Transistors

New Yorker Electronics Now Showcasing New Line of 2016 Vishay Super 12 Power MOSFETs
Transistors

New Yorker Electronics Now Showcasing New Line of 2016 Vishay Super 12 Power MOSFETs

Vishay Siliconix SiHH E-Series (SiHH26N60E, SiHH21N60E, SiHH14N60E, SiHH11N60E) Offers Space-Saving Alternatives to Conventional Solutions NORTHVALE, NEW JERSEY – New Yorker Electronics is now offering the Vishay 600V E Series power MOSFETs in the compact PowerPAK® 8x8 package. The construction of the PowerPAK® allows one of the source pins to be arranged as a dedicated Kelvin...

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Transistors

N-Channel Power MOSFETs come in 5 x 6 mm package.

Housed in surface-mount PowerPAK® SO-8L package, 600 V Model SiHJ8N60E and 650 V Models SiHJ6N65E and SiHJ7N65E offer space-saving alternatives to MOSFETs in TO-252 package for lighting, industrial, telecom, computing, and consumer applications. Devices feature max on-resistance down to 0.52 Ω at 10 V and ultra-low gate charge down to 17 nC. Compared to leadless DFN packages, gullwing lead...

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Transistors

N-Channel MOSFETs support synchronous buck applications.

To save space and power in synchronous buck converters used for automotive applications, 12 V Model SQJ202EP and 20 V Model SQJ200EP each combine high- and low-side MOSFET in 5 x 6 mm PowerPAK® SO-8L dual asymmetric package. AEC-Q101-qualified devices offer high temperature operation to +175°C. SQJ202EP is suited for applications with bus voltages ≤ 8 V and offers low max...

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N-Channel Power MOSFET maintains typical Rdson of 54 mOhm.
Transistors

N-Channel Power MOSFET maintains typical Rdson of 54 mOhm.

Offered in 1.53 x 0.77 mm silicon-based package, 60 V Model CSD18541F5 maintains typical on-resistance of 54 mΩ at 10 V gate-to-source, and is designed to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. LGA package features 0.5 mm pitch between pads for easy mounting and is 80% smaller than traditional 60 V load switches. Integrated ESD protection...

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More Winning Stories - June 2016
Transistors

More Winning Stories - June 2016

El Segundo, CA - Integra Technologies, Inc. proudly announces that it has started shipping a 25,000-unit order of GaN/SiC S-band transistors. About Integra Technologies, Inc: Integra Technologies is the premier designer and manufacturer of high-power RF transistors, pallets and amplifiers to the Avionics, Radar, Air Traffic Control, Wireless Communication and ISM (industrial, scientific, medical)...

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Establishing GaN/SiC Leadership - May 2016
Transistors

Establishing GaN/SiC Leadership - May 2016

San Francisco, CA - Integra Technologies, Inc., the world's largest independent designer and manufacturer of High-Power RF Transistors and Modules with the highest power and efficiency on the market, has solidified its commanding presence in the GaN/SiC Radar business, self-relying on its own world-class Wafer Fab and proprietary design process. During the IMS Exhibition, new GaN/SiC...

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Transistors

GaN 1,200 W Transistor suits IFF avionics applications.

Pperating over instantaneous bandwidth of 1.03–1.09 GHz,Â- IGN1011L1200 high-power GaN-on-SiC transistor delivers efficiency and output power level needed by IFF transponder designers and others. Under ELM Mode S (48 x (32µs on, 18µs off) 6.4%) pulsing conditions, unit supplies minimum of 1,200 W peak output power with typical >17 dB gain and 75% efficiency...

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Electronic Amplifiers

Microsemi Showcases Leadership in Differentiated Products with Introduction of 15 New RF, Microwave and Millimeter Wave Devices at IMS 2016

New Product Exhibitions Featured in San Francisco, California May 22-27 ALISO VIEJO, Calif. - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it will feature 15 new products from its radio frequency (RF), millimeter wave integrated circuits (ICs), monolithic microwave integrated...

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