Transistors

Transistors

C-Band GaAs FETs suit satellite and radar applications.

Offering 48.0 dBm typ output power, TIM6472-60SL and TIM7179-60SL are 60 W C-band gallium arsenide field effect transistors (GaAs FETs) with respective frequency ranges of 6.4-7.2 GHz and 7.1-7.9 GHz. They are suited for use in Solid State Power Amplifiers (SSPAs) for communications applications primarily supported by TWTAs. Also available, TIM5359-80SL is 80 W GaAs FET with 49.0 dBm typ output...

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Transistors

RFMD® to Demo GaN High-Power Transistor Line-Up for UMTS Applications at IEEE MTT-S 2006

RFMD to Showcase Its Broad Product Portfolio of Industry-Leading Wireless Solutions GREENSBORO, N.C.- June 6, 2006 -RFMD® (NASDAQ:RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it will conduct a live demonstration of its Gallium Nitride (GaN) High Electron Mobility...

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Transistors

NEC Develops Highly-Reliable Metal/High-K Gate Stack Transistor

Tokyo, Japan, June. 20, 2006 - - NEC Corporation (NEC) today announced the joint development of a new technology for realizing low-power and high-performance SOC devices of technology nodes of 65 nm, 45 nm and beyond. The developed technology enables fabrication of a highly reliable metal/high-k gate transistor utilizing a simple method. This research result was achieved by the following: 1) Use...

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Transistors

GaN HEMT is suited for WiMAX applications.

Optimized for broadband wireless access and WiMAX applications operating from 3.3-3.9 GHz, CGH35015 is 15 W packaged gallium nitride (GaN) high electron mobility transistor (HEMT) that typically produces 2.5 W of average output power and 20% drain efficiency over frequency range. It features 11 dB of small signal gain and 2% error vector magnitude (EVM) under orthogonal frequency-division...

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Transistors

Cree Demonstrates 400 Watts of RF Power for GaN S-Band Transistor

DURHAM, NC, JUNE 13, 2006 - Cree, Inc. (NASDAQ: CREE) announced today that it has demonstrated a new high-power gallium nitride (GaN) RF power transistor for use in mobile WiMAX applications. The discrete transistor produces a record 400 watts of peak pulsed RF power at 3.3 GHz with 10.6 dB of associated power gain and 62-percent drain efficiency when operated at 40 volts. "We are pleased to...

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Transistors

Microsemi to Demo Silicon Carbide Technology at 2006 IEEE MTT-S International Symposium

IRVINE, Calif., June 8, 2006 (PRIMEZONE) - Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors, is featuring a next-generation Wide Band Gap Silicon Carbide technologydemonstration at the 2006 IEEE MTT-S International Microwave Symposium and Exhibition in San Francisco's Moscone Center,...

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Electronic Amplifiers

Microsemi RF/Microwave Technology on Display at 2006 IEEE MTT-S International Symposium

IRVINE, Calif., June 8, 2006 (PRIMEZONE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors, is displaying its latest microwave and RF power products and wireless LAN power amplifiers at the 2006 IEEE MTT-S International Microwave Symposium and Exhibition in San Francisco's Moscone...

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Transistors

Cree to Demonstrate New GaN WiMAX Transistors at IEEE MTT-S 2006

DURHAM, NC - JUNE 9, 2006 - Cree, Inc. (NASDAQ: CREE), announced today that it will demonstrate three new Gallium Nitride (GaN) high electron mobility transistors (HEMT) targeted for WiMAX applications ranging from 2.4 to 3.9 GHz next week. The new power transistors are debuting at Booth 1143 at the IEEE MTT-S International Microwave Symposium 2006 in San Francisco, June 13-15. Cree's new 30- and...

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Trench IGBTs reduce power dissipation in inverters.
Transistors

Trench IGBTs reduce power dissipation in inverters.

Offering reduced power dissipation in inverters up to 2.5 kW in motor control applications, 600 V Insulated Gate Bipolar Transistors (IGBTs) are co-packaged with soft recovery diodes and have low collector-to-emitter saturation voltage. Other features include up to 175°C max operating temperature, high peak turn-off, 5 Â-µs short-circuit rating, and 10 kV/µS induced turn-on...

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Transistors

Power MOSFETs come in compact package with low profile.

Assembled in 5 x 6 mm PolarPAK® package, STK800 and STK850 are respectively rated at 20 and 30 A and have 0.8 mm profile made possible by top and bottom heat dissipation paths. STripFET(TM) technology is used for optimal cell density, achieving RDS(on) of 6.0 milliohm (STK800) and 2.9 milliohm (STK850) at 10 V. Capacitance and total gate charge make STK800 suited for use as control FET in...

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Dodge® Raptor Coupling Now Available in Three Larger Sizes
Sponsored

Dodge® Raptor Coupling Now Available in Three Larger Sizes

The Dodge Raptor coupling epitomizes the innovation and value that has made Baldor a world leader in industrial electric motors. For almost 100 years Baldor has been the go-to source for industries across the globe. The Raptor coupling is just one example of our dedication to engineered excellence and commitment to providing value and performance. See our video to learn more.

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