Trench MOSFETs suit 12 V automotive applications.

Press Release Summary:

N-Channel 60 V PowerTrench® Models FDB035AN06A0, FDP038AN06A0, and FDD10AN06A0 provide low gate charge of 124, 124, and 37 nC, and low RDS(on) of 3.5, 3.8, and 10.5 mOhm, respectively. For inductive load switching, devices have unclamped inductive surge capability for single and repetitive pulses. Applications include high-current automotive such as motor/body load control, ABS, power-train management, and injection systems.

Original Press Release:

New 60V Trench MOSFET Devices Provide Industry's Lowest Rds(On) and Exceptionally Low Gate Charge for 12V Automotive Applications

San Jose, Calif.-October 3, 2002-Fairchild Semiconductor (NYSE: FCS) introduces three new 60V N-Channel trench MOSFETs specifically designed for high-current automotive applications such as motor/body load control, ABS, power train management and injection systems. The FDB035AN06A0, FDP038AN06A0 and the FDD10AN06A0 are the first 60V devices from Fairchild's new line of medium-voltage (60V-150V) PowerTrench® products targeting automotive applications. (In May 2002, Fairchild announced three 75V trench MOSFETs for 42V automotive applications.) The MOSFETs in this family are successfully qualified according to the internationally accepted AEC Q101 standard and their PowerTrench technology offers the lowest RDS(on) per package type in the industry. With their very low gate charge, these medium-voltage devices are particularly well suited for high-power applications. Typically, in many of the new automotive applications several devices must be paralleled to achieve a very low overall switch resistance. But because of the low gate charge of PowerTrench MOSFETs, the required drive current -- and therefore the size of the drive circuitry -- is reduced. For example, the FDB035AN06A0 features a total gate charge of 124nC, combined with an ultra-low RDS(on) (3.5 milliohms maximum at room temperature in TO-263). For inductive load switching the device has an unclamped inductive surge (UIS) capability for single and repetitive pulses (625mJ @ 70A). The following table summarizes the key electric characteristics of all three new parts:

Part Number Breakdown RDS(on) Total Gate Charge Qg(tot) Package Voltage (RT max @Vgs=10V) (RT max) FDB035AN06A0 60V 3.5 mΩ 124nC TO-263 FDP038AN06A0 60V 3.8 mΩ 124nC TO-220 FDD10AN06A0 60V 10.5 mΩ 37nC TO-252

"The FDB035AN06A0, FDP038AN06A0, and the FDD10AN06A are only the first of many new 60V PowerTrench MOSFETs we will release in the coming months," says Greg Hendry, marketing manager for automotive MOSFETs in Fairchild's Discrete Power Business Unit. "We are currently characterizing other 60V, 100V, and 150V devices and will release them for production as soon as the characterization is complete. Samples of many of these devices are already available today." PowerTrench devices are developed and manufactured in Fairchild's 8-inch discrete power wafer fab, in Mountaintop, Pennsylvania; a manufacturing plant long recognized by industry observers for its technical leadership in power discretes for the automotive industry. Price: US$ 3.80 each (1,000 pcs.) for the FDB035AN06A0 and FDP038AN06A0 US$ 1.32 each (1,000 pcs.) for the FDD10AN06A0 Availability: September 2002 For more information, contact Fairchild Semiconductor Customer Support Group at (888) 522-5372, fax (972) 910-8036, or visit Fairchild's Web site at www.fairchildsemi.com.