P-Band Power Transistors deliver up to 9.6 dB power gain.

Press Release Summary:



Designed to handle medium pulse widths up to 150 µs with 5% min duty cycle, Models 0910-60M, 0910-150M, and 0910-300M cover frequency for P-Band radar applications from 890 to 1,000 MHz with output power of 60, 150, and 300 W, respectively. Class C 300 W device offers 0.5 dB droop at 150 ns rise time with load mismatch VSWR of 3:1. By integrating 4, 6, or 8 of 0910-300M transistors with 0910-150M and 0910-60M as driver and pre-driver stage, kW output power can be achieved.



Original Press Release:



Advanced Power Technology RF (APT-RF) Introduces P-Band Higher Power, High Gain, Medium Pulse Transistors



November 28, 2005

Expansion of P-Band Line Verifies Commitment To The Future of Radar Markets

Santa Clara, CA - Advanced Power Technology RF's Military & Aerospace Division (APT-RF) (Nasdaq:APTI), a leading supplier of silicon power transistors for radio frequency (RF) and microwave applications, is pleased to announce a new product family of high power transistors targeting for the P-Band Pulsed Radar Applications. These new products utilize newer chip designs and processing enhancements to offer state-of-the-art performance, notably in high power and high gain over the frequency range and the lowest droop over 150us pulse width.

The P-Band series transistors consists of three model types: 0910-60M, 0910-150M, and 0910-300M which cover the frequency for P-Band Radar Applications from 890 to 1000 MHz with a pulsed output power of 60W, 150W, and 300W respectively. These transistors are designed to handle medium pulse widths of 150us with a duty cycle of 5% minimum. The high performance class C 300W device, for example, offers unparalleled performance of 9.6 dB of power gain, 50% collector efficiency and extremely low droop, 0.5 dB or less, across the 150 us pulse width. This state-of-the-art performance is achieved with the latest APT RF's Si BJT high power technology.

0910-300M Key Features:
o Designed for P-Band Radar Application: 890 - 1000 Mhz
o Able to Handle Medium Pulse Format: 150 us, 5%
o Excellent Output Power : 300W
o Outstanding Power Gain: 9.6 dB
o Superb Droop Performance: 0.5 dB
o Rise Time: 150 ns
o Collector Efficiency: 50%
o Compression: In Compression
o Load Mismatch : VSWR 3:1
o Package: Hermetic Metal Package

By integrating 4, 6, or 8 of the 0910-300M transistors with a 0910-150M and 0910-60 as the driver and pre-driver stage; customers can comfortably achieve kilowatts output power for P-Band Radar application.

"We are extremely pleased to offer these top-notched P-band products, in addition to the existing APT RF L-Band Radar Product Family. These latest P-Band products extend the frequency coverage available to our valued Radar customers." said Jerry Chang, Director of Radar and RF Module Business. "Radar customers turn to APT-RF for our strong custom design and development capability, excellent technical and product support, and ability to deliver high volume transistors that provides the best repeatability and consistency in the industry."

With Operations in Bend, Oregon, Santa Clara, California, Montgomeryville, Pennsylvania, Boulder, Colorado and Bordeaux France, APT is a leading supplier of power semiconductors for RF, Microwave, Linear, and Switch Mode Applications. Visit our website at www.advancedpower.com.

For additional information, contact:
Advanced Power Technology
Phone: (541) 382-8028
Fax: (541) 388-0364

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