HMC8205BF10 Power Amplifier is integrated with DC blocking capacitors.
HMC8205BF10 GaN Power Amplifier is suitable for military jammers, wireless infrastructure and radar applications. Units deliver +45.5 dBm with 35% PAE across 0.3 GHz to 6 GHz bandwidth. Amplifier feature 28 dB of small signal gain, 20 dB of power gain for Psat and gain flatness of ± 2 dB. Product is operated on 50 V of supply voltage at 1300 mA and comes in 10-lead LDCC package.
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HMC8205BF10 Power Amplifier is integrated with DC blocking capacitors.
HMC8205BF10 GaN Power Amplifier is suitable for military jammers, wireless infrastructure and radar applications. Units deliver +45.5 dBm with 35% PAE across 0.3 GHz to 6 GHz bandwidth. Amplifier feature 28 dB of small signal gain, 20 dB of power gain for Psat and gain flatness of ± 2 dB. Product is operated on 50 V of supply voltage at 1300 mA and comes in 10-lead LDCC package.
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Model 2203 High Power HF Amplifier comes with thermal overload protection.
Model 2203 High Power HF Amplifier is engineered for enabling or disrupting HF signal transmissions. Unit can be operated in multi-domain such like jammer or communications transmitter and can be operated in 1 MHz to 6 GHz frequency. Amplifier offers selectable output controls (AGC, ALC and MGC) and operating modes (CW, FM, AM, CE, DM and pulse modulation). Product features selectable Graceful...
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Model 2203 High Power HF Amplifier comes with thermal overload protection.
Model 2203 High Power HF Amplifier is engineered for enabling or disrupting HF signal transmissions. Unit can be operated in multi-domain such like jammer or communications transmitter and can be operated in 1 MHz to 6 GHz frequency. Amplifier offers selectable output controls (AGC, ALC and MGC) and operating modes (CW, FM, AM, CE, DM and pulse modulation). Product features selectable Graceful...
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How Is Expanded Metal Foil Made?
Expanded metal foil is a lightweight coil of metal that has been slit and stretched to create a uniform mesh pattern of openings.
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MAAL-011139 Amplifier provides a gain of 21.5 dB flat gain.
MAAL-011139 Low Noise Amplifier is used as input stage for fiber-to-the-home (FTTH) and 75 Ω infrastructure applications. Biased from 3 to 5 V, amplifier supports both upstream (5-204 MHz) and downstream (45-1218 MHz) CATV operation. With 1 dB and 1.5 dB of noise figure in 75 Ω CATV, 5–1218 MHz and 50 Ω system, 5-2000 MHz respectively, unit provides adjustable 20-85 mA current and return...
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MAAL-011139 Amplifier provides a gain of 21.5 dB flat gain.
MAAL-011139 Low Noise Amplifier is used as input stage for fiber-to-the-home (FTTH) and 75 Ω infrastructure applications. Biased from 3 to 5 V, amplifier supports both upstream (5-204 MHz) and downstream (45-1218 MHz) CATV operation. With 1 dB and 1.5 dB of noise figure in 75 Ω CATV, 5–1218 MHz and 50 Ω system, 5-2000 MHz respectively, unit provides adjustable 20-85 mA current and return...
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ETX115 Power Amplifier Module comes with integrated power supplies.
Used in tactical communication, test and measurement or electronic warfare systems, 2-W ETX115 Power Amplifier Module provides a small signal gain of 38.0 ± 1.5 dB and P1dB of +33 dBm at 1500 MHz. Offering an efficiency of more than 20% and 50 Ω operation, unit measures 2.6 x 1.86 x 0.75 in. and is operated on 12 V supply.
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ETX115 Power Amplifier Module comes with integrated power supplies.
Used in tactical communication, test and measurement or electronic warfare systems, 2-W ETX115 Power Amplifier Module provides a small signal gain of 38.0 ± 1.5 dB and P1dB of +33 dBm at 1500 MHz. Offering an efficiency of more than 20% and 50 Ω operation, unit measures 2.6 x 1.86 x 0.75 in. and is operated on 12 V supply.
Read More »CHA6710-99F GaN 5.5 W X-Band Medium Power Amplifier offers linear gain of 23.5 dB.
CHA6710-99F GaN 5.5 W X-Band Medium Power Amplifier is operated in a frequency range of 8 to 12.75 GHz. Unit is available as bare die and is made using 0.25µm gate length GaN HEMT process. Product offers DC bias of Vd=25 V at Idq=0.2 A and comes in chip size of 2.70 mm x 2.15 mm x 0.10 mm dimensions.
Read More »CHA6710-99F GaN 5.5 W X-Band Medium Power Amplifier offers linear gain of 23.5 dB.
CHA6710-99F GaN 5.5 W X-Band Medium Power Amplifier is operated in a frequency range of 8 to 12.75 GHz. Unit is available as bare die and is made using 0.25µm gate length GaN HEMT process. Product offers DC bias of Vd=25 V at Idq=0.2 A and comes in chip size of 2.70 mm x 2.15 mm x 0.10 mm dimensions.
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More performance and functionality for Sinumerik 828D CNC
Siemens new SINUMERIK 828D ADVANCED, SINUMERIK 828D and SINUMERIK 828D BASIC sets the standard for productivity enhancements of turning and milling operations on standardized machines and simplify the automation of grinding machines. See our video to learn all about it.
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