FRAM Devices provide 1 Mbit capacity.
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Press Release Summary:
Models MB85R1001 and MB85R1002 feature 128 K words x8 bit and 64 K words x16 bit configurations, respectively. Units offer read access time of 100 ns and read cycle time of 250 ns. Non-volatile ferroelectric memories are suited for office equipment, portable information devices, home appliances, store security, and condition monitoring.
Original Press Release:
Fujitsu Launches High-Capacity Next Generation Non-volatile Memory
MUNICH, November 9 - Mass Production Commences of World First 1MBit Class FRAM
Fujitsu Microelectronics Europe launches its 1MBit FRAM, the highest ever capacity for FRAM non-volatile memory, also featuring high speed read and write operations, low power consumption, and high endurance.
There is a growing demand for non-volatile memory with high-speed operation, low power consumption, and high endurance in Office Application equipment (e.g. printers, copier machines), portable information devices, and home appliances (e.g. microwaves, washing machines), for store security information and condition monitoring. Ferroelectric memory (FRAM) fulfils these requirements.
Fujitsu first marketed embedded LSI FRAM in 1999 and, in addition, also produced 256 Kbit application specific standalone memory for the non-volatile memory market. The company has to date already sold more than 150 million FRAM products.
With the latest 0.35um1T1C cell technology, Fujitsu was able to develop two 1Mbit FRAM devices - "MB85R1001"(x8 bits) and "MB85R1002"(x16 bits), the highest capacity of any of its FRAM products.
The company offers next generation memory solutions with its expanding FRAM product line-up, where the load on production, maintenance and the environment is drastically lightened and development costs are also reduced by using RAM/ROM replaceable FRAM.
Fujitsu has been a world leader in FRAM development and mass production, and will be the first company to mass produce mega bit class FRAM. With the combined features of both RAM and ROM, compared to EEPROM the speed of writing is more than 10,000 times faster, power consumption in write operation is tens of times smaller, and also rewriting endurance is more than 100,000 times higher.
Fujitsu has also introduced 1T1C cell technology that can realise twice as much capacity than its traditional 2T2C cell technology. This high capacity has been achieved without increasing the die size.
Major Specifications of 1MBit FRAM devices
MB85R1001 MB85R1002
Bit Configuration 128K wordsx8 bits 64K wordsx16 bits
Operating Power Supply Voltage between +3.0V and +3.6V
Operating Temperature Range between -20 degrees C and +85 degrees C
Read Access Time 100ns
Read Cycle Time 250ns
Write Cycle Time
Data Retention More than 10 years
Endurance More than 10 Billion times
Package TSOP48, TSOP48,
TSOP32 (Plan) FBGA48
Embedded function - /LB,/UB switching
Power-on protect system
Trademarks
FRAM is a registered trademark of Ramtron International Corporation. All other company/product names mentioned may be trademarks or registered trademarks of their respective holders.
Further information on Fujitsu Microelectronics Europe's products is available on our WWW address at: www.fme.fujitsu.com
A medium resolution picture relevant to this press release can be found by following the link: ftp://ftp.jdk.co.uk/Fujitsu/Press/MRPR817.jpg
Fujitsu Microelectronics Europe: Jim Bryant, Tel: +49-6103-690-0, Fax: +49-6103-690-122, E-mail: jim.bryant@fme.fujitsu.com. JDK Marketing Communications: Joanna Muggeridge, Tel: +44-870-787-9510, Fax: +44-870-787-9509, E-mail: joanna@jdk.co.uk
