Infrared Detectors incorporate infrared transmissive lens.

Press Release Summary:




Housed in miniature, surface mount package measuring 0.10 x 0.08 in., Series OP570 NPN Phototransistors provide collector-emitter breakdown voltages of 30 V, collector current of 20 mA, and power dissipation of 130 mW. On-state collector current is 2.5 mA min and collector-emitter dark current is 100 nA max. Operating from -25 to +85°C, RoHS-compliant units are suited for non-contact position sensing, infrared data acquisition, machine automation, and optical encoders.



Original Press Release:



OPTEK's Infrared Detectors Deliver Fast Response, High Photosensitivity



ROSEMONT, IL (March 21, 2006) - Providing design engineers with a high-sensitivity infrared detector capable of fast response times, TT electronics OPTEK Technology has developed a silicon phototransistor in a miniature surface mount package (0.10" [2.5mm] x 0.08" [2.0]) with a variety of lead options. Designated the OP570 Series, the NPN phototransistors feature an integral lens that enables the devices to operate with higher performance at lower cost.

"Incorporating an infrared-transmissive lens with the phototransistor gives the OP570 Series devices the capability to handle higher collector currents, with a narrower acceptance angle than unlensed devices," said Dave Birtalan, vice president of OPTEK Technology's components business unit. "And molding the lens into the surface mount package eliminates the need for an external lens, reducing overall assembly costs."

According to Birtalan, the OP570 Series NPN silicon phototransistors are being specified in applications such as non-contact position sensing, infrared data acquisition and detection, machine automation, optical encoders, and reflective and transmissive (interruptive) sensors.

Electrical performance of the OP570 Series NPN phototransistors is characterized at collector-emitter breakdown voltages of 30V, emitter-collector breakdown voltage of 5V, collector current of 20mA and power dissipation of 130mW. On-state collector current is 2.5mA (min.), and the collector-emitter dark current is 100nA (max.). OPTEK will also produce devices outside these specifications to meet customer requirements.

The OP570 Series devices are RoHS-compliant, as well as compatible with high temperature (260°C) lead free soldering processes. Operating temperature range is -25°C to +85°C.

The OP570 Series devices are available with four different lead configurations, and are mechanically and spectrally matched to OPTEK's OP270 Series 890nm GaAIAs infrared LEDs.

Typical pricing for the OP570 Series phototransistors starts at $0.23 each in quantities of 2,500 pieces, with samples available immediately. Production quantity lead times, if stock is not available, are from 6 to 8 weeks.

For samples of the OP570 Series NPN silicon phototransistors or more technical information, contact TT electronics' OPTEK Technology at 1645 Wallace Dr., Carrollton, TX, 75006; call 972-323-2200, e-mail at sensors@OPTEKinc.com or visit OPTEK on the web at OPTEKinc.com/irsmd.htm. In Europe, contact JP Delaporte at info@optek-europe.com. In Asia, contact T.H. Swee at thswee@optekasia.com or call +852-9190-4641.

OPTEK Technology is a leading manufacturer of standard and application-specific sensors using infrared, visible, magnetic and fiber optic technologies focused on applications in office machines, industrial equipment, encoders, automotive electronics, military and high-reliability applications, and medical diagnostic equipment. Headquartered in Carrollton, TX, the company is ISO/TS16949:2002 and BS EN ISO 9001:2000 certified, as well as ITAR registered. OPTEK Technology was acquired by TT electronics in December 2003. TT electronics plc is a global electronics company manufacturing a broad range of advanced electronic components, assemblies and sensor modules for the automotive, industrial, telecommunication, computer and aerospace markets.

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