Advanced Power Technology
Bend, OR 97702
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MOSFETs meet requirements of linear applications.
APL502 and APL602 are 600 V linear MOSFETs that provide high power dissipation and high forward biased safe operating area (FBSOA). They are available in TO-265, T-MAX(TM), and ISOTOPÃ-® (SOT-227) packages. Military screening and hermetic packaging options are also available. Applications include electronic loads, linear regulators, and class A amplifiers.
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IGBTs utilize metal on polysilicon gate structure.
POWER MOS 7(TM) 600 and 1200 V IGBTs are designed to replace 500/600 V and 1000/1200 V MOSFETs, respectively, in switch mode power supply, power factor correction, and other high-power applications. Units operate up to 150 kHz without current de-rating. IGBTs are available in two die sizes for 600 V and one die size for 1200 V, with and without anti-parallel diodes, in 10 die package combinations.
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MOSFETs operate fast, run cool.
Power MOS 7 FREDFETs are MOSFETs that feature intrinsic diodes optimized for fast reverse recovery time and improved commutating dv/dt capability. They have low gate charge and internal chip gate resistance for fast switching speeds and reduced switching losses. Applications include half-bridge and full-bridge converters or other circuits in which MOSFET's intrinsic diode is called on to conduct.
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