New Transistors Products

GaN Transistor (10 W) is designed for broadband applications.

Featuring GaN technology suited for broadband designs, IGN0160UM10 operates over 100–6,000 MHz range. Under CW (continuous wave) conditions, it supplies- 10 W output power (min) at 3 GHz with >18 dB gain and 50% efficiency (typ) from- 50 V supply voltage.

GaN 1,200 W Transistor suits IFF avionics applications.

Pperating over instantaneous bandwidth of 1.03–1.09 GHz,- IGN1011L1200 high-power GaN-on-SiC transistor delivers efficiency and output power level needed by- IFF transponder designers and others. Under ELM Mode S (48 x (32-µs on, 18-µs off) 6.4%) pulsing conditions, unit supplies minimum of 1,200 W peak output power with typical >17 dB gain and 75% efficiency from- 50 V supply voltage.

GaN Transistor (300 W) is designed for CW communications.

Under continuous wave (CW) conditions, IGN0912CW300 supplies 300 W min output power with >13.5 dB gain and 70% efficiency (typ) from- 36 V supply voltage. Product operates over instantaneous bandwidth of 960–1,215 MHz.

Microsemi Showcases Leadership in Differentiated Products with Introduction of 15 New RF, Microwave and Millimeter Wave Devices at IMS 2016

New Product Exhibitions Featured in San Francisco, California May 22-27 ALISO VIEJO, Calif. - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it will feature 15 new products from its radio frequency (RF), millimeter wave integrated circuits (ICs), monolithic microwave integrated...

EMI Filters 101: Everything You Need To Know

In this eBook, we'll discuss everything you need to know about EMI filters, including their importance, regulatory requirements, and different types.

DMOS FET Arrays feature 1.5 A sink-output driver.

Respectively differing- for their- use of active high or low control logic, TBD62064A and TBD62308A series offer 4 channels of 50 V/1.5 A output. Four channels can also be paralleled to increase current driving capability. Manufactured using 130 nm BiCD process technology, products offer control inputs up to 25 V and feature 4- common cathode clamp diodes. Available packages include HSOP16,...

IGBTs suit high power switching systems.

Utilizing proprietary Ultra Field Stop trench technology, Model NGTB40N120FL3WG has Ets of 2.7 mJ, while Model NGTB25N120FL3WG has Ets of 1.7 mJ. Both devices feature VCEsat of 1.7 V at their respective rated currents. Model NGTB40N120L3WG, optimized for low conduction losses, has VCEsat of 1.55 V, at rated current, with Ets of 3 mJ. All RoHS-compliant 1,200 V products are co-packaged with fast...

GaN HEMT Die (28 V, 30 W) supports up to 8 GHz operation.

As 28 V, 30 W GaN HEMT (high electron mobility transistor) bare die, CGH80030D- exhibits 12 dB typ small signal gain at 8 GHz, 17 dB typ small signal gain at 4 GHz, and 30 W typ PSAT. Suitable applications include UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure;...

Marktech Optoelectronics to Introduce Photodetectors at Photonics West

New detector products join Marktech’s wide range of emitter sensors ranging from deep UV 280nm to 1720nm short wave infrared and InGaAs/InP epitaxial wafers from 1.0um to 2.6um. Latham, NY- – Marktech Optoelectronics is set to introduce its new line of photodetectors at the SPIE Photonics West Conference to be held in San Francisco’s Moscone Center February 7-12, 2015. Marktech’s new...

High-Voltage MOSFETs suit SMPS applications.

Built on second-generation Super Junction Technology, 500 V Series of High-Voltage MOSFETs are optimized for operation in switch mode power supplies to 500 W. Devices range from 12–20 A with low on-resistance from 190–380 mΩ and ultra-low gate charge of 22–45 nC. Designed to withstand high energy pulse in avalanche and commutation modes, RoHS-compliant devices meet stringent 80 PLUS...

N-Channel Power MOSFETs achieve low resistance.

Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.