New Transistors Products

Power MOSFETs are designed to exhibit minimal RDS(ON).

With on resistance from 2.1-5.5 mW, 30-40 V MOSFETs help optimize power dissipation and efficiency of high-power automotive systems. RoHS-compliant products utilize Pb-free terminals and meet automotive industry Q101 standard. These MOSFETs are also characterized for moisture sensitivity in accordance with Pb-free reflow requirements of joint IPC/JEDEC standard J-STD-020. Series, comprised of 11...

Gate Driver IC includes ground fault protection.

Featuring extra channel for PFC switch or inverter brake, 3-phase Model IRS26302D is suited for medium power appliance motor control applications. Device integrates power MOSFET/IGBT gate drivers with 3 high-side and 3 low-side referenced output channels to provide 200/350 mA drive current at up to 20 V MOS gate drive capability, operating up to 600 V. Negative Vs immunity circuitry is...

Low Vce(sat) BJTs come in various package options.

Offered as power control solution for portable electronics, NSSxxx SMT bipolar junction transistors (BJTs) are designed for use in low-voltage switching applications. PNP and NPN devices incorporate advanced silicon technology, feature saturation voltage of 45 mV @ 1 A, and offer current gain of 300. Featuring switching speeds that minimize noise harmonics, products are self-protected against...

FET Module is designed for synchronous buck converters.

Offered in 6 x 6 mm MLP package, Model FDMF6700 25 A integrated FET plus driver is suited for space-constrained applications such as small-form-factor desktops, media center PCs, ultra-dense servers, blade servers, graphic cards, networking and telecom equipment, and other dc-dc applications. It utilizes lead-free terminals and is characterized for moisture sensitivity in accordance with Pb-free...

All About Cable Drag Chains

This ebook provides an in-depth overview into cable drag chains.

X-Band GaN HEMT is suited for radar and medical applications.

Model TGI8596-50 is internally matched GaN HEMT power amplifier that operates in 8.5-9.6 GHz range with output power of 50 W. With supply voltage of 24 V at 25Ã-

Texas Instruments Sees Dramatic Results from New Chip Material, Addresses Power Leakage, Scaling for 45-nm and Beyond

High-k Approach Delivers Largest Reported Reduction in Power Drain without Sacrificing Other Key Parameters DALLAS, June 13 / / - Texas Instruments Incorporated (NYSE:TXN) (TI) today announced plans to integrate a high-k value material within the transistors in its most advanced, high performance 45-nanometer (nm) chip products. For years, high-k dielectrics have been under consideration to...

GaN Transistor targets broadband applications.

Covering applications from DC to 6 GHz, general-purpose Model CGH40025 typically produces 30 W RF output power at 55% drain efficiency with 14 dB of gain when used in 3.6 GHz amplifier. Featuring 0.15 x 0.54 in. or 0.15 x 0.2 in. footprint, High Electron Mobility Transistor is targeted for applications requiring broad instantaneous bandwidth with high power where amplifier form factor and weight...

Freescale LDMOS RF Power Transistors Optimize Performance of Wireless Base Stations Using Doherty Amplifiers

Seven new devices tailored specifically for signals with high peak-to-average ratios are now available HONOLULU (2007 IEEE MTT-S International Microwave Symposium) - June 4, 2007 - Freescale Semiconductor today introduced seven LDMOS RF power transistors that deliver exceptional performance and enable WCDMA and CDMA2000 base station transmitters to exploit the full potential of the Doherty...

LDMOS RF Power Transistor meets ISM application demands.

Operating at 50 V, MRF6VP11KH delivers pulsed RF output power of 1 kW @ 130 MHz. It is designed for operation from 10-150 MHz and leverages very high-voltage (VHV6) laterally diffused metal oxide semiconductor (LDMOS) technology. Suited for industrial, scientific, and medical applications, unit has integrated ESD protection, delivers 65% drain efficiency, and offers gain of more than 27 dB....

Bipolar Transistor suits tactical avionics applications.

Designed for 1,030 MHz pulsed applications, M/A-COM MAPRST1030-1KS is 1,000 W peak, class C bipolar transistor in hermetic, ceramic/metal package that tolerates 10:1 load mismatch without damage or loss in performance. Product features 8.0 dB min gain with 45% min collector efficiency on 50 Vdc supply. Power rating enhances range capabilities of avionics systems, and overall properties suit air...

Neagle Choice, LLC Announces New Available Services

Neagle Choice has long been known as a quality source for commercial sewing, printing, die cutting, and the manufacturing of a wide range of custom products. Enhancing our service capabilities has been the key to our success, and has driven our growth into many new and exciting markets. Continuing on this trajectory, we now offer precision laser cutting and etching, adding to our long line of manufacturing services. See our video to learn all about it.