Power Transistors (30 V) are optimized for power density.
Press Release Summary:
Able to achieve 1.6 mW (typ) RDS(ON) in 5 x 6 mm PowerFLAT(TM) package, STL150N3LLH6 utilizes STripFET(TM) VI DeepGATE(TM) technology and increases energy efficiency for power converters in products such as computers and telecom/networking equipment. Gate charge lets engineers use higher switching frequencies and specify smaller passive components, such as inductors and capacitors. Another SMT transistor, STD150N3LLH6, comes in DPAK package and has RDS(ON) of 2.4 mW.
Original Press Release:
STMicroelectronics Launches 30V Power Transistors Using Sixth-Generation STripFET(TM) Technology for Industry's Best Power Density
First members of STripFET(TM) VI DeepGATE(TM) family announced to boost efficiency for power converters, achieving 1.6 milliohms (typ) RDS(ON) in PowerFLAT(TM) 5x6 package
Geneva, March 26, 2009 - STMicroelectronics (NYSE: STM), a world leader in power semiconductors, has introduced a new series of 30V surface-mount power transistors, achieving on-resistance as low as 2 milliohms (max) to increase the energy efficiency of products such as computers, telecom and networking equipment.
Using its latest-generation STripFET(TM) VI DeepGATE(TM) process, which has high equivalent cell density, ST has achieved the industry's best RDS(ON) in relation to active chip size. This is around 20 percent better than the previous generation and allows the use of small surface-mount power packages in switching regulators and DC-to-DC converters. The technology also benefits from inherently low gate charge, which allows engineers to use high switching frequencies and thereby specify smaller passive components such as inductors and capacitors.
The broad choice of industry-standard outlines, including SO-8, DPAK, 5x6mm PowerFLAT(TM), 3.3 x 3.3mm PowerFLAT(TM), PolarPAK®, through-hole IPAK and SOT23-6L, offer compatibility with existing pad/pin layouts at the same time as improving efficiency and power density. This will maximize market opportunities for ST's STripFET VI DeepGATE family.
The first devices introduced using this new process include the STL150N3LLH6, which offers the lowest RDS(ON)* per area in the 5x6mm PowerFLAT package. The STD150N3LLH6 has also been introduced, in the DPAK package, with an RDS(ON) of 2.4 milliohms.
Samples are available for both devices, with production availability scheduled June 2009. Prices start at $0.95 for the STD150N3LLH6 and $1.20 for the STL150N3LLH6, in quantities of 2500 pieces.
Further information is available at www.st.com/pmos.
About STMicroelectronics
STMicroelectronics is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. In 2008, the Company's net revenues were $9.84 billion. Further information on ST can be found at www.st.com.
PolarPAK® is a registered trademark of VISHAY/SILICONIX
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