Modules

AAEON Launches NanoCOM-APL Module Featuring Onboard Support for Dual MIPI CSI Interfaces
Modules

AAEON Launches NanoCOM-APL Module Featuring Onboard Support for Dual MIPI CSI Interfaces

NanoCOM-APL Module is embedded with 6th Generation Intel® Atom™, Celeron®, or Pentium® processors. Unit can be used for hand-held, battery powered devices and enclosed IP67 applications. The module features a LPDDR4 memory with a capacity of up to 8 GB. Unit comes with a 4x PCIe expansion slot, an LVDS, DDI, or eDP connections, one 1GbE LAN connections and supports up to eight USB3.0 and two...

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AAEON Launches NanoCOM-APL Module Featuring Onboard Support for Dual MIPI CSI Interfaces
Modules

AAEON Launches NanoCOM-APL Module Featuring Onboard Support for Dual MIPI CSI Interfaces

NanoCOM-APL Module is embedded with 6th Generation Intel® Atom™, Celeron®, or Pentium® processors. Unit can be used for hand-held, battery powered devices and enclosed IP67 applications. The module features a LPDDR4 memory with a capacity of up to 8 GB. Unit comes with a 4x PCIe expansion slot, an LVDS, DDI, or eDP connections, one 1GbE LAN connections and supports up to eight USB3.0 and two...

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New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018
Transistors

New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018

Integra displays new RF power devices at International Microwave Symposium. IGNP0912L1KW, an RF power module offers high thermal stability and supplies 1000 W of peak pulse power under the conditions of 2.5ms pulse width. IGT5259L50, a 50-ohm GaN/SiC transistor features 50W at 5-6 GHz and is ideal for pulsed C-band radar applications. IGN1214L500B high power GaN/SiC HEMT transistor includes 50V...

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New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018
Transistors

New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018

Integra displays new RF power devices at International Microwave Symposium. IGNP0912L1KW, an RF power module offers high thermal stability and supplies 1000 W of peak pulse power under the conditions of 2.5ms pulse width. IGT5259L50, a 50-ohm GaN/SiC transistor features 50W at 5-6 GHz and is ideal for pulsed C-band radar applications. IGN1214L500B high power GaN/SiC HEMT transistor includes 50V...

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New C20F Series Power Entry Modules Meet Glow Wire Tests
Modules

New C20F Series Power Entry Modules Meet Glow Wire Tests

SCHURTER’s C20F Series Power Entry Modules are designed for power supplies rated up to 16 A at 250 VAC and meet UL/CSA, ENEC and cURus standards. Units are suitable for distribution units and power supplies rated up to 3500 W power ratings. The inlets are compliant to IEC 60950 (commercial), IEC 60601-1 (medical equipment) and IEC 60335-1 (Home appliance) standards. Units come with V-Lock cord...

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New C20F Series Power Entry Modules Meet Glow Wire Tests
Modules

New C20F Series Power Entry Modules Meet Glow Wire Tests

SCHURTER’s C20F Series Power Entry Modules are designed for power supplies rated up to 16 A at 250 VAC and meet UL/CSA, ENEC and cURus standards. Units are suitable for distribution units and power supplies rated up to 3500 W power ratings. The inlets are compliant to IEC 60950 (commercial), IEC 60601-1 (medical equipment) and IEC 60335-1 (Home appliance) standards. Units come with V-Lock cord...

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