MOSFETs are available in seven-lead TO-263-7 surface mount package. Units come with 7 mm creepage distance between drain and source with drain source voltage (Vds max) of 1200 V. Featuring reverse recovery charge and reverse recovery time of 220 nC and 18 ns respectively, units provide a maximum junction temperature of 150°C. These MOSFETs can be used in EV...

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Tekna Manufacturing LLC Announces NFPA 99 Compliant Model 7200 Multiplace Chamber
Sponsored

Tekna Manufacturing LLC Announces NFPA 99 Compliant Model 7200 Multiplace Chamber

Tekna is a leader in Monoplace and Multiplace Hyperbaric Chambers for Hyperbaric Oxygen Therapy (HBOT), offering products that set the standard for quality and innovation. Our new 7200 series of multiplace chambers is a state-of-the-art system that integrates advanced engineering with a plethora of features and options making it the industry's premier HBOT system. To learn more, see our video.

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