IXYS Corp.

Electronic Components & Devices

Low-Profile 3-Phase Rectifiers suit AC/DC power applications.

With height of 17 mm, 3-phase rectifier modules VUO162/VUO192/VUO64/VUO84 are suited for those who need to integrate front end rectification into equipment where size, weight, and efficiency are critical. Products are specifically utilized in electrical systems where AC electrical power is converted to DC power and suit applications such as motor drive, welding, and high power conversion. Bridges...

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Electronic Components & Devices

Megawatt IGBT is suited for green power applications.

Rated to 2.5 kV and 2,250 A, Part No. T2250AB25E is optimized for power density as well as reliability and efficiency. This press-pack IGBT comes in hermetic ceramic package with double side cooling that results in maximized thermal, power cycling, and power ratings. Mechanically compatible with cooling systems employed for 3,000/4,000 A GTO thyristors, product offers current rating that allows...

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Electronic Components & Devices

Insulated Water Cooler suits large power semiconductors.

Aluminium Nitride cooler, featuring 133 mm dia, is suitable for press-pack devices with electrode contacts up to 125 mm dia. Unit incorporates geometric water channel design to ensure low values of thermal resistance even at moderate coolant flows. Typical cooler to input water thermal resistance for flow rate of 10 L/min are 5.2 K/kW, with 2 coolers and 1 semiconductor, and 6.1 K/kW with 3...

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Construction Equipment and Supplies

PWM-Capable LED Driver ICs suit photo flash applications.

Supplied in 8-pin, 2 x 3 x 0.8 mm TDFN package and requiring 3 external components, LDS8640/41/80/81 are 2-channel, charge-pump based LED drivers that provide full output power from single-cell lithium ion battery or 2.7-5.5 V supply. Channels in LDS8680 can drive one HB LED each up to 800 mA and 400 mA or used concurrently to drive 2 HB LEDs at 400 mA each. Similarly, LDS8640 drives one channel...

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Controls & Controllers

Half-Bridge MOSFET Modules come in ISOPLUS i4-PAC(TM) packaging.

Providing drain to source breakdown voltages of 100, 150, and 200 V with drain current ratings from 17-54 A, FMP module combines P- and N-Channel MOSFETs configured in phase-leg or half-bridge topology with common drain arrangement. FMM module is comprised of 2 N-Channel MOSFETs and offers drain to source breakdown voltages of 200, 250, 500, and 600 V with drain current values of 12-33 A. Modules...

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Electronic Components & Devices

High-Voltage IGBT promotes power and motor control.

Offering accelerated switching and minimal conduction losses, short-circuit rated XPT is designed for parallel operation. Merging of IXYS cell design with XPT (Xtreme light Punch Through) wafer technology optimizes static and dynamic behavior as well as reliable operation during power turn-off testing. With low Vce(sat) of 1.8 V at 25°C, 1,200 V XPT IGBTs are rated at 10, 15, 35, and 50 A...

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Controls & Controllers

Power MOSFETs come in isolated 6-pack power module.

TrenchMV(TM) Power MOSFETs are integrated in isolated power module, ISOPLUS-DIL, as 3-phase bridge (6-pack configuration). GWM module series is built with ceramic isolated surface using IXYS DCB (Direct Copper Bonded) and packaging technology. This combination optimizes synergies that promote performance, thermal cycling (no thermal fatigue), and efficiency. Surface-mountable module is offered in...

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Trench Power MOSFETs have voltage ratings of 40-75 V.

TrenchT2(TM) Power MOSFETs are designed to meet power, thermal, and electrical requirements of energy/power management systems. They come with less than 5 mW on state resistances, provide low conduction and switching losses, and are rugged in unclamped inductive switching applications. Applications include battery chargers, synchronous rectification, dc/dc converters, power train management,...

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Power MOSFETs come with voltage rating of 100- 500 V.

Including Models IXTH52P10P, IXTP36P15P, IXTH26P20P, and IXTH10P50, PolarP(TM) P-Channel Power MOSFETs come in TO-247, TO-3P, TO-220, and TO-263 packages. They allow for design of complementary power output stage, with corresponding N-Channel MOSFET, for power half bridge stage with simple drive circuit. With current ratings ranging from 10-52 A, devices are suited for high side switching where...

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Electronic Components & Devices

Thyristor offers maximum voltage range of 3.5 kV.

Encapsulated in 68 mm pole face hermetic pressure contact package with industry standard 100 mm overall diameter, rectifier diode has rms current of 8,678 A. Device comes in 2 voltage grades, W4713HM300 with V(RRM) of 3,000 V and W4713HM350 with V(RRM) of 3,500 V. Diode is suited for track-side power supplies, chemical rectifiers for aluminium plants, desalination, and excitation equipment, and...

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