Transistors

IGBT Modules lend to power efficient designs.

Comprised of 3 types, MIPAQ(TM) modules promote efficient power inverter designs in UPS, industrial drives, solar power plants, and air conditioning systems. All MIPAQ products feature IGBT (Insulated Gate Bipolar Transistor) 6-pack configuration. MIPAQ base module integrates shunts; MIPAQ sense module offers additional current measurement feature that is fully digital with galvanically isolated...

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High-Voltage IGBT promotes power and motor control.

Offering accelerated switching and minimal conduction losses, short-circuit rated XPT is designed for parallel operation. Merging of IXYS cell design with XPT (Xtreme light Punch Through) wafer technology optimizes static and dynamic behavior as well as reliable operation during power turn-off testing. With low Vce(sat) of 1.8 V at 25-

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Single-Phase High-Voltage ICs suit motor drive applications.

Single-Phase High-Voltage ICs suit motor drive applications.

Available in 8-lead SOIC, IRS260xD Series power MOSFET and IGBT drivers are designed for sinusoidal and trapezoidal motor control. Model IRS2607D high- and low-side driver features outputs in phase with inputs. With 540 nsec internal dead-time, IRS2608D half-bridge driver offers high-side output in phase with HIN input and low-side output out of phase with LIN input, while IRS2609D features...

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NXP Delivers Breakthrough Power Efficiency on LDMOS

Optimized for high power use and Doherty applications Eindhoven, The Netherlands, May 14, 2008 - NXP Semiconductors, the independent semiconductor company founded by Philips, today launched the BLC7G22L(S)-130 base station power transistor - the first of its products to feature NXP's industry-leading Gen7 LDMOS technology - optimized for high power use and Doherty amplifier applications. The...

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Bipolar Junction Transistors have 30 MHz transition frequency.

Models FJP5200OTU, FJP1943OTU, FJPF5200OTU, and FJPF1943OTU have Pb-free terminals and are characterized for moisture sensitivity in accordance with Pb-free reflow requirements of joint IPC/JEDEC standard J-STD-020. Devices have extended beta that promotes their linearity and minimizes THD, contributing to fidelity and overall sound of audio products. Available in TO-220 and TO-220F (insulated)...

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Power MOSFET has low conduction and switching losses.

TrenchFET Gen III Si7192DP, n-channel device in PowerPAK-® SO-8 package, features maximum on-resistance of 2.25 mW at 4.5 V gate drive voltage. On-resistance times gate charge, key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98. Unit is used as low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Low...

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Microwave Transistor provides over 90 W of saturated power.

Consisting of pair of GaN HEMT transistors in Gemini ceramic-metal package, CGH40090PP microwave transistor suits general-purpose military and industrial applications such as electronic warfare, radar, tactical radios, and EMC applications. It can operate over 500-2,500 MHz frequency range, and can be used in either push-pull or balanced amplifier designs.

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GaN HEMT Transistors handle 5 GHz WiMAX applications.

GaN HEMT Transistors handle 5 GHz WiMAX applications.

Capable of operating in 5.8 GHz ISM band as well as 5.3 and 5.47 GHz U-NII bands, Models CGH55015F and CGH55030F gallium nitride (GaN) HEMT transistors are available in 15 and 30 W versions, respectively. They offer linearity of better than 2.5% EVM at average power under any WiMAX signal at 25% drain efficiency covering instantaneous bandwidth of 5.5-5.8 GHz. Both transistors are available with...

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FETs are suited for multiple wireless applications.

Measuring 1.0 x 0.5 x 0.25 mm, VMMK-1218 and -1225 low profile devices do not require negative voltage to operate, and leverage chip scale packaging technology which enables miniaturization. Model VMMK-1225 supports 0.5-26.5 GHz frequency ranges with noise figure of less than 0.95 dB and 12 dB available gains under 50 W conditions at 12 GHz. Model VMMK-1218 operates from 0.5-18 GHz with noise...

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MOSFET suits high-power density and low loss applications.

Supplied in TO-247 package, Super-Junction FDmesh II model STW55NM60ND combines optimized switching performance and on-resistance (0.060 W) to meet needs of efficiency-focused applications. Peak drain current of 51 A allows one 600 V N-channel MOSFET to replace multiple components in converters for space-constrained applications, while dv/dt rating lends to reliability during switching.

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