Transistors

Transistors

Transistors have application-specific design.

Lateral diffusion metal oxide semiconductor (LDMOS) transistors model 1011LD110 performs at 110 W peak, and model 1011LD200 performs at 200 W peak. Devices are for Avionics pulsed power amplifier market and offer gold metalization and use ceramic flange mount packages. Transistors offer 13 dB and 12 dB of gain respectively over the band 1,030 to 1,090 MHz. They are for operation at 32 V and...

Read More »
Transistors

MOSFETs produce 750 W CW output power.

ARF465A/B and ARF1505 RF power MOSFETs are for high power, RF generator and amplifier applications, below 50 MHz. Devices feature power dissipation of 250 and 1,500 W respectively and withstand operating voltages to 300 V where 1,200 V breakdown rating gives 4x safety factor required for class E or C-E operation. ARF1505 Power MOSFET produces 750 W of 27 MHz RF power with single device in 1 x 1...

Read More »
Thin Film Transistor LCDs suit non-PC applications.
Instrument Displays

Thin Film Transistor LCDs suit non-PC applications.

SVGA and VGA modules offer high resolution, wide viewing angles, high color saturation, and front-of-screen performance. SVGA module features CMOS/TTL digital interface and displays 262,144 colors with resolution of 800 x 600 dot pixels. XGA module features LVDS interface and displays 262,144 colors with resolution of 1024 x 768 dot pixels. Both 12.1 in. modules are suited for industrial,...

Read More »
Transistors

RF Transistor operates from DC to 2.7 GHz.

Model CRF-24010 Class A/B, 48 V silicon carbide MESFET offers minimum gain of 13 dB at 2 GHz, and has IM3 of -31 dBc at peak envelope power of 10 W. It features multi-octave instantaneous bandwidth, making is suitable for broadband large signal applications.

Read More »
Infrared Switch suits limited space, non-contact switching.
Miscellaneous Switches

Infrared Switch suits limited space, non-contact switching.

QVE00033 phototransistor infrared transmissive switch with miniature infrared sidelookers is for non-contact switching in disk drives, card detectors, and controllers. Optical switch has temperature resistant black plastic housing and is 7.50 x 4.05 x 5.40 mm. GaAs LED faces silicon phototransistor across 2 mm gap with 0.4 mm aperture. Peak transmission wavelength is infrared at 940 nm and...

Read More »
Bipolar Transistors triple power dissipation .
Transistors

Bipolar Transistors triple power dissipation .

MPPS(TM) Bipolar Transistors come in micro leaded packages. Size 3 x 2 mm package accommodates dual die and occupies same PCB area as single die SOT23 package, while 2 x 2 mm size supports single die and takes same space as SOT23 package. Off-board height of both packages is 0.9 mm, making them suitable for add-in card design and flat screen applications.

Read More »
Transistor/Schottky Diodes feature 3 x 2 mm package.
Rectifiers (Diodes)

Transistor/Schottky Diodes feature 3 x 2 mm package.

Provided in miniature micro leaded package (MLP), Series of MOSFET/Schottky and Bipolar/Schottky combination products offer board space savings of 88% over alternative SM8 packaged products. One NPN and 3 PNP bipolar combination products are offered, featuring true 1 A DC rated, 40 V fast switching Schottky barrier diode. Bipolar transistor's on-state voltage is typically 140 mV at 1 A, and range...

Read More »
Transistors

MOSFETs meet requirements of linear applications.

APL502 and APL602 are 600 V linear MOSFETs that provide high power dissipation and high forward biased safe operating area (FBSOA). They are available in TO-265, T-MAX(TM), and ISOTOP® (SOT-227) packages. Military screening and hermetic packaging options are also available. Applications include electronic loads, linear regulators, and class A amplifiers.

Read More »
IGBT Module is available in phase-leg topology.
Transistors

IGBT Module is available in phase-leg topology.

MII 400-12E4 Dual Pack IGBT module has ratings of 420 A Ic @ Tc = 25°C and 1200 V VCEs. Using 3rd generation Non-Punch-Through (NPTÂ-³) IGBT chips, module features 20% reduction in saturation voltage along with 20% reduction in switching losses. Associated fast recovery diodes are fabricated utilizing HiPerFRED(TM) technology that provides fast recovery with soft characteristics, low...

Read More »
Gorbel Introduces New Mobile Fall Protection Unit
Sponsored

Gorbel Introduces New Mobile Fall Protection Unit

Providing adequate fall protection is always a critical consideration and one that in many cases can be difficult to ensure. The new Mobile Fall Protection Unit is designed to facilitate positive fall protection in applications that would typically be difficult or impossible to provide with standard methods. To learn all about the advantages and convenience, see our video.

Read More »

All Topics