Rectifiers (Diodes)

Rectifiers (Diodes)

Vishay Intertechnology to Exhibit Leading Passive, Diode, and Thyristor Technologies at InnoRail India 2016

MALVERN, Pa. - Nov. 29, 2016 - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for InnoRail India 2016, taking place Dec. 1-3 in Lucknow, India. In Hangar B, booth 39, Vishay will be exhibiting its latest industry-leading passive components, diodes, and thyristor modules for a wide range of applications. Passive components from Vishay at InnoRail India 2016 will...

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Rectifiers (Diodes)

Vishay Intertechnology to Exhibit Leading Passive, Diode, and Thyristor Technologies at InnoRail India 2016

MALVERN, Pa. - Nov. 29, 2016 - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for InnoRail India 2016, taking place Dec. 1-3 in Lucknow, India. In Hangar B, booth 39, Vishay will be exhibiting its latest industry-leading passive components, diodes, and thyristor modules for a wide range of applications. Passive components from Vishay at InnoRail India 2016 will...

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Up to 40 GHz Schottky Barrier Diodes with Low Junction Capacitances for Low, Medium, and High Barrier Applications
Rectifiers (Diodes)

Up to 40 GHz Schottky Barrier Diodes with Low Junction Capacitances for Low, Medium, and High Barrier Applications

Manchester, NH November 29, 2016 – SemiGen, Inc. (www.semigen.net), an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, has added a series of new Schottky Diodes to its expanding product offerings. SemiGen Silicon-based Schottky Diodes utilize various metal schemes to provide excellent performance for low, medium and high barrier applications...

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Up to 40 GHz Schottky Barrier Diodes with Low Junction Capacitances for Low, Medium, and High Barrier Applications
Rectifiers (Diodes)

Up to 40 GHz Schottky Barrier Diodes with Low Junction Capacitances for Low, Medium, and High Barrier Applications

Manchester, NH November 29, 2016 – SemiGen, Inc. (www.semigen.net), an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, has added a series of new Schottky Diodes to its expanding product offerings. SemiGen Silicon-based Schottky Diodes utilize various metal schemes to provide excellent performance for low, medium and high barrier applications...

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Reliable Ka-Band Point Contact Mixer Diodes with Low Noise Figure and VSWR Ideal For Doublers, Modulators, and Double Balanced Mixers
Rectifiers (Diodes)

Reliable Ka-Band Point Contact Mixer Diodes with Low Noise Figure and VSWR Ideal For Doublers, Modulators, and Double Balanced Mixers

Manchester, NH - November 15 , 2016 - SemiGen, Inc. ( www.semigen.net ), an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, now offers a series of Point Contact Mixer Diodes, the 1N series. The 1N series point contact mixer diodes perform into the Ka - band. Each device in the series ideally designed with noise figures as low as 5.5 dB at 3.060...

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Reliable Ka-Band Point Contact Mixer Diodes with Low Noise Figure and VSWR Ideal For Doublers, Modulators, and Double Balanced Mixers
Rectifiers (Diodes)

Reliable Ka-Band Point Contact Mixer Diodes with Low Noise Figure and VSWR Ideal For Doublers, Modulators, and Double Balanced Mixers

Manchester, NH - November 15 , 2016 - SemiGen, Inc. ( www.semigen.net ), an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, now offers a series of Point Contact Mixer Diodes, the 1N series. The 1N series point contact mixer diodes perform into the Ka - band. Each device in the series ideally designed with noise figures as low as 5.5 dB at 3.060...

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Step Recovery Diodes with low snap time.
Rectifiers (Diodes)

Step Recovery Diodes with low snap time.

Using controlled grown junction epitaxial silicon together with silicon dioxide passivation, Step Recovery Diodes provides higher stability and reliability. Used in signal generation applications like pulse generators and parametric amplifiers, SemiGen’s SRDs range from 0.2 pF to 3 pF at 6V DC. Product offers low snap time from 8 VDC to 120 VDC.

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Step Recovery Diodes with low snap time.
Rectifiers (Diodes)

Step Recovery Diodes with low snap time.

Using controlled grown junction epitaxial silicon together with silicon dioxide passivation, Step Recovery Diodes provides higher stability and reliability. Used in signal generation applications like pulse generators and parametric amplifiers, SemiGen’s SRDs range from 0.2 pF to 3 pF at 6V DC. Product offers low snap time from 8 VDC to 120 VDC.

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SLP7100 Series Limiter Diode operate in 100 MHz to 30 GHz frequency ranges.
Rectifiers (Diodes)

SLP7100 Series Limiter Diode operate in 100 MHz to 30 GHz frequency ranges.

Fabricated with high-resistivity epitaxial wafer (epi) that has thin intrinsic layers, SLP7100 limiter diodes are 2 to 20 microns thick and can be gold doped. Device boasts of low capacitance and resistance with turn-on time as low as 5ns, enabling passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges. Diodes come with maximum input power ranging from +47 dBm to +66 dBm and...

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SLP7100 Series Limiter Diode operate in 100 MHz to 30 GHz frequency ranges.
Rectifiers (Diodes)

SLP7100 Series Limiter Diode operate in 100 MHz to 30 GHz frequency ranges.

Fabricated with high-resistivity epitaxial wafer (epi) that has thin intrinsic layers, SLP7100 limiter diodes are 2 to 20 microns thick and can be gold doped. Device boasts of low capacitance and resistance with turn-on time as low as 5ns, enabling passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges. Diodes come with maximum input power ranging from +47 dBm to +66 dBm and...

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