Transistors target high L-band pulsed radar applications.
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Press Release Summary:
Housed in hermetic metal package, High L-Band Series consists of Model types 1517-20M, 1517-110M, and 1517-250M, which cover frequency from 1,480-1,650 MHz with pulsed output power of 20, 110, and 250 W respectively. Transistors handle medium pulse widths of 200 µs with duty cycle of 10%. Model 1517-250M features 7.0 dB gain with 0.5 dB droop or less, and rise time of 150 ns.
Original Press Release:
Advanced Power Technology RF (APT-RF) Introduces High L-Band, Higher Power, High Gain, Medium Pulse Transistors
Expansion of L-Band Line Verifies Commitment to the Future of Radar Markets
Santa Clara, CA - Advanced Power Technology RF's Military & Aerospace Division (APT-RF) (Nasdaq:APTI), a leading supplier of silicon power transistors for radio frequency (RF) and microwave applications, is pleased to announce a new product family of high power transistors targeting the High L-Band (1480 MHz to 1650 MHz) Pulsed Radar Applications. These new products utilize newer chip designs and processing enhancements to offer state-of-theart performance, notably in high power and high gain over the specified frequency range with 200us pulse width and 10% duty cycle.
The High L-Band series transistors consists of three model types: 1517-20M, 1517-110M, and 1517-250M which cover the frequency for High L-Band Radar Applications from 1480 to 1650 MHz with a pulsed output power of 20W, 110W, and 250W respectively.
These transistors are designed to handle medium pulse widths of 200us with a duty cycle of 10%. The high performance, common base, class C, output stage, for example, offers unparalleled performance of 250W of peak power, 40% collector efficiency and extremely low droop, 0.5 dB or less, across the 200us pulse width. This state-ofthe-
art performance is achieved with the latest APT- RF Si bipolar junction transistor high power technology.
1517-250M Key Features:
o Designed for High L-Band Radar Application: 1480 - 1650 MHz
o Medium Pulse Format: 200us, 10%
o Excellent Output Power : 250W
o High Power Gain: 7.0 dB
o Superb Droop Performance: 0.5 dB
o Rise Time: 150 ns
o Collector Efficiency: 40%
o Compression: In Compression
o Load Mismatch : VSWR 3:1
o Vcc: +40V
o Package: Hermetic Metal Package
"We are extremely pleased to offer these top-notched High L-band products in addition to the existing APT-RF UHF, P-Band, L-Band, and S-Band Radar Product Family. These latest High L-Band products extend the frequency coverage available to our valued Radar customers." said Jerry Chang, Director of Radar and RF Module Business. "Radar
customers turn to APT-RF for our strong custom design and development capability, excellent technical and product support, and ability to deliver high volume transistors that provide the best repeatability and consistency in the industry."
With Operations in Bend, Oregon, Santa Clara, California, Montgomeryville, Pennsylvania, Boulder, Colorado and Bordeaux France, APT is a leading supplier of power semiconductors for RF, Microwave, Linear, and Switch Mode Applications. Visit our website at www.advancedpower.com.
For additional information, contact:
Advanced Power Technology
Phone: (541) 382-8028
Fax: (541) 388-0364
