IXYS Corp.
Santa Clara, CA 95054-2704
Large Discrete Power MOSFET have low Rds(on).
PLUS264 HiPerFET(TM) series extends power of through-hole leaded parts useable with PCB assembly methods. Rated for 500, 550, 600, 800, and 1,000 V, series includes Model IXBF80N50Q, rated at 80 A with Rds(on) of 55 mohms and gate charge of 290 nanocoulombs, and Model IXFB38N100Q, rated at 38 A with Rds(on) of 260 mohms and gate charge of 230 nanocoulombs. Each part is rated for 890 W at case...
Read More »MOSFET/IGBT Drivers operate from 4.5 to 25 V.
Dual 2 Ampere IXD_402 and single 9 Ampere IXD_409 MOSFET/IGBT drivers are available with inverting or non-inverting configurations. IXDF402 can also be operated in differential mode. Voltage rating of 25 V makes them suitable for driving discrete IGBTs requiring 15 V gate bias. Both devices can be driven by TTL or CMOS input signals. Package options include standard 8-pin and 16-pin SOIC, 5-pin...
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IGBT Module is available in phase-leg topology.
MII 400-12E4 Dual Pack IGBT module has ratings of 420 A Ic @ Tc = 25Ã-
Read More »MOSFETs have plastic encapsulated housing.
ISOPLUS 227 package is mechanically interchangeable with SOT-227B package. It uses direct-copper-bonded alumina substrate to reduce weight while maintaining same isolation voltage and thermal fatigue capability of latter package. Products range from IXFE180N10 176A/100V rated MOSFET to IXFE36N100 33A/1000V MOSFET, to buck and boost configured IXFE48N50QD2 and IXFE48N50QD3 units. Both of these...
Read More »MOSFETs have high voltage depletion mode.
IXTP01N100D and IXTP02N50D MOSFETS are normally on at 0V gate bias and require negative gate bias to block current. IXTP01N100D is 1000V/100mA rated MOSFET with 110 ohm RDS(on) at VGS=0V, while IXTP02N50D is rated at 500V/200mA with RDS(on) of 30 ohms. Both devices are housed in TO-220 package allowing for high power dissipation. Applications include level shifters, current regulators, normally...
Read More »MOSFETs feature electrically isolated mounting.
IXUC100N055, IXUC200N055 and IXUC160N075 Trench Power MOSEFETs possess high current ratings of 100, 200 and 160 A, respectively. IXUC100N055 and the IXUC200N055 are rated at VDS (Drain Source Voltage) equal to 55V, while IXUC160N075 has VDS rating of 75V. All are housed in hole-less packages that conform to TO-220 outline. Frame is direct-copper-bonded alumina with 2500V isolation. Maximum...
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