LDMOS Transistor features thermally efficient packaging.

Press Release Summary:



Housed in RoHS/WEEE compliant plastic encapsulated surface mount package, SLD-1026Z Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor offers performance from 10-2,700 MHz. Transistor operates from 28 V, 50 mA current, and provides 19 dB gain, 35% drain efficiency, and -28 dBc 3rd order intermodulation products at 3 W output power. Product is suited for driver and power amplifiers in wireless base station, RFID, and radio applications.




Original Press Release:



Sirenza Microdevices Announces Production Release of a New High Linearity, 3 Watt LDMOS Transistor Featuring Proprietary Thermally Efficient Plastic Packaging



BROOMFIELD, Colo., July 24 // -- Sirenza Microdevices (NASDAQ:SMDI) today announced the production release of the company's first plastic encapsulated surface mount packaged Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor. The SLD-1026Z is housed in Sirenza's proprietary new low thermal resistance SOF-26 package, offering versatility and high performance from 10 - 2700 MHz.

Operating from 28V, 50mA quiescent current, the SLD-1026Z provides 19dB gain, 35 percent drain efficiency and -28dBc 3rd order intermodulation products at 3W output power. It is fabricated using Sirenza's high performance XeMOS II(TM) process.

"The SLD-1026Z is an exciting new addition to Sirenza's family of LDMOS power discretes," stated Jeff Gudewicz, strategic business unit director for standard products. "The SOF-26 package, coupled with the 3W high linearity LDMOS transistor, provides our customers an excellent low-cost solution for driver and power amplifiers in their wireless base station, RFID, and high-reliability radio applications."

The SLD-1026Z is available for immediate shipment in a RoHS/WEEE compliant proprietary plastic SOF-26 package. Samples and application design support are available by contacting Sirenza at apps@sirenza.com.

Sirenza Microdevices

Sirenza Microdevices is a supplier of radio frequency (RF) components. Headquartered in Broomfield, Colorado, with operations in China, Germany and the U.S., Sirenza Microdevices and its subsidiary Premier Devices design and develop RF components for the commercial communications, consumer, and aerospace and defense (A&D) equipment markets. Sirenza's integrated circuit (IC), multi-chip module (MCM) and passive product lines include amplifiers, power amplifiers, cable TV amplifiers, circulators, isolators, mixers, splitters, transformers, couplers, modulators, demodulators, transceivers, tuners, discrete devices, signal source components, government and military specified components, and antennae and receivers for satellite radio. Certifications include ISO 9001:2000 Quality Management System and ISO 14001:2004 Environmental Management System (registered by QMI). Detailed product information may be found on Sirenza's website at sirenza.com and at premierdevices.com.

NOTE: Sirenza Microdevices(R) and the Sirenza logo are trademarks of Sirenza Microdevices, Inc. All other trademarks are property of their respective owners.

CONTACT: Jodi Bochert of Sirenza Microdevices, +1-303-327-3193, ir@sirenza.com

Web site: http://premierdevices.com/

Web site: http://sirenza.com/

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