Toshiba Adds Family of High-Voltage Power Mosfets Using Advanced π-MOS Vii Process Technology for AC/DC and Ballast Applications


500V and 600V MOSFETs Combine Advanced Process Technology with Optimized
Planar Cell Structure to Increase Power Density and Efficiency

IRVINE, Calif., January 20, 2009 - Toshiba America Electronic Components, Inc. (TAEC)* today introduced a new series of high-voltage ð-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. Developed by Toshiba Corp., the new lineup addresses market requirements for AC/DC and ballast applications, achieved through use of the company's seventh generation ð-MOS process, a high level of cell integration and optimization of the cell design.

The first 13 devices in the ð-MOS VII series include seven 500V and six 600V MOSFETs, targeted for use in switched-mode power supplies, such as AC adapters in notebook and desktop computers, flat panel displays, and ballasts used in lighting. Additional products are planned that will extend the product family from 400V to 650V and provide a wide selection of electrical characteristics, including drain current, RDS(ON) and gate capacitance.

"As a result of the optimization of the cell design, Toshiba has been able to reduce gate charge and capacitance without losing low RDS(ON) characteristics," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC. Compared to the company's previous generation ð-MOS VI MOSFETs, total gate cha r ge has been reduced approximately 40 percent, output capacitance has been reduced 25 percent, reverse transfer capacitance has been reduced 60 percent and input capacitance has been reduced 10 percent1.

The first seven 500V devices in the ð-MOS VII series provide a selection of drain current from 5 Amp (A) to 15A (max.), with a range of RDS(ON) , gate charge and avalanche energy to meet various application requirements. (Please see specification table next page.) The TK5A50D features drain current of 5A and RDS(ON) of 1.5 W (max.) ; the 7A TK7A50D has RDS(ON) of 1.22Ù; (max.); the 8A TK8A50D has RDS(ON) of 0.85 W (max.); the 10A TK10A50D has RDS(ON) of 0.72Ù; (max.); the 12A TK12A50D has RDS(ON) of 0.52 W (max.); the 13A TK13A50D has RDS(ON) of 0.47Ù; (max.); and the 15A TK15A50D has RDS(ON) of 0.3 W (max.) . These devices are packaged in Toshiba TO-220SIS packages, which are equivalent to industry standard TO-220F (isolated) packages, with dimensions of 10.0mm x 4.5mm x 17.8mm.

The initial ð-MOS VII series includes six 600V devices with drain current ranging from 3.5A to 13A (max.). A 3.5A device, the TK4A60DA, has RDS(ON) of 2.2Ù; (max.); the 6A TK6A60D has RDS(ON) of 1.25 W (max.); the 7.5A TK8A60DA has RDS(ON) of 1.0Ù; (max.); the 10A TK10A60D has RDS(ON) of 0.75Ù; (max.), the 11A TK11A60D has RDS(ON) of 0.65Ù; (max.); and the 13A TK13A60D has RDS(ON) of 0.43Ù; (max.).

Pricing and Availability
The new Toshiba ð-MOS VII high-voltage MOSFETs are available now. Prices in sample quantities start at $0.75.

Specifications for Toshiba Pi MOS 500V and 600V MOSFETs for AC-DC Power Supplies and Ba
Part Number Drain-Source Voltage
VDSS (max.) Product Number
Drain Current
ID (max.) Drain-source ON resistance RDS(ON) (max.)2 Gate Charge, Qg (typ.)3 Avalanche Energy Package
Single Pulse4 Repetitive5 Toshiba Package/
Dimensions (mm) Industry Standard Equivalent
TK5A50D 500V 5A 1.5Ù; 11nC 150mJ 3.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK7A50D 500V 7A 1.22Ù; 12nC 129mJ 3.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK8A50D 500V 8A 0.85Ù; 16nC 165mJ 4.0mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK10A50D 500V 10A 0.72Ù; 20nC 264mJ 4.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK12A50D 500V 12A 0.52Ù; 25nC 364mJ 4.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK13A50DA 500V 12.5A 2.47Ù; 28nC 416mJ 4.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK15A50D 500V 15A 0.3Ù; 40nC 542mJ 5.0mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK4A60DA 600V 3.5A 2.2Ù; 11nC 158mJ 3.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK6A60D 600V 6A 1.25Ù; 16nC 173mJ 4.0mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK8A60DA 600V 7.5A 1.0Ù; 20nC 270mJ 4.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK10A60D 600V 10A 0.75Ù; 25nC 363mJ 4.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK11A60D 600V 11A 0.65Ù; 28nC 396mJ 4.5mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)
TK13A60D 600V 13A 0.43Ù; 40nC 511mJ 5.0mJ TO-220SIS 10 x 4.5 x 17.8 TO-220F (Isolated)

Toshiba(TM)'s Discrete Products
Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: "Preliminary 2008 Worldwide Semiconductor Market Share Report," Gartner, December 2008). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers, LMOS logic, CMOS logic, photocouplers, TOSLINKs, LEDs, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.

*About TAEC and Toshiba Corp.
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, Preliminary 2008 WW Semiconductor Revenue, Dec. 2008). For additional company and product information, please visit www.toshiba.com/taec/ .

1Based on specifications from datasheets for ð-MOS VII TK10A60D and ð-MOS VI 2SK3569
2 VGS = 10V, I D = 1.8A (3.5A devices), 2.5A (5A devices), 3A (6A devices), 4A (7.5A and 8A devices), 5A (10A devices), 5.5A (11A devices), 6A (12A devices), 6.3A (12.5A devices), 6.5A (13A devices), 7.5A (15A devices).
3 VDD = 400 V, VGS = 10V, ID = 3.5A (3.5A devices), 5A (5A devices), 6A (6A devices), 7A (7A devices), 7.5A (7.5A devices), 8A (8A devices), 10A (10A devices), 11A (11A devices), 12A (12A devices), 12.5A (12.5A devices), 13A (13A devices), 15A (15A devices)
4 VDD = 90V, Tch =25°C (initial), RG = 25Ù;,
L = 22.5 mH, IAR = 3.5 A (3.5A devices)
L = 10.2 mH, IAR = 5 A (5A devices)
L = 8.4 mH, IAR = 6 A (6A devices)
L = 8.4 mH, IAR = 7.5 A (7.5A devices)
L = 4.4 mH, IAR = 8 A (8A devices)
L = 6.36 mH, IAR = 10 A (10A devices)
L = 5.73 mH, IAR = 11 A (11A devices)
L = 4.3 mH, IAR = 12 A (12A devices)
L = 4.53 mH, IAR = 12.5 A (12.5A devices)
L = 5.3 mH, IAR = 13 A (13A devices)
L = 4.1 mH, IAR = 15 A (15A devices)
5Repetitive rating: pulse width limited by maximum channel temperature.

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