Transistors

Pulsed Power Transistor targets avionics applications.
Transistors

Pulsed Power Transistor targets avionics applications.

Operating over 1030–1090 MHz bandwidth, MAGX-001090-600L00 Ceramic GaN on SiC HEMT Power Transistor provides 600 W of output power with typ 21.4 db of gain and 63% efficiency. Device has low thermal resistance of 0.05° C/W and load mismatch tolerance of 5:1. With MTTF of over 600 years and low pulse droop of 0.2 dB, RF transistor is suited for pulsed avionics applications, such as...

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Transistors

GaN on SiC RF Power Transistor delivers 750 W peak power.

Intended for air traffic control and collision avoidance equipment, MDSGN-750ELMV is based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. Solution delivers 750 W of peak power with 17 dB power gain and 70% typ drain efficiency when operating at 1,030/1,090 MHz. Transistor handles commercial Mode-S ELM (Extended Length Message) pulsing...

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GaN HEMTs target 1.2-1.4 GHz L-band radar systems.
Transistors

GaN HEMTs target 1.2-1.4 GHz L-band radar systems.

Based on 50 V, 0.4Â-µ GaN on SiC foundry process, Models CGHV14250and CGHV14500 optimize performance of band-specific applications ranging from UHF to 1,800 MHz. Model CGHV14250 features 330 W typical output power, 18 dB power gain, and 77% typical drain efficiency, while Model CGHV14500 provides 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Available in...

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Transistors

MOSFETs target RF and broadband communication applications.

Designed to operate in frequency range of 2–60 MHz, Model VRF2944 offers 400 W of output power at 50 V supply voltage, while Model VRT3933 delivers 300 W of output power at up to 100 V supply. Four VRF3933 devices with 2 in parallel, and those 2 parallel pairs in push-pull, are capable of launching 1.1 kW with 83 V supply voltage through 4:1 transformer to 50 Ω load. For reliability, nitride...

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High-Speed Photo Detectors offer ±35° angle of half sensitivity.
Photodiodes

High-Speed Photo Detectors offer ±35° angle of half sensitivity.

Offered with or without daylight blocking filters, AEC-Q101-qualified photo detectors are RoHS-compliant andÂ- halogen-free and come in miniature gullwing, reverse gullwing, and side-view packages with wide-view dome lenses. While VEMD2xx3(SL) PIN photodiodes have typ output current of 10 µA and dark current of 1 nA, VEMT2xx3(SL) phototransistors have typ output of...

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Transceivers

ON Semiconductor Announces Significant Expansion of Its Automotive Qualified Product Portfolio

AEC-Q100 and AEC-Q101 qualified discrete and standard ICs provide robust component choices for automotive designers addressing applications for growing vehicle electronic content PHOENIX, Ariz.Â- –  ON Semiconductor (Nasdaq: ONNN), driving innovation in energy efficiency, has significantly expanded its portfolio of AEC-Q100 and AEC-Q101 qualified standard components designed for...

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Rectifiers (Diodes)

Cree Licenses GaN Device Patents to Transphorm

Provides Access to Key Patents for GaN Power Device Market DURHAM, NC –Â- Cree, Inc. (Nasdaq: CREE), today announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree’s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power...

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Electronic Drivers

N-ch MOSFET targets lithium-ion battery protection circuits.

Housed in SOT-23F package measuring 2.9 x 2.4 mm, Model SSM3K324R utilizes UMOSVII-H process to minimize gate switch charge and on-state resistance, resulting in optimized power efficiency. Surface mount device featuresÂ- input capacitance of 200 pF with max RDS(on) of 109 mΩ at VGS=1.8 V and 56 mΩ at VGS = 4.5 V. MOSFET is designed for use in lithium-ion battery protection...

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Transistors

Cree SiC MOSFETs Enable New Generation of High Efficiency and High Reliability Power Supplies from Delta Elektronika BV

Expanded Portfolio of Cree® MOSFETs enables 21 Percent Reduction in Power Losses and Provides a Simpler Architecture with Half the Number of Components DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) announces that its newly expanded portfolio of 1200 V SiC MOSFETs are being incorporated into the latest advanced power supplies from Delta Elektronika BV. Delta Elektronika demonstrated a 21...

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Electronic Drivers

High and Low Side Gate Driver IC has 700 V absolute max rating.

Both high side and low side outputs ofÂ- IX2113 feature integrated power DMOS transistors, each capable of sourcing and sinking over 2 A of gate drive current. High-voltage level shift circuitry allows low-voltage logic signals to drive N-channel power MOSFETs and IGBTs in high side configuration operating up to 600 V. Manufactured on HVIC Silicon on Insulator (SOI)  process,...

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