Transistors

Cree Ships More Than 10 Million Watts of Commercial RF Power Transistors and High Power MMIC Amplifiers

DURHAM, N.C.- Cree, Inc. (Nasdaq: CREE) announces that, as of April 2011, the company's RF business unit has shipped commercial GaN-on-SiC RF power transistor and MMIC products with more than 10,000,000 watts of combined RF output power. This milestone demonstrates the consistency, reliability and proven performance of Cree's GaN HEMT and GaN MMIC technology. The 10 million watt figure includes...

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Radiation-Hardened Power MOSFETS suit space-grade electronics.

Rad-Hard Power MOSFETs are available in five N- and P-channel devices: models STRH100N10, STRH8N10, and STRH40P10, rated to 100 V, and STRH100N6 and STRH40N6 rated to 60 V. P-channel device (100 V) has current rating of 34A. Hermetically sealed package withstands 70/100 krad Total Ionizing Dose. Featuring low gate charge, MOSFETs can be used in DC motor controllers, linear regulators, and line...

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Electric Power Module meets needs of hybrid, electric vehicles.

Electric Power Module meets needs of hybrid, electric vehicles.

J-Series transfer molded power module (T-PM), CT300DJH060, is primarily intended for hybrid and electric vehicle applications. This 600 V/300 A power module incorporates 2 Carrier-Stored Trench Gate Bipolar Transistor (CSTBT(TM)) IGBT chips and utilizes direct lead bonding technology for optimal reliability. Built to be completely Pb free, including terminal plating, design also offers optimized...

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Automotive-Grade Power MOSFETs optimize electrical efficiency.

Available with 30 and 40 V breakdown voltages, STripFET(TM) VI DeepGATE(TM) Power MOSFETs feature current rating from 44-80 A and low on-resistance of 3.0-12.5 mW. AEC-Q101 qualified devices, housed in DPAK or D2PAK surface mount packages, include both logic- and standard-level types. Operating from -55 to 175°C, MOSFETs are suited for window winders, wipers, and heater blowers as well as engine...

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SiC Power Transistor carries 1,200 V and 45 milliohm ratings.

SiC Power Transistor carries 1,200 V and 45 milliohm ratings.

Supplied in TO-247 package, SJDP120R045 offers max on-state resistance of 0.045 W; accelerated switching with no tail current; and 175°C max operating temperature. Bare die form (SJDC120R045) is also available. Voltage-controlled, 1,200 V, normally on trench silicon carbide (SiC) power JFET has positive temperature coefficient that facilitates paralleling. Target applications include solar...

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TI Introduces Wide-Input Power Solutions with High-Voltage Protection

50-mA, 100-V LDO and 12-A, 60-V step-down controller provide fastest transient response, high efficiency to industrial systems DALLAS - Texas Instruments Incorporated (TI) (NYSE: TXN) expanded its industry-leading power management portfolio with two new step-down regulators with wide input voltages and high-voltage protection. The new 100-V LDO and 60-V DC/DC controller can withstand high-voltage...

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N-Channel MOSFET operates in temperatures up to 225°C.

N-Channel MOSFET operates in temperatures up to 225°C.

Operating over temperature range of -55 to +225°C, CHT-MOON N-channel MOSFETs exhibit gate leakage current below 100 nA at 225°C, while drain off current remains below 3.5 -µA and turn-on delay time is 30 nsec. On-resistance is 0.4 W and input capacitance is 370 pF. Available in surface-mounted, hermetically sealed ceramic SOIC16 package, which minimizes components required when they are used...

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Richardson Electronics and Powerex Offer IGBT Breakthrough...

Ultra-Low Loss NX-S Series IGBT Improves Inverter Performance LaFox, Illinois: Richardson Electronics, Ltd. (NASDAQ: RELL) and Powerex, Inc., announce off-the-shelf availability of Powerex's breakthrough 6th generation IGBT family. Richardson Electronics carries a substantial inventory of Powerex IGBT devices to support its customers in the Americas. The 6th generation technology includes...

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High-efficiency, High Power SiC JFETs Now Shipped in Commercial Quantities by SemiSouth

Includes world's first normally-off SiC JFET family up to 50kW; Targets solar inverters, power conversion, uninterruptible power supplies and high temp harsh environments SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has announced that it is now shipping...

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Bipolar Power Transistor handles continuous currents up to 6 A.

Bipolar Power Transistor handles continuous currents up to 6 A.

Manufactured using low-voltage planar technology that incorporates double-metal process for maximum cell density, Model 3STR1630 features minimum BVCEO of 30 V and equivalent on-resistance of 100 mW at hFE figure of 50. NPN transistor is housed in SOT-23 package suited for use in LED drives, motor and relay drives, and DC-DC converters.

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