VHF Power MOSFETs operate up to 175 Vdc.

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Original Press Release:

Advanced Power Technology RF (APT-RF) Announces Super-Rugged VHF Power MOSFETs Operating Up to 175 Volts DC

Bend, OR ... Advanced Power Technology RF, a leading supplier of silicon power transistors for radio frequency (RF) and microwave applications, announces the addition of the ARF463, ARF473, and ARF520 to its family of High Voltage RF Power MOSFETs. The three new parts utilize a newly-patented process and finer geometry that deliver much higher peak power and gain than previous high voltage parts. They operate reliably at DC voltages up to 175 volts. Each of the three parts use the same die in different RF packages. The ARF463, in the common source TO-247 plastic package, delivers 100 watts of CW output power up to 100 MHz. The ARF473 uses two die in the industry standard "Gemini" ceramic-metal package for push-pull operation, and is capable of 300W output up to 200 MHz. The ARF520 has a single die in the standard .5" SOE package and can deliver 150W CW up to 150 MHz. High power RF generators are used extensively in semiconductor manufacturing, CO2 laser, and medical MRI equipment and a wide variety of HF/VHF communications equipment such as broadband linear amplifiers. To specifically address the needs of these very demanding markets, APT has developed a proprietary ultrahigh voltage wafer fabrication process for making RF power MOSFETs. This doubles the transistor's available SOA (Safe Operating Area), dramatically improves its resistance to load mismatch, provides superior thermal stability, and significantly enhances the ability to reliably operate in Class AB. The 175 volt DC maximum operating voltage simplifies output impedance matching circuitry and facilitates integrated assemblies combining DC power supply and RF power amplifier to significantly reduce the size and overall system cost. The ARF463 is available in a common source low cost plastic TO-247 package in mirror-image A and B configurations that simplify circuit layout of both parallel and push-pull operation. The rated power dissipation for the ARF463 is 180 watts. KEY FEATURES -Up to 300 Watts CW Output Power -Up to 200 MHz -175 V Operation / 500 V BVDSS -Class AB Capable -Maximized Safe Operating Area (SOA) -High Load Mismatch Tolerance -Superior Thermal Stability Applications for these devices include RF Plasma generators at 13, 27 and 40 MHz; MRI at 1.5 and 3T, and CO2 Laser RF sources up to 81 MHz, as well as broadband linear amplifiers for 1.5 to 60 MHz. Samples and volume production quantities are available starting 4 weeks ARO. APT's plastic packaged RF power devices are substantially lower in price than conventional ceramic packaged devices. At quantities of 500 pieces, the unit price for ARF463A/B is $21.53, ARF473 is $68.75, and the ARF520 is $36.25. They are available through the factory and authorized APT-RF distributors. APT- RF is a leading supplier of RF and microwave silicon power transistors with offices located in Santa Clara, California and Montgomeryville, Pennsylvania. Other operations include Advanced Power Technology, Bend, Oregon, a leading supplier of high voltage, high power MOSFETs, IGBTs, Ultra-Fast Recovery and Schottky Diodes and Advanced Power Technology Europe, Bordeaux, France, a leader in standard and Applications Specific Power Modules (ASPMs®). Preliminary data sheets are available to assist the designer, describing the features and benefits of the new MOSFETs. Data sheets and SPICE models may be downloaded from APT's website at http:www.advancedpower.com or obtained from the factory. For additional information contact 405 SW Columbia Street, Bend, Oregon 97702 Phone: 800-522-0809 or (541) 382-8028 outside of North America; Fax: (541) 388-0364 E-mail: custserv@advancedpower.com.