Press Release Summary:
Series S-Band Transistors use Gold Topside metallization and Gold Wires. Model 2727-125 is rated with input power of 15.8 W to provide minimum power output of 125 W and power gain in excess of 9.0 dB.
Original Press Release:
Advanced Power Technology RF (APT-RF) Announces Next Generation S-Band Transistors at MTT-S Symposium
Addition of S-Band verifies Commitment to the future of Radar Markets
Santa Clara, CA - Advanced Power Technology RF, a leading supplier of silicon power transistors for radio frequency (RF) and microwave applications, is announcing the first in its series of next generation of S-Band transistors. This new product utilizes newer chip designs and processing enhancements to offer performance improvements, notably in power gain and gain flatness over the frequency range. Products and data will be shown during the MTT-S Symposium in Philadelphia.
APT-RF is developing a full family of S-Band transistors and has generated a library of transistor die to cover the applications from 2.7 to 3.4 GHz at the key pulse widths and power levels. All of the transistors use Gold Topside metallization and Gold Wires. In support of the development of the final transistors we have established the capability to perform Pulsed Load Pull Analysis on the transistor structure to obtain the data which is used to establish the optimum internal matching networks. This information is then used with EM Simulation to generate the final test fixtures. The resulting transistors offer improved performance over the operating band - resulting in flatter power gain and higher overall power gain and efficiency.
The 2729-125 is rated with an input power of 15.8 Watts to provide a minimum power output of 125 Watts --- power gain in excess of 9.0 dB.... Allowing the user to reduce the requirements on the driver and predriver. A typical lineup may include the following: 2.7 - 2.9 GHz, 36 Volts, 100ms, 10%
"Customers turn to APT-RF for our application-specific designs and ability to deliver transistors that meet the design criteria of their circuits," said Mike Mallinger, Vice President of APT-RF. "Our next generation S-Band transistors give us a foundation to create a family of devices for a full range of S-Band radar applications, not only for 2.7 to 2.9 GHz but up through 3.5 GHz over the next year. These new designs, coupled with our automated assembly and test will provide customers with an assured source of supply providing the most consistent and reproducible product on the market for S-Band Radar".
Price and Availability
Small volume pricing (1-24 pieces) for 2729-125 is $359.04. Product availability is 6-12 wks, or sooner pending stock. Transistor data sheets and test circuit layout can be downloaded from the web site or obtained from the factory.
APT-RF is a leading supplier of RF and microwave silicon power transistors with offices located in Santa Clara, California and Montgomeryville, Pennsylvania. Other operations include Advanced Power Technology, Bend, Oregon, a leading supplier of high voltage, high power MOSFETs, IGBTs, Ultra-Fast Recovery and Schottky Diodes and Advanced Power Technology Europe, Bordeaux, France, a leader in standard and Applications Specific Power Modules (ASPMs®).
For more information, contact APT-RF at 3000 Oakmead Village Drive, Santa Clara, California 95051 Phone: (408) 986-8031 Fax: (408) 986-8120 Email: firstname.lastname@example.org Visit our web site at advancepower.com