Advanced Power Technology
Bend, OR 97702
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Discrete IGBTs replace 200-300 V MOSFETs.
Offered in TO-220, TO-247, D2, and D3 packages, 300 V IGBTs use Power MOS 7Ã-® Technology and are designed to replace 200-300 V MOSFETs in switching applications to 200 kHz. Also suited for plasma display panel applications, products offer IC2 values of 26, 32, 60, and 83 A depending on model. Additional applications include DC-DC converters for Telecom, DC-AC inverters for alternate energy...
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Schottky Diodes feature plastic and hermetic packages.
Available in 600 and 1,200 V breakdown voltages, SiC ZERO RECOVERY(TM) Schottky Diodes come in D2, D3, TO-220, TO-247, and SOT-227, as well as hermetic TO-257, TO-254, and TO-258 packages. Configurations include single discrete, multi-die discrete, and center-tap devices. Units offer switching speed up to 500 kHz and are rated at 175Ã-
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Power Modules suit UPS applications.
Non Punch Through Power Modules come in 34 and 62 mm packages called D1, D3, and D4 and are offered in single switch, phase leg, boost, and buck configurations using 600-1,700 V NPT IGBTs. They are suited for hard switching applications. Low profile packages, E2, E3, P2 and P3 incorporate 3-phase bridge configurations with or without input rectifier bridge, brake switch, and NTC. They cover range...
Read More »High Voltage MOSFETs can be used in harsh environments.
Available in hermetic, discrete packages, POWER MOS 7Ã-® transistors utilize metal on polysilicon gate structure. Products offer low gate charge (Qg) and 0.038-3.0 ohms On-Resistance, which results in maximum current carrying capacities from 4.0-54 A. Offered with breakdown voltages from 200-1,000 V, devices are suited for DC/DC converters, Power Factor Correction (PFC) pre-regulators,...
Read More »VHF Power MOSFETs operate up to 175 Vdc.
Model ARF463 comes in common source TO-247 plastic package, and delivers 100 W of CW output power up to 100 MHz. Model ARF473 uses 2 die in Gemini ceramic-metal package for push-pull operation, and provides 300 W output up to 200 MHz. Model ARF520 has single die in standard .5 in. SOE package and delivers 150 W CW up to 150 MHz. Applications include RF Plasma generators at 13, 27 and 40 MHz, MRI...
Read More »S-Band Transistors cover applications from 2.7 to 3.4 GHz.
Series S-Band Transistors use Gold Topside metallization and Gold Wires. Model 2727-125 is rated with input power of 15.8 W to provide minimum power output of 125 W and power gain in excess of 9.0 dB.
Read More »MOSFETs produce 750 W CW output power.
ARF465A/B and ARF1505 RF power MOSFETs are for high power, RF generator and amplifier applications, below 50 MHz. Devices feature power dissipation of 250 and 1,500 W respectively and withstand operating voltages to 300 V where 1,200 V breakdown rating gives 4x safety factor required for class E or C-E operation. ARF1505 Power MOSFET produces 750 W of 27 MHz RF power with single device in 1 x 1...
Read More »Transistors have application-specific design.
Lateral diffusion metal oxide semiconductor (LDMOS) transistors model 1011LD110 performs at 110 W peak, and model 1011LD200 performs at 200 W peak. Devices are for Avionics pulsed power amplifier market and offer gold metalization and use ceramic flange mount packages. Transistors offer 13 dB and 12 dB of gain respectively over the band 1,030 to 1,090 MHz. They are for operation at 32 V and...
Read More »Schottky Diodes are built in hermetic packages.
Models APT15S20G and APT30S20C are 200 V Schottky diodes rated at 15 and 30 A, respectively. They can replace Epitaxial Diodes as output rectifiers in 48 V DC-DC converters and as free wheeling and anti-parallel diodes in low-voltage converters. Units come in TO-257 and TO-254 packages for Hi-Rel applications or harsh environments. Low forward voltage drop minimizes conduction losses, and soft...
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Power MOSFETs add to reliability of power converters.
POWER MOS 7-® FREDFETs (MOSFET with fast body diode) provide additional voltage safety margin for system reliability. Their metal gate structure provides for low gate resistance. FREDSETs with 550 V rating provides 50 to 310 milliohms on-resistance and max current rating of 20 to 80 A. Rated at 1100 V, FREDFETs offer 260 to 1200 milliohms on-resistance and have max currrent ratings from 10 to 30...
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