Transistors

Latest P-Channel MOSFET is RoHS-Compliant and UIS Tested

Latest P-Channel MOSFET is RoHS-Compliant and UIS Tested

Offers on-resistance down to 17.3 mΩ maximum / 14.3 mΩ typical at 10 V. Provides ruggedness and reliability with high temperature operation to +175 °C. Ideal for automotive applications such as reverse polarity protection, battery management, high side load switching, and LED lighting.

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Latest SiC MOSFETs are UIL Tested

Latest SiC MOSFETs are UIL Tested

Come with RDS(ON) levels ranging from 20 mΩ to 350 mΩ. Feature softest temperature dependence of on-state resistance to offer very low conduction losses at all temperatures. Designed to be driven at +15V / -5V gate drive and offer broadest compatibility with existing commercial IGBT and SiC MOSFET gate drivers.

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New Fast Body Diode MOSFET Offered in PowerPAK 8x8 Package

New Fast Body Diode MOSFET Offered in PowerPAK 8x8 Package

SiHH070N60EF features low typical on-resistance of 0.061 Ω at 10 V and ultra-low gate charge down to 50 nC. Withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing. Provides low effective output capacitances Co(er) and Co(tr) of 90 and 560 pF, respectively.

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New SQJ264EP 60 V MOSFET is UIS-Tested and RoHS-Compliant

New SQJ264EP 60 V MOSFET is UIS-Tested and RoHS-Compliant

Features maximum on-resistance of 20 mΩ at 10 V and a typical gate charge of 9.2 nC, while the Channel 2 provides 8.6 mΩ at 10 V and 19.2 nC respectively. Provides ruggedness and reliability required for automotive applications with high temperature operation to +175 °C. Offered in PowerPAK® SO-8L dual asymmetric package and has increased efficiency in DC/DC switch-mode power supplies.

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