IXYS Corp.
Santa Clara, CA 95054-2704
Optically Isolated AC Power Switch offers dual-power SCR outputs.
Specified with 800 V peak blocking voltage, CPC40055ST features tightly controlled zero-cross circuitry that ensures low noise switching of AC loads by minimizing generation of transients. SuperSIP package features process in which silicon chips are soft-soldered onto ceramic Direct Copper Bond (DCB) substrate. DCB ceramic provides 2,500 V(rms) isolation as well as 0.35 C/W thermal resistance....
Read More »Optically Isolated AC Power Switch offers dual-power SCR outputs.
Specified with 800 V peak blocking voltage, CPC40055ST features tightly controlled zero-cross circuitry that ensures low noise switching of AC loads by minimizing generation of transients. SuperSIP package features process in which silicon chips are soft-soldered onto ceramic Direct Copper Bond (DCB) substrate. DCB ceramic provides 2,500 V(rms) isolation as well as 0.35 C/W thermal resistance....
Read More »IXYS Integrated Circuits Division Offers New Dual IGBT Gate Driver
The IX2204 is also well suited for driving SiC MOSFETs Beverly, Massachusetts, USA – IXYS Integrated Circuits Division (ICD), (NASDAQ: IXYS), announced the availability of the IX2204 Dual IGBT Gate Driver. The IX2204 features two high current outputs, each capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs...
Read More »IXYS Integrated Circuits Division Offers New Dual IGBT Gate Driver
The IX2204 is also well suited for driving SiC MOSFETs Beverly, Massachusetts, USA –- IXYS Integrated Circuits Division (ICD), (NASDAQ: IXYS), announced the availability of the IX2204 Dual IGBT Gate Driver. The IX2204 features two high current outputs, each capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs...
Read More »Operating with 50 MHz max clock frequency, IXEP1400 Electronic Paper Display Gate Driver offers bidirectional data transfer and supports 3-level gray scaling. Data entered via shift register input controls pixels of display. Capable of driving segment or active matrix displays, IC is suited for portable battery-operated mobile devices, secondary displays for smartphones and tablets, electronic...
Read More »Operating with 50 MHz max clock frequency, IXEP1400 Electronic Paper Display Gate Driver offers bidirectional data transfer and supports 3-level gray scaling. Data entered via shift register input controls pixels of display. Capable of driving segment or active matrix displays, IC is suited for portable battery-operated mobile devices, secondary displays for smartphones and tablets, electronic...
Read More »Dual Photovoltaic MOSFET Driver replaces discrete solutions.
Featuring optically coupled technology that provides 3,750 Vrms input to output isolation, FDA217 can achieve 27 -µA short circuit current with input LED current of 30 mA. Each independent driver consists of LED optically coupled to photodiode array, and each array can generate open circuit voltage of 12.2 V and short circuit current of 9.1 µA with forward LED current of 10 mA. Driver output...
Read More »Dual Photovoltaic MOSFET Driver replaces discrete solutions.
Featuring optically coupled technology that provides 3,750 Vrms input to output isolation, FDA217 can achieve 27 Ã-µA short circuit current with input LED current of 30 mA. Each independent driver consists of LED optically coupled to photodiode array, and each array can generate open circuit voltage of 12.2 V and short circuit current of 9.1 õA with forward LED current of 10 mA. Driver...
Read More »High and Low Side Gate Driver IC has 700 V absolute max rating.
Both high side and low side outputs of- IX2113 feature integrated power DMOS transistors, each capable of sourcing and sinking over 2 A of gate drive current. High-voltage level shift circuitry allows low-voltage logic signals to drive N-channel power MOSFETs and IGBTs in high side configuration operating up to 600 V. Manufactured on HVIC Silicon on Insulator (SOI) process, IC can...
Read More »High and Low Side Gate Driver IC has 700 V absolute max rating.
Both high side and low side outputs ofÃ- IX2113 feature integrated power DMOS transistors, each capable of sourcing and sinking over 2 A of gate drive current. High-voltage level shift circuitry allows low-voltage logic signals to drive N-channel power MOSFETs and IGBTs inÃÂ high side configuration operating up to 600 V. Manufactured on HVIC Silicon on Insulator (SOI)ÃÂ process,...
Read More »Optically Isolated AC Power Switch offers dual-power SCR outputs.
Specified with 800 V peak blocking voltage, CPC40055ST features tightly controlled zero-cross circuitry that ensures low noise switching of AC loads by minimizing generation of transients. SuperSIP package features process in which silicon chips are soft-soldered onto ceramic Direct Copper Bond (DCB) substrate. DCB ceramic provides 2,500 V(rms) isolation as well as 0.35 C/W thermal resistance....
Read More »Optically Isolated AC Power Switch offers dual-power SCR outputs.
Specified with 800 V peak blocking voltage, CPC40055ST features tightly controlled zero-cross circuitry that ensures low noise switching of AC loads by minimizing generation of transients. SuperSIP package features process in which silicon chips are soft-soldered onto ceramic Direct Copper Bond (DCB) substrate. DCB ceramic provides 2,500 V(rms) isolation as well as 0.35 C/W thermal resistance....
Read More »IXYS Integrated Circuits Division Offers New Dual IGBT Gate Driver
The IX2204 is also well suited for driving SiC MOSFETs Beverly, Massachusetts, USA – IXYS Integrated Circuits Division (ICD), (NASDAQ: IXYS), announced the availability of the IX2204 Dual IGBT Gate Driver. The IX2204 features two high current outputs, each capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs...
Read More »IXYS Integrated Circuits Division Offers New Dual IGBT Gate Driver
The IX2204 is also well suited for driving SiC MOSFETs Beverly, Massachusetts, USA –- IXYS Integrated Circuits Division (ICD), (NASDAQ: IXYS), announced the availability of the IX2204 Dual IGBT Gate Driver. The IX2204 features two high current outputs, each capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs...
Read More »Operating with 50 MHz max clock frequency, IXEP1400 Electronic Paper Display Gate Driver offers bidirectional data transfer and supports 3-level gray scaling. Data entered via shift register input controls pixels of display. Capable of driving segment or active matrix displays, IC is suited for portable battery-operated mobile devices, secondary displays for smartphones and tablets, electronic...
Read More »Operating with 50 MHz max clock frequency, IXEP1400 Electronic Paper Display Gate Driver offers bidirectional data transfer and supports 3-level gray scaling. Data entered via shift register input controls pixels of display. Capable of driving segment or active matrix displays, IC is suited for portable battery-operated mobile devices, secondary displays for smartphones and tablets, electronic...
Read More »Dual Photovoltaic MOSFET Driver replaces discrete solutions.
Featuring optically coupled technology that provides 3,750 Vrms input to output isolation, FDA217 can achieve 27 -µA short circuit current with input LED current of 30 mA. Each independent driver consists of LED optically coupled to photodiode array, and each array can generate open circuit voltage of 12.2 V and short circuit current of 9.1 µA with forward LED current of 10 mA. Driver output...
Read More »Dual Photovoltaic MOSFET Driver replaces discrete solutions.
Featuring optically coupled technology that provides 3,750 Vrms input to output isolation, FDA217 can achieve 27 Ã-µA short circuit current with input LED current of 30 mA. Each independent driver consists of LED optically coupled to photodiode array, and each array can generate open circuit voltage of 12.2 V and short circuit current of 9.1 õA with forward LED current of 10 mA. Driver...
Read More »High and Low Side Gate Driver IC has 700 V absolute max rating.
Both high side and low side outputs of- IX2113 feature integrated power DMOS transistors, each capable of sourcing and sinking over 2 A of gate drive current. High-voltage level shift circuitry allows low-voltage logic signals to drive N-channel power MOSFETs and IGBTs in high side configuration operating up to 600 V. Manufactured on HVIC Silicon on Insulator (SOI) process, IC can...
Read More »High and Low Side Gate Driver IC has 700 V absolute max rating.
Both high side and low side outputs ofÃ- IX2113 feature integrated power DMOS transistors, each capable of sourcing and sinking over 2 A of gate drive current. High-voltage level shift circuitry allows low-voltage logic signals to drive N-channel power MOSFETs and IGBTs inÃÂ high side configuration operating up to 600 V. Manufactured on HVIC Silicon on Insulator (SOI)ÃÂ process,...
Read More »