Transistors

GaN 1,200 W Transistor suits IFF avionics applications.

Pperating over instantaneous bandwidth of 1.03–1.09 GHz,- IGN1011L1200 high-power GaN-on-SiC transistor delivers efficiency and output power level needed by- IFF transponder designers and others. Under ELM Mode S (48 x (32-µs on, 18-µs off) 6.4%) pulsing conditions, unit supplies minimum of 1,200 W peak output power with typical >17 dB gain and 75% efficiency from- 50 V supply voltage.

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Microsemi Showcases Leadership in Differentiated Products with Introduction of 15 New RF, Microwave and Millimeter Wave Devices at IMS 2016

New Product Exhibitions Featured in San Francisco, California May 22-27 ALISO VIEJO, Calif. - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it will feature 15 new products from its radio frequency (RF), millimeter wave integrated circuits (ICs), monolithic microwave integrated...

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DMOS FET Arrays feature 1.5 A sink-output driver.

DMOS FET Arrays feature 1.5 A sink-output driver.

Respectively differing- for their- use of active high or low control logic, TBD62064A and TBD62308A series offer 4 channels of 50 V/1.5 A output. Four channels can also be paralleled to increase current driving capability. Manufactured using 130 nm BiCD process technology, products offer control inputs up to 25 V and feature 4- common cathode clamp diodes. Available packages include HSOP16,...

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IGBTs suit high power switching systems.

IGBTs suit high power switching systems.

Utilizing proprietary Ultra Field Stop trench technology, Model NGTB40N120FL3WG has Ets of 2.7 mJ, while Model NGTB25N120FL3WG has Ets of 1.7 mJ. Both devices feature VCEsat of 1.7 V at their respective rated currents. Model NGTB40N120L3WG, optimized for low conduction losses, has VCEsat of 1.55 V, at rated current, with Ets of 3 mJ. All RoHS-compliant 1,200 V products are co-packaged with fast...

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GaN HEMT Die (28 V, 30 W) supports up to 8 GHz operation.

GaN HEMT Die (28 V, 30 W) supports up to 8 GHz operation.

As 28 V, 30 W GaN HEMT (high electron mobility transistor) bare die, CGH80030D- exhibits 12 dB typ small signal gain at 8 GHz, 17 dB typ small signal gain at 4 GHz, and 30 W typ PSAT. Suitable applications include UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure;...

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Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET)- lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and...

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Transphorm Strengthens Sales Channel with Addition of Richardson Electronics and A/D Sales

New global distributor and sales representative enhance technical support and supply chain in response to increased customer demand GOLETA, Calif. - Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced that it has added the global distributor Richardson Electronics and the Northeast representative A/D Sales to...

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Wolfspeed Has Shipped GaN RF Devices Surpassing 1.3 Gigawatts Output Power While Achieving Industry-Leading Reliability

Durham, N.C. - Wolfspeed, A Cree Company, announced that as of the end of 2015, it shipped GaN-on-SiC RF power transistors with a combined RF output power of more than 1.3 gigawatts. Wolfspeed achieved this milestone while maintaining a failure-in-time rate (FIT rate) of 5-per-billion device hours, illustrating the industry-leading reliability and performance of Wolfspeed’s GaN-on-SiC devices....

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