Transistors

Discrete GaAs Transistors work with CPE applications.
Transistors

Discrete GaAs Transistors work with CPE applications.

Suited for WiMAX basestations and customer premise equipment (CPE) applications up to 3.8 GHz, MAAP-003438-005PP0 and MAAP-003438-010PP0 are 12 V GaAs pseudomorphic high electron mobility transistors (PHEMTs) that provide respective RF power levels of 5 and 10 W. Model MAAP-003438-005PP0 has typ 10 dB gain with lead-free, 3 mm PQFN 16-lead SMT packaging, while MAAP-003438-010PP0 has typ 9.5 dB...

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Infrared Detectors incorporate infrared transmissive lens.
Transistors

Infrared Detectors incorporate infrared transmissive lens.

Housed in miniature, surface mount package measuring 0.10 x 0.08 in., Series OP570 NPN Phototransistors provide collector-emitter breakdown voltages of 30 V, collector current of 20 mA, and power dissipation of 130 mW. On-state collector current is 2.5 mA min and collector-emitter dark current is 100 nA max. Operating from -25 to +85°C, RoHS-compliant units are suited for non-contact...

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Signal Generators

RF Power MOSFET operates at dc voltages up to 165 V.

Housed in flangeless T3 package, Model ARF475FL uses 2 die configured for push-pull operation and is capable of 1,000 W pulsed output and 300 CW at up to 150 MHz. To obtain high power dissipation, backside of package is lapped to mate with system heat sink. Coplanar lead arrangement facilitates circuit layout and provides over 2,500 V isolation between any terminal and mounting surface....

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Transistors

NEC & NEC Electronics Succeed in Development of Breakthrough Device Technology Capable of Enhancing Functionality of Sub-10nm Transistors

TOKYO, Dec. 6 / -- NEC Corporation (NASDAQ:NIPNY) and NEC Electronics Corporation today announced the joint development of new breakthrough device technology for low-power, high performance system LSI. Based on the ultimate scaling of conventional bulk planar MOSFETs, the new technology is capable of improving on-off ratio, enhancing the functionality of sub-10nm planar bulk transistors. The new...

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Transistors

Automotive Power MOSFET offers typ RDS(on) of 5 milliohms.

Offered in DPAK and TO-220 packages, STD95N04 employs STripFET(TM) technology, which enables max RDS(on) of 6.5 milliohm and maintains standard threshold drive requirement. Product, compliant with AEC Q101 Stress Test qualification for discrete semiconductors, has max operating temperature of 175°C and is 100% avalanche rated. This 80 A, 40 V standard level DPAK device is intended for use...

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Transistors

Transistors target high L-band pulsed radar applications.

Housed in hermetic metal package, High L-Band Series consists of Model types 1517-20M, 1517-110M, and 1517-250M, which cover frequency from 1,480-1,650 MHz with pulsed output power of 20, 110, and 250 W respectively. Transistors handle medium pulse widths of 200 Â-µs with duty cycle of 10%. Model 1517-250M features 7.0 dB gain with 0.5 dB droop or less, and rise time of 150 ns.

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Bipolar Power Transistor is suited for CRT displays.
Transistors

Bipolar Power Transistor is suited for CRT displays.

Available in TO-264 or ISOWATT218FX packages, high-voltage HD1 series meets requirements for horizontal deflection in HD and Super-Slim CRT displays. Products are built with EHVS1 technology, which features float-zone collector on diffused substrate with high-voltage edge structure. They sustain breakdown voltages up to 1,500 or 1,700 V while simultaneously offering high-current capability (24-50...

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Transistors

P-Band Power Transistors deliver up to 9.6 dB power gain.

Designed to handle medium pulse widths up to 150 Â-µs with 5% min duty cycle, Models 0910-60M, 0910-150M, and 0910-300M cover frequency for P-Band radar applications from 890 to 1,000 MHz with output power of 60, 150, and 300 W, respectively. Class C 300 W device offers 0.5 dB droop at 150 ns rise time with load mismatch VSWR of 3:1. By integrating 4, 6, or 8 of 0910-300M transistors with...

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Infrared Phototransistors come in 1206 chip packages.
Transistors

Infrared Phototransistors come in 1206 chip packages.

Miniature, SMT Series OP520/OP521 exhibits response times of 15 Â-µs with peak response to 880 nm wavelength light. Model OP520 features opaque lens to shield it from ambient light, while Model OP521 has water clear lens. Silicon NPN phototransistors are RoHS-compliant and characterized at collector-emitter voltage of 30 V, emitter-collector voltage of 5 V, and collector current of 20 mA....

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Transistors

Low-VCE(sat) BJTs suit battery-powered applications.

Designed for use in low-voltage, high-speed switching applications, VCE(sat) bipolar junction transistors (BJTs) are offered as PNP and NPN devices in surface-mount SOT-23, SC-88, SC-74, TSOP-6, and ChipFET packages. Miniature transistors deliver turn-on voltage of less than 1.0 V and offer bi-directional current blocking capability. Suited for portable applications, products exhibit ESD...

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