Fairchild Semiconductor Corp.

3030 Orchard Pkwy.
San Jose, CA 95134

LDO Regulator can sink and source 3.1 A peak current.

Model FAN1655 features Kelvin sensing, ensuring regulation of VTT to VDDQ/2 Ã-

Low Dropout Regulator offers high ripple rejection.

With CMOS technology, Model FAN2534 150 mA LDO regulator offers fast turn-on (150 Ã-µsec) and low noise (50 Ã-µVrms). Trimmed short-circuit current limit (300 mA) protects thin PCB interconnects. For lower battery drain, FAN2534 has 180 V dropout voltage at 150 mA, and provides enable/shutdown control and thermal limiting for additional system safety. Unit comes in SOT-23, 5-lead package....

MOSFETs suit high-frequency switching applications.

PowerTrench-® 100/150 V MOSFETs come in SO-8 packages and offer low total gate charge. They are effective in conventional and high-density isolated DC/DC power supplies. Typical applications include telecom brick designs, which are optimized by using 100 V MOSFET in half- or full-bridge topologies, and 150 V MOSFET in forward topologies. Range of MOSFETs provides choice of RDS(on) vs gate charge...

Off-Line Power Switch lowers power consumption.

Model FS8S0765RC, for CRT monitor fly-back power supply applications, integrates fully avalanche-rated SenseFET (650 V min breakdown rating) with current mode PWM IC featuring primary side regulation. It includes burst mode operation for stand-by mode (under 2 W @ 265 Vac). To eliminate screen noise generated by switching action, switch turns on internal MOSFET synchronously with external sync...

Trench MOSFETs suit 12 V automotive applications.

N-Channel 60 V PowerTrench-® Models FDB035AN06A0, FDP038AN06A0, and FDD10AN06A0 provide low gate charge of 124, 124, and 37 nC, and low RDS(on) of 3.5, 3.8, and 10.5 mOhm, respectively. For inductive load switching, devices have unclamped inductive surge capability for single and repetitive pulses. Applications include high-current automotive such as motor/body load control, ABS, power-train...

Electrical Equipment & Systems

DC-DC Converter extends battery life in portable applications.

Inductorless, 100 mA FAN5660 converter achieves over 90% efficiency at full load with typical operating current of 120 Ã-µA. It inverts +l.5 V to +5.5 V input to corresponding -l.5 V to -5.5 V output. Unit can also split or double full load, +5.0V input voltage, of power supply or battery, providing +2.25 V in splitter mode and +9.5 V in doubler mode. Equipped with onboard oscillator circuit,...

Blue LEDs provide edge and back lighting.

Surface-mount Models QTLP610C-EB and QTLP611C-EB provide viewing angles of 120Ã-

Planar MOSEFETs suit SMPS and DC/DC applications.

Seven planar MOSFETs are designed specifically to meet requirements of switch-mode power supplies and DC/DC converters. Advanced Stripe Structure Technology implements both compensation area between p-wells that improves RDS(ON), and self-aligning process that increases cell density. Three 500 V devices and four 200 V devices are offered. FQP18N50V2 500 V MOSFET has TO-220 package, and FQD18N20V2...

N Channel MOSFETs feature lowest package resistance.

Family of MOSFETs are housed in Bottomless(TM) package that combines thermal performance of larger TO-263 DÃ-²-PAK with low RDS(on) in standard SO-8 package. Family includes 150V and 200V products for 48 V telecom applications; 40 V products for use in primary side of low input voltage single transistor forward dc/dc converters; and 20 V and 30 V products for low-side switch applications in...

Electronic Components & Devices

MOSFET BGAs work with battery packs.

FDZ2551N and FDZ2553N dual N-channel and FDZ2552P and FDZ2554P P-channel 20 V MOSFET ball grid arrays have physical and electrical characteristics that are suitable for Li-Ion battery pack protection applications. Each BGA is housed in 4 x 2.5 mm surface mount package, and has common drain connection and 0.8 mm mounted height. RDS(On) is 28 mohm and 14 mohm for N and P channel devices,...