Transistors

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Richardson RFPD at APEC 2017

March 7, 2017 – Geneva, Ill.: Richardson RFPD, Inc. today announces its attendance and participation at the 2017 Applied Power Electronics Conference and Exposition (APEC). The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, including manufacturers,...

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GaN RF Transistor are CW and pulse capable.
Transistors

GaN RF Transistor are CW and pulse capable.

Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.

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C3M0065100K MOSFETS provide notch between drain and source pins.
Transistors

C3M0065100K MOSFETS provide notch between drain and source pins.

With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at...

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Transistors

N-channel MOSFETs for electric power switching applications.

Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.

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GaN on SiC HEMTs suit aerospace and defense applications.
Transistors

GaN on SiC HEMTs suit aerospace and defense applications.

Housed in 5 x 6 mm SMT package, 15 W, 50 Ω-matched Qorvo QPD1000 operates from 30 MHz to 1.215 GHz, suitable for handheld radios, radar, and jammer systems. Internally matched, 500 W QPD1003 operates from 1.2–1.4 GHz and 50 V supply rail. Device is suited for military and civilian L-band radar applications. Supplied in air cavity packages, 125 W QPD1008L and 65 W QPD1015L are wideband...

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Transistors

Vishay Intertechnology at Electronica 2016 Nov. 8-11 Munich, Germany Hall A5 Booth 141-142, Hall A6 Booth A11-A13

At electronica 2016, Vishay Intertechnology will be highlighting its latest industry-leading passive component, power MOSFET, IC, diode, and optoelectronics technologies for a wide range of applications. New Products on Display at electronica 2016 vPolyTan™ Multi-Anode Solid Tantalum Chip Capacitors Increase Volumetric Efficiency to Lower Component Counts Combining polymer tantalum technology...

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Richardson RFPD, Inc. LDMOS transistor designed to decrease amplifier size and BOM.
Transistors

Richardson RFPD, Inc. LDMOS transistor designed to decrease amplifier size and BOM.

Offering an output of 1500 W CW at 50 V, MRF1K50H eliminates the need for large number of transistors in high-power RF amplifiers. Suitable for applications ranging from laser and plasma sources to particle accelerators, unit operates upto 500 MHz. Product has high drain-source avalanche energy absorption capability and a wide frequency range for input and output, and is adaptable for...

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