New Transistors Products

Bipolar Power Transistor is suited for CRT displays.

Available in TO-264 or ISOWATT218FX packages, high-voltage HD1 series meets requirements for horizontal deflection in HD and Super-Slim CRT displays. Products are built with EHVS1 technology, which features float-zone collector on diffused substrate with high-voltage edge structure. They sustain breakdown voltages up to 1,500 or 1,700 V while simultaneously offering high-current capability (24-50...

P-Band Power Transistors deliver up to 9.6 dB power gain.

Designed to handle medium pulse widths up to 150 Ã-µs with 5% min duty cycle, Models 0910-60M, 0910-150M, and 0910-300M cover frequency for P-Band radar applications from 890 to 1,000 MHz with output power of 60, 150, and 300 W, respectively. Class C 300 W device offers 0.5 dB droop at 150 ns rise time with load mismatch VSWR of 3:1. By integrating 4, 6, or 8 of 0910-300M transistors with...

Infrared Phototransistors come in 1206 chip packages.

Miniature, SMT Series OP520/OP521 exhibits response times of 15 Ã-µs with peak response to 880 nm wavelength light. Model OP520 features opaque lens to shield it from ambient light, while Model OP521 has water clear lens. Silicon NPN phototransistors are RoHS-compliant and characterized at collector-emitter voltage of 30 V, emitter-collector voltage of 5 V, and collector current of 20 mA....

Low-VCE(sat) BJTs suit battery-powered applications.

Designed for use in low-voltage, high-speed switching applications, VCE(sat) bipolar junction transistors (BJTs) are offered as PNP and NPN devices in surface-mount SOT-23, SC-88, SC-74, TSOP-6, and ChipFET packages. Miniature transistors deliver turn-on voltage of less than 1.0 V and offer bi-directional current blocking capability. Suited for portable applications, products exhibit ESD...

Ergonomics Is Good Economics

While you don't need an MD to know that ergonomic designs are good for physical health, you probably didn't realize that these designs can actually be good for your economic health too.

Bipolar Transistors target power supply applications.

Emitter Switched Bipolar Transistor Models STC03DE170, STC05DE150, and STC08DE150 feature breakdown voltages of 1.7, 1.5, and 1.5 kV, respectively, and on-resistances of 0.55, 0.17, and 0.11 Ω, respectively. Units combine bipolar junction transistors with MOSFET, connected in cascade configuration and housed in single package. All 3 devices feature Vcs(sat) value of 0.9 V, minimizing conduction...

GaN Power FET achieves 174 W output at 6 GHz.

Able to support enhanced microwave communications, gallium nitride (GaN) power field effect transistor (FET) features optimized epitaxial layer with High Electron Mobility Transistor (HEMT) structure. It adopts 4-chip combination structure to minimize heat build-up, and chip structure is optimized in terms of gate length and distance of source. Gate electrode structure contributes to minimal gate...

Power Modules suit high-efficiency applications.

Manufactured in isolated packages, Field Stop Trench Gate IGBT standard power modules include 600, 1,200, and 1,700 V devices in SP4 and SP6 packages with min VCE(sat) saturation voltage of 1.5, 1.7, and 2 V. Modules are offered in 10 configurations, including buck, boost, dual common source, full bridge, triple phase leg, and triple dual common source. Optimal switching frequency is 20, 10-20,...

High Voltage Gate Driver ICs sense fault conditions.

Rated at 1,200 V, 3-phase analog Model IR22381 features integrated de-saturation and 0.5 Ã-µsec deadtime. Models IR2277 and IR2271 are high-speed, single-phase current sense interface ICs with synchronous sampling for motor drive applications. Models IR2214 and IR22141 drive single half-bridge circuits in power switching applications as well as 3-phase 380 Vac circuits at up to 50 A at 80Ã-

Transistor Library facilitates microwave design/simulation.

Available for Agilent Technologies' Advanced Design System, Non-Linear Transistor Library includes models with built-in substrate scalability and measurement validations including 2-tone intermodulation distortion, S-parameters, static and pulsed-IV, load- and source-pull, 1/f noise, noise parameters, and power compression. Models cover LDMOS FETs for high-power microwave amplifier designs up to...

Power MOSFETs save space for active clamp configurations.

Manufactured in SOT-23 and SC-70 packages, Si7439DP and Si7431DP are -150 and -200 V MOSFETs, respectively, built on p-channel TrenchFET technology. Products are intended for primary-side active clamp circuits in dc/dc converters for telecom, datacom, and industrial products. Also offered as 2 PowerPAK SO-8 devices for same application, Si7439DP offers on-resistance of 0.09 mΩ and Si7431DP is...

Aerzen USA Process Gas Blower and Compressor Installations Worldwide

Aerzen is firmly established as a global leader in compressed air, gas, and vacuum solutions. Our reputation as an industry leader is built on consistently delivering innovative products that are at the cutting edge of technology. To learn about the industries finest blowers and oil-free and oil-injected screw compressors, see our video.