GaN HEMT Die (28 V, 30 W) supports up to 8 GHz operation.

Press Release Summary:




As 28 V, 30 W GaN HEMT (high electron mobility transistor) bare die, CGH80030D exhibits 12 dB typ small signal gain at 8 GHz, 17 dB typ small signal gain at 4 GHz, and 30 W typ PSAT. Suitable applications include UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and 2-way private radios.



Original Press Release:



Wolfspeed Releases New 28V 30W GaN HEMT Die



Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13, 2016 in Clearwater Beach, Fla.



Designed for up to 8GHz operation, the new 28V GaN HEMT die exhibits 12dB typical small signal gain at 8GHz, 17dB typical small signal gain at 4GHz, and 30W typical PSAT. Additionally, due to the superior material properties of GaN compared to silicon (Si) and gallium arsenide (GaAs), the new 28V, 30W GaN HEMT die also deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than Si and GaAs transistors.



As such, the CGH80030D is ideal for use in a diverse range of applications, including: UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios, among others.



“The increasingly widespread adoption of GaN-on-SiC RF technology in applications including: military and aerospace systems, telecom base stations, wideband test equipment, civil radar, and medical applications is driving R&D efforts at Wolfspeed,” said Jim Milligan, RF and microwave director, Wolfspeed. “As such, the new 28V, 30W GaN HEMT die we launched at WAMICON enables enhanced innovation, performance, and efficiency across a broad spectrum of RF and microwave applications in both the commercial and military sectors.”



During the event, Wolfspeed also revealed that their GaN-on-SiC RF power transistors recently completed qualification testing to demonstrate compliance with NASA EEE-INST-002 Level 1 reliability standards for satellite communications and radar equipment.



“2016 marked our tenth annual exhibition at WAMICON, which is globally recognized as the premier annual event dedicated to pushing the limits of RF and microwave technology and developing new solutions for next-generation challenges. So, we were thrilled to both release an effective new microwave and RF product solution and to announce our new space capabilities to the hundreds of academics and other professionals in attendance,” said Ryan Baker, RF marketing manager at Wolfspeed, and co-chair of WAMICON’s Exhibits and Sponsorship subcommittee.



For more information about Wolfspeed’s new CGH80030D 28V, 30W GaN HEMT bare die, please visit http://www.wolfspeed.com/cgh80030d. To purchase the new CGH80030D, please visit Mouser. For more information about Wolfspeed’s GAN-on-SiC RF power transistors having completed testing to demonstrate compliance with NASA reliability standards for space and satellite systems, please visit http://www.wolfspeed.com/news/space-qual. For all other inquiries about Wolfspeed™ RF products and foundry services, please visit http://www.wolfspeed.com/rf or contact Ryan Baker, marketing manager and North American sales manager, Wolfspeed, at ryan.baker@wolfspeed.com or 919-407-5302.



Christine Stieglitz

PR Executive

BtB Marketing Communications

christine.stieglitz@btbmarketing.com

900 Ridgefield Drive

Suite 270

Raleigh, NC 27609 | 919.872.8172



About Wolfspeed

Wolfspeed, A Cree Company, is liberating power and wireless systems from the limitations of silicon by leading the innovation and commercialization of next-generation systems based on silicon carbide and gallium nitride.



Wolfspeed’s wide bandgap semiconductor products for power and radio-frequency (RF) applications deliver new levels of performance through increased efficiency, higher switching frequency and reduced system size and weight for the transportation, industrial and electronics, energy and communications markets.



Please refer to www.wolfspeed.com for additional product and company information.



About Cree

Cree is leading the LED lighting revolution and making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, mercury-free LED lighting. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor products for power and radio frequency (RF) applications.



Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree® products are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, power suppliers and solar inverters.



Please refer to www.cree.com for additional product and company information.



Cree® is a registered trademark and Wolfspeed™ is a trademark of Cree, Inc.

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