Transistors

Vishay Introduces 4th-Gen MOSFET with Industry's Lowest Gate Charge Times
Transistors

Vishay Introduces 4th-Gen MOSFET with Industry's Lowest Gate Charge Times

The SIHH068N60E 600 V E Series Power MOSFETs are designed for telecom, industrial and enterprise power supply applications. The product is offered in PowerPAK® 8x8 package and is compliant to RoHS standards. The MOSFET features on-resistance of 0.059 Ω at 10 V and gate charge down to 53 nC. They provide output capacitances of 94 pf (Co(er)) and 591 pF (Co(tr)) with FOM of 3.1 Ω* nC. They are...

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MagnaChip to Commence Volume Production of High-Voltage IGBT Products for Power Module Targeted to Industrial Applications
Transistors

MagnaChip to Commence Volume Production of High-Voltage IGBT Products for Power Module Targeted to Industrial Applications

- IGBT P-series features 1200V, 100A and wide SOA (Safe Operating Area) for industrial applications, including 10kW+ 3-phase motors and photovoltaic inverters - SEOUL, South Korea and SAN JOSE, Calif., Nov. 26, 2018 /PRNewswire/ -- MagnaChip Semiconductor Corporation ("MagnaChip") (NYSE: MX), a designer and manufacturer of analog and mixed-signal semiconductor platform solutions, today...

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New High-Voltage Super Junction MOSFET Comes with a Breakdown Voltage of 900 V
Transistors

New High-Voltage Super Junction MOSFET Comes with a Breakdown Voltage of 900 V

The 90R1K4P High-Voltage Super Junction MOSFET is available in I-PAK and D-PAK package types. The unit features a maximum peak voltage of 950 V. It is suitable for high-voltage applications such as industrial smart metering, in both AC/DC and DC/DC high-speed switching converters and as a power supply for lighting equipment. The MOSFET's low total gate charge increases the switching speed and...

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New Avionics Transistor from Integra Technologies Features 120W Peak Output Power
Transistors

New Avionics Transistor from Integra Technologies Features 120W Peak Output Power

Integra Technologies’ new IGN1011L120 is an IFF avionics transistor uses GaN/SiC technology. It is designed for IFF avionic applications and is a high power GaN transistor. The transistor is specified for use under Class AB operation. The IGN1011L120 operates at 1.03 - 1.09 GHz, and has a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. It is made with chip and...

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New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018
Transistors

New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018

Integra displays new RF power devices at International Microwave Symposium. IGNP0912L1KW, an RF power module offers high thermal stability and supplies 1000 W of peak pulse power under the conditions of 2.5ms pulse width. IGT5259L50, a 50-ohm GaN/SiC transistor features 50W at 5-6 GHz and is ideal for pulsed C-band radar applications. IGN1214L500B high power GaN/SiC HEMT transistor includes 50V...

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Tekna Manufacturing LLC Announces NFPA 99 Compliant Model 7200 Multiplace Chamber
Sponsored

Tekna Manufacturing LLC Announces NFPA 99 Compliant Model 7200 Multiplace Chamber

Tekna is a leader in Monoplace and Multiplace Hyperbaric Chambers for Hyperbaric Oxygen Therapy (HBOT), offering products that set the standard for quality and innovation. Our new 7200 series of multiplace chambers is a state-of-the-art system that integrates advanced engineering with a plethora of features and options making it the industry's premier HBOT system. To learn more, see our video.

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