Transistors offer minimal on-state-resistance, switching times.
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Press Release Summary:
Offered in ultra-low VCEsat and high-speed switching versions, BISS-4 (Breakthrough In Small-Signal) transistors are available in 20-60 V range and come in 2.9 x 1.3 x 1 mm SMD SOT23 and 2.9 x 1.5 x 1 mm SOT457 packages. Ultra-low VCEsat versions enable saturation voltage below 50 mV at 1 A, while high-speed switching versions come with reduced switching and storage times down to 125 ns. DC collector current is 4.3 A (peak ICM 8 A).
Original Press Release:
NXP Launches New Generation of Highly Efficient Low VCEsat Transistors
Best performance for on-state-resistance and switching times sets the pace in the industry
Eindhoven, Netherlands - NXP Semiconductors today announced the launch of the first eight products from its new 4th generation low VCEsat (BISS) transistors. The product family comes in two optimized branches - an ultra-low VCEsat and a high-speed switching branch. They are available in a voltage range from 20 V to 60 V and are housed in small SMD packages SOT23 (2.9 x 1.3 x 1 mm) and SOT457 (2.9 x 1.5 x 1 mm).
Setting a new benchmark for reduced on-state-resistance and keeping switching times to an absolute minimum, these transistors live up to their name as Breakthrough In Small-Signal (BISS) transistors. Transistors from the ultra-low VCEsat branch enable ultra-low saturation voltage below 50 mV at 1 A. The four new high-speed switching transistors come with reduced switching and storage times down to 125 ns. The new BISS-4 products demonstrate that bipolar transistor technology is an ideal option for switching applications that require higher performance and reduced switching losses.
"By introducing the 4th generation of BISS transistors with its superior low-ohmic substrate technology, NXP is setting the pace in the industry for low VCEsat transistors in small SMD packages and opening new applications for bipolar transistor technology," said Frank Thiele, product marketing manager for small-signal transistors, NXP Semiconductors.
The new BISS-4 transistors provide high circuit efficiency, low power losses and generate less heat than standard transistors in the same package. With a DC collector current of 4.3 A (peak ICM 8 A) in a small SOT23 package, these new products double the performance of former low VCEsat transistors in SOT23. The new BISS-4 types are designed for loadswitch, switch mode power supply (SMPS) and power management functions in high-volume consumer, communication, computing and automotive applications.
All eight new transistors are AEC-Q101 qualified and come in packages that are free of halogens and antimony oxides and comply with non-flammability classification UL 94V-0 and RoHS standards. Further types in SMD packages SOT89, SOT223 and SO-8 will expand the new low VCEsat (BISS) transistor portfolio end of Q1 2010. NXP launched the first BISS transistors family ten years ago and is a leading supplier for these products.
Pricing and Availability
NXP's new low VCEsat transistors are ready for ordering. Samples are available immediately for design-in.
Volume pricing ranges from $0.06 to $0.08 (USD).
Further information on the first products from the new 4th generation low VCEsat (BISS) transistor family can be found here:
Products optimized for load switch applications
PBSS4021NT
PBSS4021PT
PBSS4041NT
PBSS4041PT
Products optimized for load switch applications
PBSS4032NT
PBSS4032PT
PBSS4032ND
PBSS4032PD
About NXP Semiconductors
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power, Digital Processing and manufacturing expertise. These innovations are used in a wide range of automotive, industrial, consumer, lighting, medical, computing and identification applications. Headquartered in Europe, the company has about 29,000 employees working in more than 30 countries and posted sales of USD 5.4 billion in 2008. For more information visit www.nxp.com.
