IGBTs suit high power switching systems.

Press Release Summary:




Utilizing proprietary Ultra Field Stop trench technology, Model NGTB40N120FL3WG has Ets of 2.7 mJ, while Model NGTB25N120FL3WG has Ets of 1.7 mJ. Both devices feature VCEsat of 1.7 V at their respective rated currents. Model NGTB40N120L3WG, optimized for low conduction losses, has VCEsat of 1.55 V, at rated current, with Ets of 3 mJ. All RoHS-compliant 1,200 V products are co-packaged with fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses.



Original Press Release:



ON Semiconductor Further Extends Scope of IGBT Offering with 1200 V Devices Based on 3rd Generation Ultra Field Stop Technology



Setting new benchmarks in power efficiency for high power switching systems



PCIM - Nuremberg, Germany. – ON Semiconductor (Nasdaq: ON), driving energy efficiency innovations, has introduced a new series of insulated gate bipolar transistors (IGBTs) which utilize its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications. These 1200 volt (V) devices are able to achieve industry-leading total switching loss (Ets) characteristics; the remarkable improvement in performance is attributable in part to a very wide highly activated field-stop layer & optimized co-pack diode.



The NGTB40N120FL3WG has an Ets of 2.7 millijoules (mJ), while the NGTB25N120FL3WG has an Ets of 1.7 mJ. Both devices have a VCEsat of 1.7 V at their respective rated currents. The NGTB40N120L3WG is optimized for low conduction losses and has a VCEsat of 1.55 V, at rated current, with an Ets of 3 mJ. The new Ultra field stop products are co-packaged with a fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses. The NGTB25N120FL3WG and NGTB40N120FL3WG are highly suitable for use in Uninterruptible Power Supplies (UPS) and solar inverters, whereas the NGTB40N120L3WG is mainly targeted at use in motor drives.



“Our new Ultra field Stop IGBTs along with optimized fast recovery diodes we manage to hit the sweet spot that perfectly balances VCEsat  and Ets, thereby resulting in reduced switching losses, and enhanced power efficiency in hard switching applications, across a broad range of switching frequencies. At the same time it still offers the robust operation and cost effectiveness that engineers expect from IGBTs,” states Asif Jakwani, senior director and general manager for ON Semiconductor’s Power Discrete Division.



Packaging and Pricing

The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are all supplied in RoHS-compliant TO-8722-247 packages and respectively priced at $2.02, $1.76, and $2.12 per unit in 10,000 unit quantities.



About ON Semiconductor

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, sensors, logic, timing, connectivity, discrete, SoC and custom devices. The company’s products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical, aerospace and defense applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, a robust compliance and ethics program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe and the Asia Pacific regions. For more information, visit http://www.onsemi.com.

 

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Contacts

Sarah Rockey

Media Relations

ON Semiconductor 

(602) 244 - 5910

Sarah.Rockey@onsemi.com

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