Transistors

Bipolar Transistors target power supply applications.
Transistors

Bipolar Transistors target power supply applications.

Emitter Switched Bipolar Transistor Models STC03DE170, STC05DE150, and STC08DE150 feature breakdown voltages of 1.7, 1.5, and 1.5 kV, respectively, and on-resistances of 0.55, 0.17, and 0.11 Ω, respectively. Units combine bipolar junction transistors with MOSFET, connected in cascade configuration and housed in single package. All 3 devices feature Vcs(sat) value of 0.9 V, minimizing conduction...

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Transistors

GaN Power FET achieves 174 W output at 6 GHz.

Able to support enhanced microwave communications, gallium nitride (GaN) power field effect transistor (FET) features optimized epitaxial layer with High Electron Mobility Transistor (HEMT) structure. It adopts 4-chip combination structure to minimize heat build-up, and chip structure is optimized in terms of gate length and distance of source. Gate electrode structure contributes to minimal gate...

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Power Modules suit high-efficiency applications.
Transistors

Power Modules suit high-efficiency applications.

Manufactured in isolated packages, Field Stop Trench Gate IGBT standard power modules include 600, 1,200, and 1,700 V devices in SP4 and SP6 packages with min VCE(sat) saturation voltage of 1.5, 1.7, and 2 V. Modules are offered in 10 configurations, including buck, boost, dual common source, full bridge, triple phase leg, and triple dual common source. Optimal switching frequency is 20, 10-20,...

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High Voltage Gate Driver ICs sense fault conditions.
Transistors

High Voltage Gate Driver ICs sense fault conditions.

Rated at 1,200 V, 3-phase analog Model IR22381 features integrated de-saturation and 0.5 Â-µsec deadtime. Models IR2277 and IR2271 are high-speed, single-phase current sense interface ICs with synchronous sampling for motor drive applications. Models IR2214 and IR22141 drive single half-bridge circuits in power switching applications as well as 3-phase 380 Vac circuits at up to 50 A at...

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Transistors

Transistor Library facilitates microwave design/simulation.

Available for Agilent Technologies' Advanced Design System, Non-Linear Transistor Library includes models with built-in substrate scalability and measurement validations including 2-tone intermodulation distortion, S-parameters, static and pulsed-IV, load- and source-pull, 1/f noise, noise parameters, and power compression. Models cover LDMOS FETs for high-power microwave amplifier designs up to...

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Power MOSFETs save space for active clamp configurations.
Transistors

Power MOSFETs save space for active clamp configurations.

Manufactured in SOT-23 and SC-70 packages, Si7439DP and Si7431DP are -150 and -200 V MOSFETs, respectively, built on p-channel TrenchFET technology. Products are intended for primary-side active clamp circuits in dc/dc converters for telecom, datacom, and industrial products. Also offered as 2 PowerPAK SO-8 devices for same application, Si7439DP offers on-resistance of 0.09 mΩ and Si7431DP is...

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MOSFETs address high-voltage, fast-switching applications.
Transistors

MOSFETs address high-voltage, fast-switching applications.

With maximum gate-to-source voltage rated at ±30 V, SuperFET(TM) MOSFETs withstand high-speed voltage and current switching transients. Units are suited for transient-prone applications such as High Intensity Discharge lighting ballasts and power supplies for Plasma Display Panel televisions. Minimization of conduction losses that SuperFETs offer is important to lighting manufacturers...

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Power GaAs MESFET achieves drain efficiency over 55%.
Transistors

Power GaAs MESFET achieves drain efficiency over 55%.

Suited for wireless communications, KGF1934 power gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) achieves max drain efficiency with output power of 10 W at compression point of 1 db. Device also marks 25% in drain efficiency at normal operating output power level of 2 W. Specific applications include transmitter power amplifiers for W-CDMA and CDMA2000 wireless base...

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Transistors

Power MOSFETs boost output current in DC/DC converters.

Comprised of RJK0305DPB high-side device and RJK0301DPB low-side device, power MOSFET chip set can achieve up to 90% accuracy in DC-DC converter with 12 V input and 1.3 V/20 A output. Product components, manufactured in LFPAK (Loss-Free Package), exhibit power loss of 2.9 W. They are suited for DC-DC converters that change 12 or 19 V input into 0.8-2.5 V output typically used by circuits in...

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Transistors and Diodes are used in portable applications.
Rectifiers (Diodes)

Transistors and Diodes are used in portable applications.

Digital transistors, bipolar transistors, small signal Schottkys, and small signal switching diodes are manufactured in SOT-723 flat-lead package, which measures 1.2 x 1.2 x 0.5 mm. Utilizing 1.44 mmÂ-² PCB area, discrete devices include 50 signal transistors and signal diodes suited for use in cell phones, PDAs, digital still cameras, and notebook computers.

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Oilfield Improvements® Wheeled Rod Guide® Couplings Celebrate 35th Anniversary
Sponsored

Oilfield Improvements® Wheeled Rod Guide® Couplings Celebrate 35th Anniversary

For over 35 years our Wheeled Rod Guide Couplings, have been at work in oil fields across the globe. Our products are engineered to extend the service life of sucker rods and tubing, delivering cutting-edge innovation that enhances oilfield operation, maximizes output, and enhancing overall operations. To learn about the advantages of using Wheeled Rod Guide Couplings in your wells, see our video.

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