Electronic Amplifiers

Power Amplifier targets high-efficiency VSAT applications.
Electronic Amplifiers

Power Amplifier targets high-efficiency VSAT applications.

Designed for Very Small Aperture Terminal (VSAT) applications, M/A-COM MAAPSS0111 is 13.75-14.5 GHz, 4-stage, 1.25 W power amplifier that can be used as driver or output stage amplifier. It is designed to generate 31 dBm of saturated output power while drawing 530 mA of current. Housed in RoHS-compliant, 6 mm 28-lead PQFN package, unit has typical power gain of 32 dB with operating voltage of 8.0...

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Electronic Amplifiers

Audio Line Driver has power supply range of 1.8-4.5 V.

Available in 4 x 4 mm package, Model DRV601 2VRMS DirectPath(TM) integrates charge pump to allow complete audio output signal chain to run from single 3.3 V power supply. It features 2VRMS/channel output voltage into 600 W at 3.3 V, independent right and left channel shutdown control, greater than 105 dB dynamic range, short-circuit and thermal protection, and pop reduction circuitry. It is...

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Amplifier-Digitizer handles large strain gage applications.
Electronic Amplifiers

Amplifier-Digitizer handles large strain gage applications.

Designed for Series 6000 DAQ System, Model 6037 is 8-channel strain gage and transducer signal conditioning-amplifier-digitizer that automatically ranges gain according to signal level. Excitation is programmed in 1 V steps from 0-12 V, while 4-pole, low-pass filter provides bandwidths from 1 Hz to 1 kHz with programmable selection of filtered or wideband output. Unit features 16-bit Adc that...

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Electronic Amplifiers

Gooch & Housego Receives Prestigious Award from Lawrence Livermore National Laboratory

February 5th, 2008 - Gooch and Housego has been presented with a Vendor Appreciation award from the Lawrence Livermore National Laboratory (LLNL) for the supply of crystal quartz wave plates. The wave plates, supplied by Gooch & Housego Ilminster, in the UK, are key components used in the National Ignition Facility's (NIF) laser pre-amplifier modules at LLNL. The NIF will be used as part of the...

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Electronic Amplifiers

Power Amplifier suits 3G wireless handsets and equipment.

Designed to meet requirements for GSM and EDGE mode operation with WCDMA and HSPA chipsets, quad-band AWT6155 Polar EDGE Power Amplifier delivers full power output in Polar EDGE Mode with 5 x 5 mm footprint. RoHS-compliant device includes separate amplifier chains, one to support GSM850/900 bands and another for DCS/PCS bands. Internal reference voltage and integrated power control scheme...

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Electronic Amplifiers

RF Power Amplifier is engineered for 2.3-2.4 GHz band.

Supplied in RoHS-compliant 4.5 x 4.5 x 1.4 mm SMT package, AWM6422 is designed for WiMAX and WiBro applications. It supports IEEE 802.16e-2005 wireless standard as well as IEEE 802.16d-2004 and ETSI EN301-021 standards. Along with InGaP-Plus(TM) technology, solution integrates 25 dB attenuator, output power detector, and 50 W matched RF ports. It exhibits 30+ dB RF Gain and offers EVM...

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Electronic Amplifiers

Stereo Headset Amp promotes feature-phone audio quality.

Supplied in 2.1 x 2.1 x 0.6 mm flip-chip package, TS4601 offers typical power-supply rejection ratio of -107 dB that prevents handset battery noise from reaching audio output. User functions and configuration control are managed via built-in IÂ-²C interface, and sub-2 Â-µA stand-by mode promotes power conservation. Output is stable under all load conditions, allowing glitch-free operation...

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Electronic Amplifiers

Quad-Band Edge PA Modules have space-conscious design.

Designed for use in 3G wireless handsets, PDAs, and data cards, HADRON II PA Module(TM) models TQM7M5012 and TQM7M5005 are manufactured with CuFlip(TM) copper bump technology that promotes RF performance while minimizing current consumption. Products occupy 5 x 5 mm footprint and come in EDGE-Polar and EDGE-Linear versions. While TQM7M5012 suits EDGE-Polar applications, TQM7M5005 works with 2.5G...

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Electronic Amplifiers

Fujitsu Laboratories Develops World's First CMOS-Based Power Amplifier Operating at 77GHz

Tokyo, Japan, Feb 4, 2008 - Fujitsu Laboratories, Ltd. today announced the development of a millimeter-waveband power amplifier (PA) using standard 90nm CMOS process technology. Targeting millimeter-wave applications, Fujitsu Labs developed a standard CMOS modeling technology and design techniques to minimize high-frequency signal loss, thereby enabling the development of the world's first...

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Electronic Amplifiers

Nitronex Partners with Prescient Wireless to Develop Broadband 20 W Doherty Amplifier Using GaN-on-Si

20W GaN-on-Si WiMAX Doherty amplifier reference design available... ORLANDO, Fl - Radio & Wireless Symposium, Booth #29 (January 22, 2008) --Nitronex, the leading producer of GaN-on-Silicon RF power devices for the broadband and commercial wireless infrastructure markets, has partnered with Prescient Wireless to develop a broadband Doherty power amplifier for WiMAX applications. Based on...

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