N-Channel MOSFET suits high-current DC/DC converters.

Press Release Summary:

Model STD150NH02L will support drain to source voltage of 24 V and max drain current of 150 A. At these ratings, on-resistance is 0.0035 Ohm. At 10 V, typical RDS(on) is 0.003 Ohm and at 5 V it is 0.005 Ohm. Low gate charge helps reduce switching losses, and low thermal resistance facilitates current handling. MOSFET is manufactured using 0.6 µm process, which utilizes metallization and bondless assembly techniques.

Original Press Release:

Low Resistance Puts Power MOSFET from STMicroelectronics in Line for DC/DC Converter Duty

Performance derived from a combination of process and package

Geneva, October 24, 2003 - STMicroelectronics (NYSE: STM) has introduced an N-channel MOSFET with a very low RDS(on), reduced gate charge and low thermal resistance. These characteristics have been optimized so the part is especially suitable for use in high-current DC/DC converters.

The STD150NH02L is an N-channel MOSFET that will support a drain to source voltage VDS of 24V and a maximum drain current ID of 150A. At these ratings the on-resistance RDS(on) is 0.0035Ohm. At 10V, the typical RDS(on) is 0.003Ohm and at 5V it is 0.005Ohm. This helps reduce the conduction losses in the part.

The part has also been engineered to ensure that it has a low gate charge QG. This helps reduce the switching losses the part experiences. The part has been designed to have a low thermal resistance, to improve its current handling.

The STD150NH02L is designed in the third generation of ST's StripFET manufacturing technology. This proprietary 0.6µm process uses unique metallization techniques and a bondless assembly technique to achieve good performance from a standard DPAK outline package. This makes the part especially suitable for use in high efficiency converters that are expected to run with high output currents.

Samples are available now, with full production expected in December 2003. The products will be priced at 0.48 US$ in quantities of 1M units.

Further information on this product is available at www.st.com/stripfet. The complete datasheet can be found on-line at http://st.com/stonline/books/pdf/docs/9072.pdf

About STMicroelectronics
STMicroelectronics is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. In 2002, the Company's net revenues were $6.32 billion and net earnings were $429.4 million. Further information on ST can be found at www.st.com.

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