Transistors have application-specific design.
Share:
Press Release Summary:
Lateral diffusion metal oxide semiconductor (LDMOS) transistors model 1011LD110 performs at 110 W peak, and model 1011LD200 performs at 200 W peak. Devices are for Avionics pulsed power amplifier market and offer gold metalization and use ceramic flange mount packages. Transistors offer 13 dB and 12 dB of gain respectively over the band 1,030 to 1,090 MHz. They are for operation at 32 V and include internal pre match optimized for operating frequency band.
Original Press Release:
Advanced Power Technology RF (APT-RF) Debuts LDMOS Transistors at MTT-S Symposium
Launch Signals Commitment to the future of Avionics / Radar Markets
Santa Clara, CA - Advanced Power Technology RF, a leading supplier of silicon power transistors for radio frequency (RF) and microwave applications, is announcing its first two designs in a series of lateral diffusion metal oxide semiconductor (LDMOS) transistors developed for the AVIONICS marketplace. Designs will be shown during the MTT-S Symposium in Philadelphia.
APT-RF is introducing two LDMOS transistors: a 110-watt peak (1011LD110) and a 200-watt peak (1011LD200). Both transistors target the Avionics pulsed power amplifier market and offer gold metalization for enhanced reliability and use ceramic / flange mount packages for ease of assembly into the amplifier. The 110-watt and 200-watt transistors offer 13 dB and 12 dB of gain respectively over the band 1030 to 1090 MHz.
These devices have been specifically characterized for use in pulsed applications and are characterized to operate over the full range of applications - from IFF at short pulses to the extended length Mode- S with the 2.16 ms burst. The transistors are designed for operation at 32 Volts and include internal pre match optimized for the operating frequency band. APT-RF has utilized the design tools incorporating Load Pull Analysis and EM Simulation to insure the optimum internal prematch and external circuit design for these transistors in the applications specified.
Already a leader in high-power transistors in the pulsed bipolar market, APT-RF is adding the technology of LDMOS for those applications where pulse shaping / control are of importance. The LDMOS pulsed transistors allow the user to integrate this capability into the power amplifier and thereby provide the signal control demanded by the newer systems. These are the first in a series of LDMOS transistors that will enable OEMs of avionics equipments to meet the challenges posed by next generation systems.
"Customers turn to APT-RF for our application-specific designs and ability to deliver transistors that meet the design criteria of their circuits," said Mike Mallinger, Vice President of APT-RF. "Our first pulsed LDMOS transistors give us a foundation to create a family of devices for avionics / radar applications."
Price and Availability
Small volume pricing (1-24 pieces) for 1011LD110 is $161.92 and for 1011LD200 is $239.36. Product availability is 6-12 wks depending on the device. Transistor data sheets and test circuit layout can be downloaded from the web site or obtained from the factory.
APT- RF is a leading supplier of RF and microwave silicon power transistors with offices located in Santa Clara, California and Montgomeryville, Pennsylvania. Other operations include Advanced Power Technology, Bend, Oregon, a leading supplier of high voltage, high power MOSFETs, IGBTs, Ultra-Fast Recovery and Schottky Diodes and Advanced Power Technology Europe, Bordeaux, France, a leader in standard and Applications Specific Power Modules (ASPMs®).
For more information, contact APT-RF at 3000 Oakmead Village Drive, Santa Clara, California 95051
Phone: (408) 986-8031 Fax: (408) 986-8120 Email: csrfca@advancedpower.com
Visit our web site at: www.advancedpower.com
