Digital Memory

Memory Products offer RoHS compliance.

Lead-Free Memory Products include SDRAMs from 16-256 M densities, as well as SRAMs and EEPROMs from 1-128 K with I2C, Microwire, and SPI bus protocols. Devices are widely used in digital consumer applications including DVD player/recorders, DVRs, modems, set-top boxes, copiers, printers, cell phones, wireless LAN, and other computer peripherals.

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NOR Flash Memory targets 3G mobile phone market.

Using 2-bit/cell architecture, 256-Mbit Model M30L0R8000x0 provides code execution and data storage. It is produced using 0.13 micron process technology and uses compact chip-scale 8 x 10 mm TFBGA package. Intended for operation on 1.8 V power supply, unit is configured in asymmetrical block architecture, divided into 16-Mbit banks, with flexible block-locking scheme. Command set is consistent...

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Flash Memory offers high-speed access for code execution.

M58BW032 32 Mb chip is intended for automotive applications where conventional memory types cannot be used. Maintaining high-speed access over wide operating temperature range, unit suits powertrain and transmission control modules, ABS controllers, and other automotive systems. Chip reduces access time to 45 ns over automotive temperature range of -40Â-

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Memory System offers self-test and self-repair.

STAR Memory System(TM) provides on-chip testing and repairing of designs embedding megabits of memories. Embedded error-correcting-code circuitry employs Single Error Correction, Double Error Detection to detect and correct soft errors. Intelligent test algorithms detect row and column failures in smaller memories and repair them. Higher leakage currents common at 90 nm and below are addressed by...

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Serial Flash Memory provides code storage.

Offering data transfer clock speed of 50 MHz, 64-bit Model M25P64 features read throughput of 50 Mbps. Device is offered in MLP8 package measuring 6 x 8 mm, as well as S016 package, and uses ECOPACK Pb-free technology for RoHS-compliance. Specified for operating temperature of -40 to +85Â-

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EEPROM Device suits automotive applications.

Serial EEPROM devices cover densities from 1-64 K and are offered in 3 interface protocols: I2C, Microwire, and SPI. Devices are fabricated on 0.35 micron process technology at SMIC. Units suit automotive temperature range of -40 to +125Â-

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SDRAM Device provides 800 Mbps operation.

SDRAM Device provides 800 Mbps operation.

Utilizing transistors with 100 nm process technology, 1 Gb silicon DDR2 SDRAM Device features optimized layout that minimizes speed bottlenecks on signal and data paths in memory array and peripherals, allowing for 800 Mbps operation. Unit matches speed, density, and power requirements of high-end servers.

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Flash Memory comes in 8 x 10 mm BGA package.

Developed using 120 nm technology, Model NAND256 256-bit NAND Flash memory chip is organized into 2,048 nominal 16 Kbyte blocks, each of which is divided into pages of 512 bytes, plus 16 spare bytes per page. Copy Back Program mode enables data stored in one page to be programmed directly into another. Block Erase command achieves erase time of 2ms; each block is specified for 100,000 program and...

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FRAM Devices provide 1 Mbit capacity.

Models MB85R1001 and MB85R1002 feature 128 K words x8 bit and 64 K words x16 bit configurations, respectively. Units offer read access time of 100 ns and read cycle time of 250 ns. Non-volatile ferroelectric memories are suited for office equipment, portable information devices, home appliances, store security, and condition monitoring.

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FCRAM Devices suit mobile phone applications.

Mobile Fast Cycle RAM 128-bit Models MB82DBS04314C and MB82DBS08164C adopt burst mode operations complying with Common Specifications for COSMORAM Rev 3. They achieve maximum burst operation frequency of 108 MHz with single 1.8 V supply voltage, which satisfies memory requirement for mobile phone applications. Maximum standby current of 300 Â-µA can be cut by user configurable power-down...

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