Op Amps target high-voltage industrial market.

Press Release Summary:

Achieving 1.1 nV/rtHz voltage noise and 80 MHz gain bandwidth with 3.6 mA supply current, Model OPA211 bipolar-input op amp provides 100 µV offset voltage and 0.2 µV/°C offset voltage drift for driving ADCs in DAQ systems. Model OPA827 JFET-input op amps's dc characteristics include 4.5 nV/rtHz voltage noise, 250 µV offset voltage, 1 µV/°C offset voltage drift, and 400 nVpp frequency noise, while AC specs include 18 MHz GBW, 22 V/µs slew rate, and 0.0004% THD at 1 kHz.

Original Press Release:

TI Delivers Precision 36-V Amplifiers with Low Power and Small Size for High-Voltage Industrial Market

Op Amps Developed Using TI's New 36-V Bipolar SiGe Process

DALLAS (Nov. 14, 2006) - Texas Instruments Incorporated (TI) (NYSE: TXN) today introduced two new precision operational amplifiers that combine ultra-low noise with lower power, smaller package size and higher bandwidth than competitive 36-V amplifiers. The OPA211 and OPA827 enable breakthrough performance for test and measurement, instrumentation, imaging, medical, audio and process control applications. These are the first devices developed using TI's groundbreaking BiCom3HV complementary bipolar 36-V silicon germanium (SiGe) process. (See www.ti.com/sc06209.)

"The OPA211 and OPA827 represent a new class of precision amplifiers and demonstrate TI's commitment to the high-voltage industrial market," said Art George, senior vice president of TI's high-performance analog business. "These new amplifiers deliver extremely high accuracy with significant improvements in power consumption, bandwidth and package size characteristics, which will enable next-generation performance in industrial applications."

The OPA211 is a bipolar-input operational amplifier that achieves 1.1 nV/rtHz voltage noise and 80 MHz gain bandwidth product (GBW) with a supply current of only 3.6 mA. The device provides 100 µV offset voltage, 0.2 µV/degC offset voltage drift and less than 1 us settling time for driving precision analog-to-digital converters in data acquisition systems. It also offers rail-to-rail output swing, which enhances dynamic range.

The OPA211 operates over a ±2.25 V to ±18 V supply range and is available in MSOP-8 or DFN-8 packages. The 3mm x 3mm DFN package requires about 1/3 the area of a standard SO-8 package. Bipolar op amps excel in limiting errors related to offset voltage and are used in applications where the source impedance is low.

The OPA827 is a JFET-input operational amplifier that combines outstanding DC precision with excellent AC performance. DC characteristics include 4.5 nV/rtHz voltage noise, 250 µV offset voltage, 1 µV/degC offset voltage drift and 400 nVpp frequency noise. AC specifications include 18 MHz GBW, 22 V/µs slew rate and 0.0004 percent total harmonic distortion (THD) at 1 kHz.

The OPA827 operates over a ±4 V to ±18 V supply range with a supply current of only 4.5 mA. The MSOP-8 package represents a 50 percent reduction compared to SO-8 packages. JFET op amps offer very low bias current and are suited for applications where source impedance is high.

TI provides customers with a state-of-the-art signal chain solution for precision applications: analog-to-digital converters such as the ADS8505 and digital-to-analog converters such as the DAC8811. The OPA211 and OPA827 are optimized to work with TI's TMS320(TM) high-performance DSP platforms and MSP430 ultra-low-power microcontroller family.

Industry's First Complementary Bipolar 36-V SiGe Process
TI's BiCom3HV process focuses TI's state-of-the-art manufacturing technology on the future needs of high-voltage industrial applications. The process offers high speeds with low noise, low power consumption and much smaller packaging than previously available. The BiCom3HV process is the first 36-V industrial process to utilize SiGe, which leads to significantly faster transistors than previously available. Excellent transistor matching along with precision SiCr resistors delivers increased accuracy, dynamic range and stability over the working temperature range.

The reduction in transistor size is made possible by using silicon-on-insulator (SOI) technology. The minimum NPN transistor is up to 11 times smaller than those available in the most advanced processes from the competition. SOI also brings other advantages such as low leakage currents and reduced interaction between transistors.

The BiCom3HV process is ideal for the next generation of industrial voltage operational amplifiers (bipolar-input and FET-input), instrumentation amplifiers, programmable gain amplifiers and precision references.

Availability and Packaging
The OPA211 is sampling now, with volume production scheduled for 2Q 2007. The device is available in DFN-8, MSOP-8 and SO-8 packages and is priced at $3.45 in 1,000-piece quantities (suggested resale pricing).

The OPA827 is sampling now, with volume production scheduled for 2Q 2007. The device is available in MSOP-8 and SO-8 packages and is priced at $5.75 in 1,000-piece quantities (suggested resale pricing).

All devices are specified for operation from -40C to +125C. For more information on TI's complete analog design support, and to download the latest Amplifier & Data Converter Selection Guide, visit www.ti.com/analog.

Texas Instruments Incorporated provides innovative DSP and analog technologies to meet our customers' real world signal processing requirements. In addition to Semiconductor, the company includes the Educational & Productivity Solutions business. TI is headquartered in Dallas, Texas, and has manufacturing, design or sales operations in more than 25 countries.

Texas Instruments is traded on the New York Stock Exchange under the symbol TXN. More information is located on the World Wide Web at www.ti.com.

Please refer all reader inquiries to:
Texas Instruments Incorporated
Semiconductor Group, SC-06209
Literature Response Center
14950 FAA Blvd.
Fort Worth, TX 76155

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