Transistors

Rugged VHF Power RF MOSFET operates up to 165 Vdc.

Rugged VHF Power RF MOSFET operates up to 165 Vdc.

Comprised of single die in ruggedized SOE package, ARF521 is capable of 150 W output power at up to 81 MHz. Wafer fabrication process maximizes Safe Operating Area, load mismatch tolerance, and thermal stability in addition to promoting Class AB operation capability. Capable of up to 150 MHz operation, product facilitates combining DC power supply and RF power amp into integrated assembly....

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Power Transistor suits TCAS avionics transmitters.

Designated Model TCS1200, Class C biased, bipolar transistor provides 1,200 W of output power at 1,030 MHz with 32 -µS, 2% pulsing. Unit runs on 52 V, enabling design with existing 50-52 V TCAS power supplies. Die utilize gold metallization and integral emitter ballast resistors for reliability.

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N-Channel MOSFET offers 8 kV ESD protection for PCs.

RoHS-compliant FDS881XNZ series provides avalanche and high-peak current capability to ensure system safety by surviving voltage spikes that may afflict battery packs. Integrated ESD protection diode offers model-dependent values from 3,600-6,400 V. Respectively featuring max RDS(ON) values of 4, 4.5, and 7 mW, FDS8812NZ suits notebook computers, FDS8813NZ suits all-in-one laptops with displays...

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Mouser Electronics Expands ON Semiconductor Product Portfolio

Expansion Includes Power Management Products and Discrete Devices. Mansfield, Texas, USA - July 18, 2007 - Mouser Electronics, Inc., known for its rapid introduction of the newest products, today announced the expansion of its portfolio of ON Semiconductor products. The expanded linecard focuses on the manufacturer's newest power management, circuit protection, analog, logic, and discrete...

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Toshiba to Showcase C-, X- and Ku-band GaAs FETs, X-Band GaN HEMT for Radar and Medical Applications, and RF Devices for Two-Way Radios and DTTV Tuners at MTT-S

Microwave, RF And Small Signal Devices Will Be On Display At IEEE MTT-S International Microwave Symposium, June 5-7 In Hawaii HONOLULU, Hawaii, June 5 / - Toshiba America Electronic Components, Inc. (TAEC)* will feature an extensive array of C-, X- and Ku-band gallium arsenide (GaAs) field effect transistors (FETs) developed by Toshiba Corp. (Toshiba) as well as a broad line-up of radio frequency...

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Low Vce(sat) BJTs come in various package options.

Offered as power control solution for portable electronics, NSSxxx SMT bipolar junction transistors (BJTs) are designed for use in low-voltage switching applications. PNP and NPN devices incorporate advanced silicon technology, feature saturation voltage of 45 mV @ 1 A, and offer current gain of 300. Featuring switching speeds that minimize noise harmonics, products are self-protected against...

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FET Module is designed for synchronous buck converters.

Offered in 6 x 6 mm MLP package, Model FDMF6700 25 A integrated FET plus driver is suited for space-constrained applications such as small-form-factor desktops, media center PCs, ultra-dense servers, blade servers, graphic cards, networking and telecom equipment, and other dc-dc applications. It utilizes lead-free terminals and is characterized for moisture sensitivity in accordance with Pb-free...

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Texas Instruments Sees Dramatic Results from New Chip Material, Addresses Power Leakage, Scaling for 45-nm and Beyond

High-k Approach Delivers Largest Reported Reduction in Power Drain without Sacrificing Other Key Parameters DALLAS, June 13 / / - Texas Instruments Incorporated (NYSE:TXN) (TI) today announced plans to integrate a high-k value material within the transistors in its most advanced, high performance 45-nanometer (nm) chip products. For years, high-k dielectrics have been under consideration to...

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GaN Transistor targets broadband applications.

Covering applications from DC to 6 GHz, general-purpose Model CGH40025 typically produces 30 W RF output power at 55% drain efficiency with 14 dB of gain when used in 3.6 GHz amplifier. Featuring 0.15 x 0.54 in. or 0.15 x 0.2 in. footprint, High Electron Mobility Transistor is targeted for applications requiring broad instantaneous bandwidth with high power where amplifier form factor and weight...

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