Electronic Amplifiers

GaN Power Amplifiers offer high gain at up to 7.5 GHz.
Electronic Amplifiers

GaN Power Amplifiers offer high gain at up to 7.5 GHz.

Featuring high gain levels of 43–60 dB across broad frequency bands from 30 MHz to 7.5 GHz, Solid State GaN RF Amplifiers are suited for commercial and military radar, jamming systems, medical imaging, communications, and electronic warfare. Saturated output power levels range from 10–100 W with up to 35% Power Added Efficiency. All have single voltage supplies which are internally regulated....

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Electronic Amplifiers

Wideband Distributed Amplifier offers 14 dB gain, high linearity.

From 2–20 GHz, CMD238 BroadRange Distributed Amplifier™ delivers 14 dB of gain with output P1dB of +26 dBm, output IP3 of +34 dBm, andÂ- 2nd harmonic level of -33 dBc. This GaAs MMIC (monolithic microwave integrated circuit) distributed amplifier, which operates from 5–8 V power supply, is pin-compatible with CMM0014 amplifier and features 50Ã‚Â Ω matched design that...

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Wideband Driver Amplifier features 26-35 GHz frequency range.
Electronic Amplifiers

Wideband Driver Amplifier features 26-35 GHz frequency range.

Operating from single 5 V supply and drawing just 90 mA typical, Model CMD243 offers 15.5 dB of gain with output P1dB compression point of +21 dBm. Balanced design provides good VSWR matching, along with optimized stability and gain flatness. Self-biasing GaAs MMIC amplifier is a 50 Ω matched design, which eliminates need for external DC blocks and RF port matching. Applications include...

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Nasa Awards Nuwaves Engineering 2016 SBIR Phase I Contract for Development of K-Band Power Amplifier for Satellite Communications Data Links on Unmanned Aircraft Systems
Electronic Amplifiers

Nasa Awards Nuwaves Engineering 2016 SBIR Phase I Contract for Development of K-Band Power Amplifier for Satellite Communications Data Links on Unmanned Aircraft Systems

Middletown, Ohio – NuWaves Engineering, a veteran-owned small business providing advanced radio frequency (RF) and microwave solutions, today announced a Small Business Innovation Research (SBIR) Phase I contract from NASA to research and develop a high-efficiency Ku- or Ka-band RF power amplifier (PA) monolithic microwave integrated circuit (MMIC) device for over-the-horizon (OTH) command and...

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Distributed Amplifiers offer positive gain slope.
Electronic Amplifiers

Distributed Amplifiers offer positive gain slope.

From DC–22 GHz, ultra-wideband BroadRange™ CMD240 delivers over 15 dB of gain with mid-band noise figure of 2.2 dB, output 1 dB compression point of 19 dBm, and output IP3 of 28 dBm at 10 GHz with 5 V supply. Wideband BroadRange™ CMD241, operating from 2–22 GHz with low mid-band noise figure of 2.3 dB, features output IP3 of +28 dBm, low supply current of 74 mA, and 13 dB of gain with max...

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Electronic Amplifiers

Integra Completes 1kW and 200W GaN Radar Amplifiers for Aerospace Applications in P-band

San Francisco, CA (USA) –Â-  Integra Technologies, Inc. (ITI), a leading designer manufacturer of high-power RF transistors, pallets and amplifiers, announces the completion of a 1kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards. An additional 200W high efficiency GaN amplifier for shorter-term...

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Electronic Amplifiers

Microsemi Showcases Leadership in Differentiated Products with Introduction of 15 New RF, Microwave and Millimeter Wave Devices at IMS 2016

New Product Exhibitions Featured in San Francisco, California May 22-27 ALISO VIEJO, Calif. - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it will feature 15 new products from its radio frequency (RF), millimeter wave integrated circuits (ICs), monolithic microwave integrated...

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Switches and MMIC Amplifiers deliver ultra wideband operation.
Electronic Amplifiers

Switches and MMIC Amplifiers deliver ultra wideband operation.

Operating from DC to 18 GHz,Â- non-reflective GaAs switches CMD234C4 (SP3T) and CMD235C4 (SP5T) provide 40 dB isolation @ 10 GHz and respective insertion loss values of 2 and 2.5 dB. Distributed amplifiers CMD240 (DC to 22 GHz) and CMD241 (2–22 GHz) offer respective noise figures down to 2.2 and 2.3 dB and gain values of 15 and 13.5 dB. Operating from 26–35 GHz,...

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