Flash Memory comes in 8 x 10 mm BGA package.
Press Release Summary:
Developed using 120 nm technology, Model NAND256 256-bit NAND Flash memory chip is organized into 2,048 nominal 16 Kbyte blocks, each of which is divided into pages of 512 bytes, plus 16 spare bytes per page. Copy Back Program mode enables data stored in one page to be programmed directly into another. Block Erase command achieves erase time of 2ms; each block is specified for 100,000 program and erase cycles, and 10-year data retention.
Original Press Release:
New 256-Mbit NAND Flash Memory from STMicroelectronics Available in Smallest BGA Package
Portable high-performance digital consumer products to benefit from space-saving profile
GENEVA, Nov. 22 - STMicroelectronics (NYSE:STM) has announced volume production of the VFBGA55 version of its 256-Mbit 'Small Page' NAND Flash memory chip. Availability of the device in this tiny 8x10mm ball grid array package will allow manufacturers to use a significant amount of memory in portable equipment such as camera phones and smart phones, low cost digital cameras, PDAs and USB camera sticks, and in other products where board space is limited.
The 1mm thick package maintains ball-out compatibility with other NAND products, but will save around 20% of board space in typical applications. The NAND256 is part of ST's NAND Flash portfolio, which includes 128-Mbit, 256-Mbit, 512-Mbit and 1-Gbit devices, operating on either 1.8V or 3.0V power supplies.
It provides ultra-fast data throughput and erase capability, coupled with the low power programming and low voltage operation required by mobile phones, PDAs and other portable equipment. It has been developed using an advanced 120nm technology and the small memory cell size ensures that cost is minimized for price-sensitive products.
The memory is organized into 2048 nominal 16-Kbyte blocks, each of which is divided into pages of 512-bytes, plus 16 spare bytes per page, that can be read and programmed by page. The spare bytes are typically used for Error Correction Codes, software flags or Bad Block identification. A Copy Back Program mode enables data stored in one page to be programmed directly into another, a feature that is typically used to move data from a defective block. A Block Erase command achieves an erase time of 2ms; each block is specified for 100,000 Program and Erase cycles, and 10-year data retention.
ST's software toolchain allows fast development of products that use any of the devices in the NAND Flash family, and can help to extend their useful life. Tools include Error Correction Code (ECC) software; Bad Block Management (BBM); Wear Leveling algorithms to optimize the ageing of the device; File System OS Native reference software; and hardware simulation models.
Device options include 'Automatic Page 0 Read after Power Up', intended for applications that boot from NAND memory; and 'Chip Enable Don't Care', which simplifies the microcontroller interface and streamlines the use of NAND Flash in combination with other types of memory such as NOR Flash and SRAM. A unique device ID can be factory programmed, and a User Programmable Serial number supports increased security in the target application.
The NAND256W3A (3V) and the NAND256R3A (1.8V) are available now in the VFBGA55 8x10mm ball array package (ZA), priced at $6.50 for 100k units.
About STMicroelectronics
STMicroelectronics is a global leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivalled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence markets. The Company's shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. In 2003, the Company's net revenues were $7.24 billion and net earnings were $253 million. Further information on ST can be found at http://www.st.com/.
CONTACT: Investor Relations: Stanley March, Vice President, +1-212-821-8939, or fax, +1-212-821-8923, stan.march@st.com, or Fabrizio Rossini, Senior Manager, +41-22-929-69-73, or fax, +41-22-929-69-61, fabrizio.rossini@st.com, or Benoit de Leusse, Director, +41-22-929-58-12, or fax, +41-22-929-69-61, benoit.de-leusse@st.com, or Media Relations: Maria Grazia Prestini, Director, Corporate Media Relations, +41-2-29-29-69-45, or fax, +41-2-29-29-69-50, mariagrazia.prestini@st.com, or Michael Markowitz, Director, U.S. Media Relations, +1-212-821-8959, or fax, +1-212-821-8922, michael.markowitz@st.com, all of STMicroelectronics
