Planar MOSEFETs suit SMPS and DC/DC applications.

Press Release Summary:

Seven planar MOSFETs are designed specifically to meet requirements of switch-mode power supplies and DC/DC converters. Advanced Stripe Structure Technology implements both compensation area between p-wells that improves RDS(ON), and self-aligning process that increases cell density. Three 500 V devices and four 200 V devices are offered. FQP18N50V2 500 V MOSFET has TO-220 package, and FQD18N20V2 200 V MOSFET is housed in D-PAK.

Original Press Release:

New Advanced Technology 200V/500V Planar MOSFETs for SMPS and DC/DC Applications Offer Industry's Best Figure-Of-Merit and Higher Avalanche Energy Density

Bucheon, Korea - August 20, 2002- Fairchild Semiconductor International (NYSE: FCS) introduces seven new high voltage, planar MOSFETs offering lower on-resistance, lower gate charge and higher energy density in avalanche and commutation modes. Designed specifically to meet the performance requirements of advanced switch-mode power supplies (SMPSs) and DC/DC converters, the products' advanced stripe structure technology and smaller packaging benefit power systems by providing reduced power loss, higher system efficiency and stable system quality. Fairchild's TO-220 packaged 500V FQP18N50V2, for example, has a Figure-of-Merit (FOM) over 21% lower than the leading competitor's similarly packaged product. In addition, the 200V FQD18N20V2, housed in a D-PAK, has an FOM (RDS(ON)x Qg) that is over 39% lower that of the leading competitor's comparably packaged device. This lower FOM results in optimum performance in switch mode applications. A total of seven new products are available: three 500V devices aimed at switch mode power supply (SMPS) and power factor correction (PFC) applications, and four 200V parts for DC/DC converter applications. The 200V products are also well suited for switching and pulse-width control applications. Advanced Stripe Structure Technology Fairchild's advanced technology planar MOSFET stripe structure and higher active cell density achieves lower on-state resistance, lower switching loss, and lower effective output capacitance. This new technology implements both a compensation area between the p-wells that improves RDS(ON) and a self-aligning process that increases cell density and stability. Availability: Samples and production quantities are available now, with lead times of 12 weeks or more for larger orders. For more information, contact Fairchild Semiconductor Customer Support Group at (888) 522-5372, fax (972) 910-8036, or visit Fairchild's website at www.fairchildsemi.com. Datasheets in PDF format are available at: fairchildsemi.com/pf/FO/FQD18N20V2.html www.fairchildsemi.com/pf/FQ/FQU18N20V2.html www.fairchildsemi.com/pf/FQ/FQP18N20V2.html www.fairchildsemi.com/pf/FQ/FQPFl8N20V2.html www.fairchildsemi.com/pf/FQ/FQP18N50V2.html www.fairchildsemi.com/pf/FQ/FQPF18N50V2.html www.fairchildsemi.com/pf/FQ/FQA18N50V2.html Fairchild Semiconductor International: Fairchild Semiconductor International (NYSE: FCS) is a leading global supplier of high performance products for multiple end markets. With a focus on developing leading edge power and interface solutions to enable the electronics of today and tomorrow, Fairchild's components are used in computing, communications, consumer, industrial and automotive applications. Fairchild's 10,000 employees design, manufacture and market power, analog & mixed signal, interface, logic, and optoelectronics products from its headquarters in South Portland, Maine, USA and numerous locations around the world. Please contact us on the web at www.fairchildsemi.com.