National Semiconductor Corp.    Santa Clara, CA 95051-0695
Aug 01, 2011 Series LMP900xx multi-channel sensor analog front-end (AFE) ICs provide path for interfacing sensors to MCUs. Combined with WEBENCH® Sensor AFE Designer software tool and bench-top development system, series lets design engineers attach sensor, configure signal path, optimize design, and download configuration data to sensor AFE for immediate prototyping. Series features either 24- or 16-bit sigma-delta ADC with programmable input configuration.

Amphenol Industrial Operations    Sidney, NY 13838
Aug 01, 2011 Providing power from wireless, mast-mounted base station to remote radio head, Amphe-BTS features 360° EMI shielding with grounding fingers and utilizes bayonet locking mechanism for vibration/shock resistance. Receptacle has crimp contacts and plug has screw termination contacts for field installation. Circular connector, based on MIL-C-26482 series 2, features cable sealing range of 7-18 mm and is available in 2-way 48 Vdc, 2-way reverse gender 48 Vdc, and 3-way 400 Vdc/250 Vac configurations.

Pericom Semiconductor Corp.    San Jose, CA 95131
Jul 29, 2011 Offered in 16.384-155.52 MHz frequencies, Applications Specific Crystal Oscillator (ASSP XO(TM)) family includes VCXOs with phase noise, phase jitter, and pull range characteristics that cater to telecom infrastructure, broadband access, and Ethernet markets. VCXOs meet needs of systems that require typ phase noise at 1 kHz offset to be less than -120 dB, phase jitter from 12 kHz to 20 MHz offset to be less than 0.3 psec RMS typ, and pull range to exceed ±100 ppm.

Yamaichi Electronics U.S.A. Inc.    San Jose, CA 95134
Jul 29, 2011 Featuring 230 contacts, 0.5 mm pitch, and 7.8 mm installation height, 90° Model BEC-0.5-230-S9-xF-R-EDC is compatible with modules that comply with MXM/QSeven Mobile PCI Express Module standard. SMT tabs simultaneously serve to connect shielding, while contact design compensates tolerances of module fixation angle regardless of PCB thickness. Graphics standards such as PCIExpress, HDMI, and DisplayPort are supported.

Ironwood Electronics, Inc.    St. Paul, MN 55121
Jul 29, 2011 Designed to socket 27 x 27 mm, 1 mm pitch, 616-pin BGA ICs on any PCB, SG-BGA-6346 operates at bandwidths up to 8 GHz with less than 1 dB insertion loss. Socket dissipates 4.5 W with passive heat sinking and 40 W with active. Contact resistance is 20 mohms typ per pin, and mounting to target PCB is accomplished without any soldering. Socket is constructed with shoulder screw and swivel lid, which incorporates quick insertion method for accelerated ICs change-out.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Jul 29, 2011 Supplied in 3 mm, 16-lead QFN package, XZ1003-QT and XZ1004-QT fully integrated, monolithic, front end ICs (FEICs) are designed for Multi Media over Coax Alliance (MoCA) mid-band and high-band RF applications. Both are fully compatible with Entropic Communications c.Link® MoCA RF transceivers and operate from one 3.3 V supply. Integrated components include transmit amplifier, SPDT switch, power detector, digital attenuators bias, and digital control circuitry.

Texas Instruments, Inc., Semiconductors    Dallas, TX 75243
Jul 29, 2011 Supplied in 6-pin, 1 x 1.5 x 0.6 mm SON package, TPS62730 extends battery run-time in ultra low power (ULP) wireless and MSP430(TM) MCU-based applications. This 3 MHz, 100 mA synchronous step-down DC/DC converter leverages DCS-Control(TM) technology, has operating current of 25 µA, and achieves 95% conversion efficiency. Able to reduce current consumption drawn from battery in transmit and receive modes, product also integrates bypass switch that consumes 30 nA for sleep and low power modes.

Allegro MicroSystems Inc.    Worcester, MA 01615
Jul 28, 2011 As multi-output LED drivers for LCD backlighting, A8502 and A8514 integrate current-mode boost converter with internal power switch and multiple current sinks. LED sinks can be paralleled together to achieve higher LED currents. Operating from single power supply from 5-40 V, ICs can optionally drive external PMOS to disconnect input supply from system in case of fault. Both products offer diverse protection features, PWM switching frequency of greater than 2 MHz, and synchronization pin.

Melexis Inc.    Concord, NH 03301
Jul 27, 2011 With Model MLX80151, DC motor suppliers can introduce on-demand control required by emissions legislation. Motor control peripherals combined with auto-sequence ADC allow real-time control and diagnostics while minimizing interrupt load on 16-bit embedded MCU. PWM communication interface is wake-up capable and can be configured for single-wire and 2-wire applications. With double charge pump, pre-driver allows high side and low side operation of standard NFETs from 5-28 V battery voltage.

Texas Instruments, Inc. (TI)    Dallas, TX 75243-4136
Jul 27, 2011 Housed in 4 x 4 x 0.9 mm QFN package, Model DRV8662 integrates 105 V boost converter, power diode, and 50-200 V peak-to-peak fully differential amplifier. Device drives piezo actuator capacitances from 50-680 nF at 300 Hz, enabling variety of haptic effects, including feedback localized to specific area of device, and vibrations and pulses that change in frequency based on user interaction. Operating from 3.0-5.5 V supply, driver features transformer-less design and direct battery connection.

Murata Power Solutions, Inc.    Mansfield, MA 02048
Jul 26, 2011 Measuring 7.8 x 5.20 x 1.8 mm, 8300 series targets handheld consumer electronics designs where available PCB footprint and height are restricted. Toroidal core ensures magnetic flux is confined to core, almost eliminating stray fields and optimizing EMI characteristics. With device-dependent max DC current of 3.0 A, inductors are available from 0.42-100 µH. DC resistance ranges from 24 mohm to 1,320 mohm across range, and operating temperature range is -40 to +85°C.

OSRAM Opto Semiconductor    San Jose, CA 95134
Jul 26, 2011 Measuring 0.5 x 1 x 0.45 mm, ChipLED SFH 4053 IRED is suited for low-profile all-in-one computers, tablet PCs, laptop displays, and smartphones. Thin film device delivers 35 mW from operating current of 70 mA, and in pulse mode, unit can achieve as much as 260 mW from 700 mA. At wavelength of 850 nm, light from IRED is barely discernible to human eye, but is detected by receiver components.

Automation Systems Interconnect Inc.    Mechanicsburg, PA 17055
Jul 26, 2011 Measuring 6.2 mm wide and rated 30 A at 300 V with wiring capacity of 30-10 AWG, ASIUK5RETURN can be mounted almost directly up against side of panel or equipment wall or in double row configuration with backs of terminal blocks against each other. Housing is molded with UL94V0 material, and metal bodies are nickel-plated copper alloy. Available accessories include bridges to connect adjacent terminal blocks as well as standard, custom, and colored markers.

Analog Devices, Inc.    Norwood, MA 02062-9106
Jul 26, 2011 Supplied in 8-lead LFCSP or MSOP, ADA4096-2 integrates input over-voltage protection (OVP) that lets analog designers eliminate or minimize external OVP solutions. Single-chip design draws 60 µA per amplifier and remains active, even when power is not applied, to protect inputs and help ensure continuous operation of entire electronic system. Other features include 800 kHz unity gain bandwidth, 35 µV typ offset voltage, 1 µV/°C typ temperature drift, and 27 nV/vHz noise.

Kemet Electronics Corp.    Greenville, SC 29606
Jul 26, 2011 Combining self-healing, metallized polyester film capacitors with multilayer ceramic capacitors, F5D Series eliminates need for 2 devices by filtering both low and high frequency noise in automotive motors and other suppression applications. Capacitance ranges from 100 nF to 2.2 µF for film capacitor and 10 pF to 100 nF for ceramic capacitor. Operating from -55 to +125°C, non-polar RoHS-compliant devices feature DC voltage ratings of 63 V and 100 V.

ZMD    Dresden   Germany
Jul 25, 2011 Available in DFN-5 package, 40 V Model ZLED7320 features on-chip switching transistor, 1,200:1 dimming via PWM signal or fixed voltage, up to 1 A of output current at ±3% accuracy, and high-side current sensing. Device includes built-in thermal shutdown, open-circuit, and short-circuit protection. Due to output current capabilities, IC can support high-brightness and high-current LEDs from major LED manufacturers without requiring additional MOSFET to application circuit.

Exar Corp.    Fremont, CA 94538
Jul 25, 2011 Designed to help future-proof networks, Model MXP2(TM) ASSP is targeted at ROADM/DWDM and Edge Aggregation platforms in OTN transport applications. Device enables development of any service-any port line cards and consolidation of service specific muxponders into single universal design. Eight watt, 2 x 10G single chip solution includes G.709 features such as ODU0, ODUflex, and GMP, enabling services to be mapped to size appropriate OTN containers and multiplexed in single multiplexing stage.

Texas Instruments, Inc., Semiconductors    Dallas, TX 75243
Jul 22, 2011 Offered as standalone device, bq77910 offers protection and cell-balancing for 4- to 10-cell Li-Ion and lithium iron phosphate battery packs. IC monitors individual cell voltages and drives 2 N-channel power MOSFETs to interrupt current flow during fault conditions. Criteria for fault detection and recovery is fully programmable in non-volatile memory. Product simplifies battery pack designs for e-bikes, e-scooters, portable gardening tools, power tools, and UPS.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Jul 22, 2011 To reduce complexity for OEM design engineers designing 3G/4G/LTE base stations, MAAM-009320 Variable Gain Amplifier (VGA) performs 3 circuit functions in one RoHS-compliant, 4 mm, 24-Lead PQFN package. It operates from 400-2,700 MHz, and external matching components are used to set center frequency and achieve return loss performance. Analog control is accomplished via single control pin of 0 to +3 V. Other figures include 25.5 dB gain, 3.0 dB noise figure, and 26.5 dB attenuation range.

Toshiba America Electronic Components (TAEC)    Irvine, CA 92618-1811
Jul 22, 2011 Combining 1.8 V drive with 4 A drain current, Models SSM6P47NU and SSM6P49NU run at optimal efficiency, minimizing time needed for batteries to be fully charged. Available in 2.0 x 2.0 mm UDFN6 package, dual MOSFETs are suitable for charging circuits in mobile devices and are capable of acting as switch to control which loads are connected or disconnected from circuit. Applications include digital cameras, mobile phones, and game consoles.