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Transistors

RFMD® Receives First GaN Product Purchase Order from Tier-One Wireless Base Station Manufacturer

GREENSBORO, NORTH CAROLINA - November 12, 2009 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced RFMD-® has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process...

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RFMD® Announces Major Gallium Nitride (GaN) Milestones

RFMD® Announces Major Gallium Nitride (GaN) Milestones

RFMD Qualifies and Releases First GaN Device Shipments of RF3931 Unmatched Power Transistors Commence to Multiple High Power Amplifier (HPA) Manufacturers GREENSBORO, NORTH CAROLINA - November 11, 2009 - RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced that RFMD-® has qualified and released the...

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Power MOSFET Transistors operate from -55 to +225

Power MOSFET Transistors operate from -55 to +225

Available in TO-254 metal can package, 40 V N-channel power MOSFETs, CHT-NMOS4005, CHT-NMOS4010 and CHT-NMOS4020 have input capacitance from 460 pF to 1.4 nF and on-resistance from 0.15-0.40 W. Models CHT-NMOS4005, CHT-NMOS4010, and CHT-NMOS4020 are rated, respectively, for 5, 10, and 20 A maximum drain current. Operated at 225-

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Dual High-Voltage IGBT is rated at 4,500 V/150 A.

Dual High-Voltage IGBT is rated at 4,500 V/150 A.

Developed for use on 4,160 Vac lines, QID4515001 is 4,500 V/150 A Dual High Voltage IGBT (HVIGBT) with isolation voltage of 10.2 kV rms. Integrated thermal management system incorporates AIN ceramic substrate and copper baseplate. In addition to use in utility power supplies, pulse power, and traction drives, applications for this product include medium voltage industrial drives, auxiliary power...

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PIN Photodiodes/Phototransistors are automotive-qualified.

Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 -µA and spectral...

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IGBTs minimize energy loss in motor control circuits.

IGBTs minimize energy loss in motor control circuits.

Rated for 1,200 V operation, Models STGW30N120KD and STGW40N120KD are suited for applications up to 30 and 40 A, respectively. Units can survive short circuits lasting up to 10 -µs, making them resistant to common causes of motor-controller failures, such as error in gate drive signal, shorting at grounding, and breakdown of motor phase-to-phase insulation. Housed in TO-247 package, transistors...

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Applied Power the Driving Force in Power Electronics

Applied Power the Driving Force in Power Electronics

APS is a high-tech company concentrated exclusively on power electronics, providing innovative, leading-edge, quality-engineered products. Our technical expertise and practical experience allows us to develop and produce power electronic products that satisfy the toughest requirements and withstand the harshest environments. APS featuring a complete converter & controllers solution with our...

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Intelligent Power Modules suit 3-phase inverter applications.

Intelligent Power Modules suit 3-phase inverter applications.

Suited for applications in medium power range up to 20 hp for both 230-480 Vac lines, DIPIPM(TM) Series incorporates CSTBT(TM) Carrier Stored Trench Gate Bipolar Transistor IGBT technology with on-chip current sense for short circuit protection. Models PS21A79 and PS21A7A are rated at 50 and 75 A, 600 V while PS22A72-PS22A78-E range from 5-35 A at 1,200 V. Operating from single 15 Vdc supply,...

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LDMOS RF Transistor targets TV broadcast applications.

Used in single-ended or push-pull configuration, 50 V Model MRF6V3090N is designed for TV transmitters employing analog and digital modulation formats. Unit delivers 90 W peak power at P1dB with greater than 40% efficiency through UHF broadcast frequency band. As linear driver, device achieves 21 dB power gain and drain efficiency of 12% with average output power of 4.5 W, based on DVB-T OFDM...

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Semiconductor Assemblies offer range of electronic options.

Semiconductor Assemblies offer range of electronic options.

Featuring voltages from 100-20,000 V and currents ranging from 30-3,000 A, Semiconductor Assemblies come in single, double, or 3-phase circuit configurations. Units are also available as full bridge or as series stacks and AC or static switches. Bus bars, gate firing circuits, fuses, snubbers, blowers, and fans are optional. Typical applications include power supplies, AC/DC and static...

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