New Transistors Products

High Voltage MOSFETs can be used in harsh environments.

Available in hermetic, discrete packages, POWER MOS 7Ã-® transistors utilize metal on polysilicon gate structure. Products offer low gate charge (Qg) and 0.038-3.0 ohms On-Resistance, which results in maximum current carrying capacities from 4.0-54 A. Offered with breakdown voltages from 200-1,000 V, devices are suited for DC/DC converters, Power Factor Correction (PFC) pre-regulators,...

Low Voltage MOSFET suits power management applications.

Model FDJ129P P-channel MOSFET features PowerTrenchÃ-® technology in compact SC75 Flip Leaded Molded Package. Power dissipation is 1.8 W and max steady-state current rating is 4.2 A. Unit reduces system power drain by providing low-loss switching, with max pulsed current of 16 A. FLMP packaging eliminates wire-bonds to provide extremely low electrical resistance. It also provides low thermal...

Planar MOSFETs suit multi-market applications.

Series C and V2 QFETÃ-® planar MOSFETs combine DMOS and planar stripe structure technologies. They offer reduced on-state loss by lowering on-resistance and reduced switching loss by lowering gate charge and output capacitance. Products come in standard surface-mount and through-hole type packages and are suitable for power supplies, power factor correction, DC/DC converters, plasma display...

S-Band Transistors cover applications from 2.7 to 3.4 GHz.

Series S-Band Transistors use Gold Topside metallization and Gold Wires. Model 2727-125 is rated with input power of 15.8 W to provide minimum power output of 125 W and power gain in excess of 9.0 dB.

Pressure Sensor Selection Guide

This white paper provides information and a guideline for pressure sensor selection.

MOSFETs produce 750 W CW output power.

ARF465A/B and ARF1505 RF power MOSFETs are for high power, RF generator and amplifier applications, below 50 MHz. Devices feature power dissipation of 250 and 1,500 W respectively and withstand operating voltages to 300 V where 1,200 V breakdown rating gives 4x safety factor required for class E or C-E operation. ARF1505 Power MOSFET produces 750 W of 27 MHz RF power with single device in 1 x 1...

Transistors have application-specific design.

Lateral diffusion metal oxide semiconductor (LDMOS) transistors model 1011LD110 performs at 110 W peak, and model 1011LD200 performs at 200 W peak. Devices are for Avionics pulsed power amplifier market and offer gold metalization and use ceramic flange mount packages. Transistors offer 13 dB and 12 dB of gain respectively over the band 1,030 to 1,090 MHz. They are for operation at 32 V and...

Thin Film Transistor LCDs suit non-PC applications.

SVGA and VGA modules offer high resolution, wide viewing angles, high color saturation, and front-of-screen performance. SVGA module features CMOS/TTL digital interface and displays 262,144 colors with resolution of 800 x 600 dot pixels. XGA module features LVDS interface and displays 262,144 colors with resolution of 1024 x 768 dot pixels. Both 12.1 in. modules are suited for industrial,...

RF Transistor operates from DC to 2.7 GHz.

Model CRF-24010 Class A/B, 48 V silicon carbide MESFET offers minimum gain of 13 dB at 2 GHz, and has IM3 of -31 dBc at peak envelope power of 10 W. It features multi-octave instantaneous bandwidth, making is suitable for broadband large signal applications.

Infrared Switch suits limited space, non-contact switching.

QVE00033 phototransistor infrared transmissive switch with miniature infrared sidelookers is for non-contact switching in disk drives, card detectors, and controllers. Optical switch has temperature resistant black plastic housing and is 7.50 x 4.05 x 5.40 mm. GaAs LED faces silicon phototransistor across 2 mm gap with 0.4 mm aperture. Peak transmission wavelength is infrared at 940 nm and...

Discrete IGBTs replace thyristors and MOSFETs.

Discrete NPT 1700V IGBTs offer solution for applications requiring 1700V power switching. Housed in TO-247 discrete packages or surface mount TO-268, non-A model is for frequencies

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